Low power operation of electronic apparatus has becomeincreasingly desirable. Medical, remote data acquisition,power monitoring and other applications are good candidatesfor battery driven, low power operation. Micropoweranalog circuits for transducer-based signal conditioningpresent a special class of problems. Although micropowerICs are available, the interconnection of these devices toform a functioning micropower circuit requires care. (SeeBox Sections, “Some Guidelines for Micropower Designand an Example” and “Parasitic Effects of Test Equipmenton Micropower Circuits.”) In particular, trade-offs betweensignal levels and power dissipation become painful whenperformance in the 10-bit to 12-bit area is desirable.
上传时间： 2013-10-22
上传用户：rocketrevenge
Application considerations and circuits for the LT1001 and LT1002 single and dual precision amplifiers are illustrated in a number of circuits, including strain gauge signal conditioners, linearized platinum RTD circuits, an ultra precision dead zone circuit for motor servos and other examples.
上传时间： 2013-10-18
上传用户：dreamboy36
Sensors for pressure, load, temperature, acceleration andmany other physical quantities often take the form of aWheatstone bridge. These sensors can be extremely linearand stable over time and temperature. However, mostthings in nature are only linear if you don’t bend them toomuch. In the case of a load cell, Hooke’s law states that thestrain in a material is proportional to the applied stress—as long as the stress is nowhere near the material’s yieldpoint (the “point of no return” where the material ispermanently deformed).
上传时间： 2013-11-13
上传用户：墙角有棵树
Portable, battery-powered operation of electronic apparatushas become increasingly desirable. Medical, remotedata acquisition, power monitoring and other applicationsare good candidates for battery operation. In some circumstances,due to space, power or reliability considerations,it is preferable to operate the circuitry from a single 1.5Vcell. Unfortunately, a 1.5V supply eliminates almost alllinear ICs as design candidates. In fact, the LM10 opamp-reference and the LT®1017/LT1018 comparators arethe only IC gain blocks fully specifi ed for 1.5V operation.Further complications are presented by the 600mV dropof silicon transistors and diodes. This limitation consumesa substantial portion of available supply range, makingcircuit design diffi cult. Additionally, any circuit designedfor 1.5V operation must function at end-of-life batteryvoltage, typically 1.3V. (See Box Section, “Componentsfor 1.5V Operation.”)
标签： Circuitry Operation Single 1017
上传时间： 2013-12-20
上传用户：Wwill
The LM20, LM45, LM50, LM60, LM61, and LM62 are analog output temperature sensors. They have various output voltage slopes (6.25mV/°C to 17mV/°C) and power supply voltage ranges (2.4V to 10V).The LM20 is the smallest, lowest power consumption analog output temperature sensor National Semiconductor has released. The LM70 and LM74 are MICROWIRE/SPI compatible digital temperature sensors. The LM70 has a resolution of 0.125°C while the LM74 has a resolution of 0.625°C. The LM74 is the most accurate of the two with an accuracy better than ±1.25°C. The LM75 is National’s first digital output temperature sensor, released several years ago.
上传时间： 2014-12-23
上传用户：yl8908
Differential Nonlinearity: Ideally, any two adjacent digitalcodes correspond to output analog voltages that are exactlyone LSB apart. Differential non-linearity is a measure of theworst case deviation from the ideal 1 LSB step. For example,a DAC with a 1.5 LSB output change for a 1 LSB digital codechange exhibits 1⁄2 LSB differential non-linearity. Differentialnon-linearity may be expressed in fractional bits or as a percentageof full scale. A differential non-linearity greater than1 LSB will lead to a non-monotonic transfer function in aDAC.Gain Error (Full Scale Error): The difference between theoutput voltage (or current) with full scale input code and theideal voltage (or current) that should exist with a full scale inputcode.Gain Temperature Coefficient (Full Scale TemperatureCoefficient): Change in gain error divided by change in temperature.Usually expressed in parts per million per degreeCelsius (ppm/°C).Integral Nonlinearity (Linearity Error): Worst case deviationfrom the line between the endpoints (zero and full scale).Can be expressed as a percentage of full scale or in fractionof an LSB.LSB (Lease-Significant Bit): In a binary coded system thisis the bit that carries the smallest value or weight. Its value isthe full scale voltage (or current) divided by 2n, where n is theresolution of the converter.Monotonicity: A monotonic function has a slope whose signdoes not change. A monotonic DAC has an output thatchanges in the same direction (or remains constant) for eachincrease in the input code. the converse is true for decreasing codes.
标签： Converters Defini DAC
上传时间： 2013-10-30
上传用户：stvnash
ANALOG INPUT BANDWIDTH is a measure of the frequencyat which the reconstructed output fundamental drops3 dB below its low frequency value for a full scale input. Thetest is performed with fIN equal to 100 kHz plus integer multiplesof fCLK. The input frequency at which the output is −3dB relative to the low frequency input signal is the full powerbandwidth.APERTURE JITTER is the variation in aperture delay fromsample to sample. Aperture jitter shows up as input noise.APERTURE DELAY See Sampling Delay.BOTTOM OFFSET is the difference between the input voltagethat just causes the output code to transition to the firstcode and the negative reference voltage. Bottom Offset isdefined as EOB = VZT–VRB, where VZT is the first code transitioninput voltage and VRB is the lower reference voltage.Note that this is different from the normal Zero Scale Error.CONVERSION LATENCY See PIPELINE DELAY.CONVERSION TIME is the time required for a completemeasurement by an analog-to-digital converter. Since theConversion Time does not include acquisition time, multiplexerset up time, or other elements of a complete conversioncycle, the conversion time may be less than theThroughput Time.DC COMMON-MODE ERROR is a specification which appliesto ADCs with differential inputs. It is the change in theoutput code that occurs when the analog voltages on the twoinputs are changed by an equal amount. It is usually expressed in LSBs.
上传时间： 2013-11-12
上传用户：pans0ul
分析了调幅信号和载波信号之间的相位差与调制信号的极性的对应关系,得出了相敏检波电路输出电压的极性与调制信号的极性有对应关系的结论。为了验证相敏检波电路的这一特性,给出3 个电路方案,分别选用理想元件和实际元件,采用Multisim 对其进行仿真实验,直观形象地演示了相敏检波电路的鉴相特性,是传统的实际操作实验所不可比拟的。关键词:相敏检波;鉴相特性;Multisim;电路仿真 Abstract : The corresponding relation between modulation signal polarity and difference phases of amplitudemodulated signal and the carrier signal ,the polarity of phase2sensitive detecting circuit output voltage and the polarity of modulation signal are correspondent . In order to verify this characteristic ,three elect ric circuit s plans are produced ,idea element s and actual element s are selected respectively. Using Multisim to carry on a simulation experiment ,and then demonst rating the phase detecting characteristic of the phase sensitive circuit vividly and directly. Which is t raditional practical experience cannot be com pared.Keywords :phase sensitive detection ;phase2detecting characteristic ;Multisim;circuit simulation
上传时间： 2013-11-23
上传用户：guanhuihong
This reference design (RD) features a fullyassembled and tested surface-mount printed circuitboard (PCB). The RD board utilizes the MAX48851:2 or 2:1 multiplexer and other ICs to implement acomplete video graphics array (VGA) 8:1multiplexer.VGA input/output connections are provided to easilyinterface the MAX4885 RD board with VGAcompatibledevices. The RD board gives the optionto use a single 5V DC power supply (V+), or this RDboard can be powered from any one of the eight VGA sources.
标签： multiplexer reference VGA
上传时间： 2013-11-09
上传用户：ANRAN
Construction Strategy of ESD Protection CircuitAbstract： The principles used to construct ESD protection on circuits and the basic conceptions of ESD protection design are presented.Key words：ESD protection/On circuit, ESD design window, ESD current path1 引言静电放电（ESD，Electrostatic Discharge）给电子器件环境会带来破坏性的后果。它是造成集成电路失效的主要原因之一。随着集成电路工艺不断发展，互补金属氧化物半导体（CMOS，Complementary Metal-Oxide Semiconductor）的特征尺寸不断缩小，金属氧化物半导体(MOS, Metal-Oxide Semiconductor)的栅氧厚度越来越薄，MOS 管能承受的电流和电压也越来越小，因此要进一步优化电路的抗ESD 性能，需要从全芯片ESD 保护结构的设计来进行考虑。
标签： Construction Strategy ESD of
上传时间： 2013-11-09
上传用户：Aidane
