This paper reviews key factors to practical ESD protection design for RF and analog/mixed-signal (AMS) ICs, including general challenges emerging, ESD-RFIC interactions, RF ESD design optimization and prediction, RF ESD design characterization, ESD-RFIC co-design technique, etc. Practical design examples are discussed. It means to provide a systematic and practical design flow for whole-chip ESD protection design optimization and prediction for RF/AMS ICs to ensure 1 st Si design success.
标签： ESD_protection_for_RF_and_AMS_ICs
上传时间： 2020-06-05
上传用户：shancjb
Micro-Electro-Mechanical Systems (MEMS) are miniature systems composed ofintegratedelectricalandmechanicalpartstosenseand/orcontrolthingsonaµmscale. The concept of MEMS is attributed to Richard Feynman’s famous talk on December 29th, 1959 [2,3]. Dr. Feynman foresaw many aspects of future MEMS development with his insight in microphysics. In particular, material properties in the µm scale are differentfrombulkpropertiesandthescalingdownofintegratedcircuits(IC)fabrication technology has been a major driving force of MEMS development.
标签： Performance High MEMS RF
上传时间： 2020-06-06
上传用户：shancjb
Over many years, RF-MEMS have been a hot topic in research at the technology and device level. In particular, various kinds of mechanical Si-MEMS resonators and piezoelectric BAW (bulk acoustic wave) resonators have been developed. The BAW technology has made its way to commercial products for passive RF filters, in particular for duplexers in RF transceiver front ends for cellular communica- tions. Beyond their use in filters, micromachined resonators can also be used in conjunction with active devices in innovative circuits and architectures.
标签： MEMS-based Circuits Systems and
上传时间： 2020-06-06
上传用户：shancjb
GaN is an already well implanted semiconductor technology, widely diffused in the LED optoelectronics industry. For about 10 years, GaN devices have also been developed for RF wireless applications where they can replace Silicon transistors in some selected systems. That incursion in the RF field has open the door to the power switching capability in the lower frequency range and thus to the power electronic applications. Compared to Silicon, GaN exhibits largely better figures for most of the key specifications: Electric field, energy gap, electron mobility and melting point. Intrinsically, GaN could offer better performance than Silicon in terms of: breakdown voltage, switching frequency and Overall systems efficiency.
标签： GaN-on-Si Displace and SiC Si
上传时间： 2020-06-07
上传用户：shancjb
To a quantum mechanic the whole universe is one godawful big interacting wavefunction ? but to the rest of us, it’s a world full of separate and distinguishable objects that hurt us when we kick them. At a few months of age, human children recognize objects, expect them to be permanent and move continuously, and display surprise when they aren’t or don’t. We associate visual, tactile, and in some cases audible and olfactory sensations with identifiable physical things. We’re hardwired to understand our environment as being composed of separable things with specific properties and locations. We understand the world in terms of what was where when.
上传时间： 2020-06-08
上传用户：shancjb
This manuscript is a partial draft of a book to be published in early 1994 by AddisonWesley (ISBN 0-201-63337-X). Addison-Wesley has given me permission to make drafts of the book available to the Tcl community to help meet the need for introductory documentation on Tcl and Tk until the book becomes available. Please observe the restrictions set forth in the copyright notice above: you’re welcome to make a copy for yourself or a friend but any sort of large-scale reproduction or reproduction for profit requires advance permission from Addison-Wesley
标签： Toolkit
上传时间： 2020-07-05
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使用片式磁珠和片式电感的原因：是使用片式磁珠还是片式电感主;要还在于应用。在谐振电路中需要使用片式电感。而需要消除不需要的EMI噪声时，使用片式磁珠是最佳的选择。 磁珠是用来吸收超高频信号，象-一些RF电路，PLL，振荡电路，含超高频存储器电路（DDRSDRAM，RAMBUS等）都需要在电源输入部分加磁珠。而电感是一种蓄能元件，用在LC振荡电路，中低频的滤波电路等，其应用频率范围很少超过错50MHZ。 磁珠专用于抑制信号线、电源线上的高频噪声和尖峰干扰，还具有吸收静电脉冲的能力。磁珠的功能主要是消除存在于传输线结构（PCB电路）中的RF噪声，RF能量是叠加在直流传输电平上的交流正弦波成分，直流成分是需要的有用信号，而射频RF能量却是无用的电磁干扰沿着线路传输和辐射（EMI）。要消除这些不需要的信号能量，使用片式磁珠扮演高频电阻的角色（衰减器），该器件允许直流信号通过，而滤除交流信号。通常高频信号为30MHz以上，然而，低频信号也会受到片式磁珠的影响
标签： pcb
上传时间： 2021-11-06
上传用户：xsr1983
CHAPTER 1: THE OP AMP CHAPTER 2: OTHER LINEAR CIRCUITS CHAPTER 3: SENSORS CHAPTER 4: RF/IF CIRCUITS CHAPTER 5: FUNDAMENTALS OF SAMPLED DATA SYSTEMS CHAPTER 6: CONVERTERS CHAPTER 7: DATA CONVERTER SUPPORT CIRCUITS CHAPTER 8: ANALOG FILTERS CHAPTER 9: POWER MANAGEMENT CHAPTER 10: PASSIVE COMPONENTS CHAPTER 11: OVERVOLTAGE EFFECTS ON ANALOG INTEGRATED CIRCUITS CHAPTER 12: PRINTED CIRCUIT BOARD (PCB) DESIGN ISSUES CHAPTER 13: DESIGN DEVELOPMENT TOOLS
上传时间： 2021-12-21
上传用户：wangshoupeng199
高通(Qualcomm)蓝牙芯片QCC5151_硬件设计详细指导书（官方内部培训手册）共52页其内容是针对硬件设计、部分重要元器件选择(ESD，Filter）及走线注意事项的详细说明。2 Power management 2.1 SMPS 2.1.1 Components specification 2.1.2 Input power supply selection 2.1.3 Minimize SMPS EMI emissions 2.1.4 Internal LDOs and digital core decoupling 2.1.5 Powering external components 2.2 Charger 2.2.1 Charger connections.2.2.2 General charger operation2.2.3 Temperature measurement during charging 2.3 SYS_CTRL 3 Bluetooth radio3.1 RF PSU component choice 3.2 RF band-pass filter3.3 Layout (天线 走线的注意事项)4 Audio4.1 Audio bypass capacitors 4.2 Earphone speaker output4.3 Line/Mic input 4.4 Headphone output optimizition5 LED pads 5.1 LED driver 5.2 Digital/Button input 5.3 Analog input5.4 Disabled 6 Reset pin (Reset#)7 QSPIinterface 8 USB interfaces 8.1 USB device port8.1.1 USB connections8.1.2 Layout notes8.1.3 USB charger detection
上传时间： 2022-01-24
上传用户：XuVshu
LT3095MPUDD双通道低噪声偏置发生器的典型应用电路凌力尔特公司 (Linear Technology Corporation) 推出双通道 IC LT3095，该器件从单一输入提供两路非常低噪声、低纹波的偏置电源。每个通道都纳入了单片升压型 DC/DC 转换器，一个集成的超低噪声和高 PSRR (电源抑制比) 线性稳压器对该转换器进行了后置稳压。LT3095 在输出电压高达 20V 时提供高达 50mA 的连续输出电流，总纹波和噪声 <100µVP-P。该器件在 3V 至 20V 输入电压范围内工作，从而可与多种电源兼容。 LT3095 的固定频率、峰值电流模式升压型 DC/DC 转换器包括一个集成的 950mA 电源开关、肖特基二极管和内部频率补偿。开关频率在 450kHz 至 2MHz 内可通过单个电阻器编程，或可同步至一个外部时钟，因此允许使用纤巧的外部组件。结合紧凑的 3mm x 5mm QFN 封装，LT3095 可提供简单、占板面积紧凑、高效率的解决方案，适用于仪表放大器、RF 和数据转换系统、以及其他低噪声偏置应用。 LT3095 的线性稳压器运用凌力尔特专有的电流源基准架构，从而提供了很多优势，例如能够用单个电阻器设定输出电压，带宽、噪声、PSRR 和负载调节性能基本上不受输出电压影响。集成输出噪声 (在 10Hz 至 100kHz 带宽) 仅为 4µVRMS，而且在整个开关频率范围内 PSRR 超过70dB，从而使总的噪声和纹波 <100µVP-P。线性稳压器调节升压型转换器的输出电压，使其比线性稳压器输出电压高 2V，从而优化了功耗、瞬态响应和 PSRR 性能。为了提高系统可靠性，LT3095 提供短路和热保护，还为每个通道提供独立和精确的使能 / UVLO 门限。微功率工作时，两个 EN 引脚均被拉低。
标签： 噪声偏置发生器
上传时间： 2022-02-15
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