An optical fiber amplifier is a key component for enabling efficient transmission of wavelength-divisionmultiplexed(WDM)signalsoverlongdistances.Eventhough many alternative technologies were available, erbium-doped fiber amplifiers won theraceduringtheearly1990sandbecameastandardcomponentforlong-haulopti- caltelecommunicationssystems.However,owingtotherecentsuccessinproducing low-cost, high-power, semiconductor lasers operating near 1450 nm, the Raman amplifiertechnologyhasalsogainedprominenceinthedeploymentofmodernlight- wavesystems.Moreover,becauseofthepushforintegratedoptoelectroniccircuits, semiconductor optical amplifiers, rare-earth-doped planar waveguide amplifiers, and SILICON optical amplifiers are also gaining much interest these days.
标签： Propagation Light Media Gain in
上传时间： 2020-05-27
上传用户：shancjb
Ultra-wideband (UWB) technology enables high data-rate short-range communica- tion, in excess of hundredmegabit-per-secondsand up to multi-gigabit-per-seconds, over a wide spectrum of frequencies, while keeping power consumption at low lev- els. This low power operation results in a less-interfering co-existence with other existed communication technologies (e.g., UNII bands). In addition to carrying a huge amount of data over a distance of up to 230 feet at very low power (less than 0.5mW), the UWB signal has the ability to penetrate through the doors and other obstacles that tend to reflect signals at more limited bandwidths and higher power densities.
标签： SILICON-Based Front-Ends RF
上传时间： 2020-05-31
上传用户：shancjb
In the seven years since the first edition of this book was completed, Electrostatic Discharge (ESD) phenomena in integrated circuits (IC) continues to be important as technologies shrink and the speed and size of the chips increases. The phenom- ena related to ESD events in semiconductor devices take place outside the realm of normal device operation. Hence, the physics governing this behavior are not typ- ically found in general textbooks on semiconductors.
标签： Integrated Circuits SILICON ESD In
上传时间： 2020-06-05
上传用户：shancjb
Microengineering and Microelectromechanical systems (MEMS) have very few watertight definitions regarding their subjects and technologies. Microengineering can be described as the techniques, technologies, and practices involved in the realization of structures and devices with dimensions on the order of micrometers. MEMS often refer to mechanical devices with dimensions on the order of micrometers fabricated using techniques originating in the integrated circuit (IC) industry, with emphasis on SILICON-based structures and integrated microelectronic circuitry. However, the term is now used to refer to a much wider range of microengineered devices and technologies.
标签： Microengineering Interfacing MEMS and
上传时间： 2020-06-06
上传用户：shancjb
GaN is an already well implanted semiconductor technology, widely diffused in the LED optoelectronics industry. For about 10 years, GaN devices have also been developed for RF wireless applications where they can replace SILICON transistors in some selected systems. That incursion in the RF field has open the door to the power switching capability in the lower frequency range and thus to the power electronic applications. Compared to SILICON, GaN exhibits largely better figures for most of the key specifications: Electric field, energy gap, electron mobility and melting point. Intrinsically, GaN could offer better performance than SILICON in terms of: breakdown voltage, switching frequency and Overall systems efficiency.
标签： GaN-on-Si Displace and SiC Si
上传时间： 2020-06-06
上传用户：shancjb
There have been many developments in the field of power electronics since the publication of the second edition, almost five years ago. Devices have become bigger and better - bigger SILICON die, and current and voltage ratings. However, semiconductor devices have also become smaller and better, integrated circuit devices, that is. And the marriage of low power integrated circuit tecnology and high power semiconductors has resulted in benefit to both fields.
标签： Electronics Handbook Edition Power
上传时间： 2020-06-07
上传用户：shancjb
硅光设计书籍，包括微环谐振器，MZI，布拉格光栅，包括原理，仿真和优化过程的详细说明。
标签： 硅光设计
上传时间： 2022-01-01
上传用户：lostxc
The PW2202 is SILICON N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planarTechnology which reduce the conduction loss, improve switching performance and enhance theavalanche energy. The transistor can be used in various power switching circuit for system
标签： pw2202
上传时间： 2022-02-11
上传用户：默默
静电放电（Electrostatic Discharge，ESD）是构成集成电路可靠性的主要因素之一，存在于生产到使用的每一个环节，并成为开发新一代工艺技术的难点之一，近年来，对ESD的研究也因而越来越受到重视，仿真工具在ESD领域的应用使得ESD防护的研究变得更为便利，可大幅缩短研发周期然而，由于ESD现象复杂的物理机制，极端的电场及温度条件，以及ESD仿真中频繁的不收敛现象，都使得FSD的仿真变得极为困难本文详细阐述了ESD的来源、造成的危害以及如何测试集成电路的防静电冲击能力，并基于 Sentaurus软件，对ESD防护器件展开了的分析、研究，内容包括1）掌握ESD保护的基本理论、测试方法和防护机理2）研究了工艺仿真流程的步骤以及网格定义在工艺仿真中的重要性，并对网格定义的方法进行了探讨3）硏究了器件仿真流程以及器件仿真中的物理模型和模型函数，并对描述同一物理机制的的各种不同模型展开对比分析.主要包括传输方程模型、能帶模型、各种迁移率退化模型、雪崩离化模型和复合模型4）研究了双极型晶体管和可控硅（SILICON Controlled rectifier，SCR）防护器件的仿真，并通过对仿真结果的分析，研究了ESD保护器件在ESD应力作用下的工作机理关键词：静电放电；网格；器件仿真；双极型晶体管；可控硅
上传时间： 2022-03-29
上传用户：ddk
Altera(Intel)_MAX10_10M02SCU169开发板资料硬件参考设计+逻辑例程.QM_MAX10_10M02SCU169开发板主要特征参数如下所示： 主控CPLD：10M02SCU169C8G； 主控CPLD外部时钟源频率：50MHz； 10M02SCU169C8G芯片内部自带丰富的Block RAM资源； 10M02SCU169C8G芯片逻辑单元数为2K LE； QM_MAX10_10M02SCU169开发板板载SILICON Labs的CP2102芯片来实现USB转串口功能； QM_MAX10_10M02SCU169开发板板载MP2359高效率DC/DC提供CPLD芯片工作的3.3V电源； QM_MAX10_10M02SCU169开发板引出了两排50p、2.54mm间距的排座，可以用于外接24Bit的TFT液晶屏、CY7C68013 USB模块、高速ADC采集模块或者CMOS摄像头模块等； QM_MAX10_10M02SCU169开发板引出了芯片的3路按键用于测试； QM_MAX10_10M02SCU169开发板引出了芯片的3路LED用于测试； QM_MAX10_10M02SCU169开发板引出了芯片的JTAG调试端口，采用双排10p、2.54mm的排针；
上传时间： 2022-05-11
上传用户：zhengtiantong
