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上传时间： 2019-12-02
上传用户：hjd0303
fds 选择文件 X 飞行器半实物仿真初案_
上传时间： 2020-03-06
上传用户：stormfree
An optical fiber amplifier is a key component for enabling efficient transmission of wavelength-divisionmultiplexed(WDM)signalsoverlongdistances.Eventhough many alternative technologies were available, erbium-doped fiber amplifiers won theraceduringtheearly1990sandbecameastandardcomponentforlong-haulopti- caltelecommunicationssystems.However,owingtotherecentsuccessinproducing low-cost, high-power, semiconductor lasers operating near 1450 nm, the Raman amplifiertechnologyhasalsogainedprominenceinthedeploymentofmodernlight- wavesystems.Moreover,becauseofthepushforintegratedoptoelectroniccircuits, semiconductor optical amplifiers, rare-earth-doped planar waveguide amplifiers, and silicon optical amplifiers are also gaining much interest these days.
标签： Propagation Light Media Gain in
上传时间： 2020-05-27
上传用户：shancjb
Mobile multimedia communication is increasingly in demand because of the basic need to communi- cate at any time, anywhere, using any technology. In addition, to voice communication, people have a desire to access a range of other services that comprise multimedia elements—text, image, animation, high fidelity audio and video using mobile communication networks. To meet these demands, mobile communication technologies has evolved from analog to digital, and the networks have passed through a number of generations from first generation (1G) to fourth generation (4G).
标签： Communications Multimedia Concepts Mobile
上传时间： 2020-05-30
上传用户：shancjb
Ultra-wideband (UWB) technology enables high data-rate short-range communica- tion, in excess of hundredmegabit-per-secondsand up to multi-gigabit-per-seconds, over a wide spectrum of frequencies, while keeping power consumption at low lev- els. This low power operation results in a less-interfering co-existence with other existed communication technologies (e.g., UNII bands). In addition to carrying a huge amount of data over a distance of up to 230 feet at very low power (less than 0.5mW), the UWB signal has the ability to penetrate through the doors and other obstacles that tend to reflect signals at more limited bandwidths and higher power densities.
标签： Silicon-Based Front-Ends RF
上传时间： 2020-06-01
上传用户：shancjb
This book intends to prepare you to define Unified Communications (UC) for yourself and then get it to work for you. Each vendor pulls together from its available products a package of features related to voice, data, messaging, and image communications. That’s UC for one vendor, but it’s unlikely to match exactly the UC from another vendor. You need a detailed specification to know what you’ll see installed.
标签： Communications Unified VoIP and
上传时间： 2020-06-01
上传用户：shancjb
In the seven years since the first edition of this book was completed, Electrostatic Discharge (ESD) phenomena in integrated circuits (IC) continues to be important as technologies shrink and the speed and size of the chips increases. The phenom- ena related to ESD events in semiconductor devices take place outside the realm of normal device operation. Hence, the physics governing this behavior are not typ- ically found in general textbooks on semiconductors.
标签： Integrated Circuits Silicon ESD In
上传时间： 2020-06-05
上传用户：shancjb
Microengineering and Microelectromechanical systems (MEMS) have very few watertight definitions regarding their subjects and technologies. Microengineering can be described as the techniques, technologies, and practices involved in the realization of structures and devices with dimensions on the order of micrometers. MEMS often refer to mechanical devices with dimensions on the order of micrometers fabricated using techniques originating in the integrated circuit (IC) industry, with emphasis on silicon-based structures and integrated microelectronic circuitry. However, the term is now used to refer to a much wider range of microengineered devices and technologies.
标签： Microengineering Interfacing MEMS and
上传时间： 2020-06-06
上传用户：shancjb
GaN is an already well implanted semiconductor technology, widely diffused in the LED optoelectronics industry. For about 10 years, GaN devices have also been developed for RF wireless applications where they can replace Silicon transistors in some selected systems. That incursion in the RF field has open the door to the power switching capability in the lower frequency range and thus to the power electronic applications. Compared to Silicon, GaN exhibits largely better figures for most of the key specifications: Electric field, energy gap, electron mobility and melting point. Intrinsically, GaN could offer better performance than Silicon in terms of: breakdown voltage, switching frequency and Overall systems efficiency.
标签： GaN-on-Si Displace and SiC Si
上传时间： 2020-06-07
上传用户：shancjb
There have been many developments in the field of power electronics since the publication of the second edition, almost five years ago. Devices have become bigger and better - bigger silicon die, and current and voltage ratings. However, semiconductor devices have also become smaller and better, integrated circuit devices, that is. And the marriage of low power integrated circuit tecnology and high power semiconductors has resulted in benefit to both fields.
标签： Electronics Handbook Edition Power
上传时间： 2020-06-07
上传用户：shancjb
