If register should be written or read.This value is passed to the calback functions which support either reading or writing register values. Writing means that the application registers should be updated and reading means that the modbus protocol stack needs to know the Current register values.See also: eMBRegHoldingCB(), eMBRegCoilsCB(), eMBRegDiscreteCB() and eMBReglnputCB().Enumeration values: MB_REG_READ Read register values and pass to protocol stack.MB_REG_WRITE Update register values.Note: Note all ports implement this function.A port which wants to get an callback must define the macro MB_PORT_HAS_CLOSE to 1.Returns: If the resources where released it return eMBErrorCode:: MB_ENOERR. If the protocol stack is not in the disabled state it returns eMBErrorCode:: MB_EILLSTATE.Examples: LINUX/demo.c, MCF5235TCP/demo.c, STR71XTCP/demo.c, WIN32/demo. cpp, and WIN32TCP/demo. cpp.his function disables processing of Modbus frames.Returns: If the protocol stack has been disabled
标签： FreeModbus
上传时间： 2022-05-31
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#include "NUC1xx.h"#include "Hal.h"#include "pwm.h"//wait Current PWM cycle done, otherwise there maybe short pulse on FETvoid PWM_Stop(U8 ch){ switch(ch) { case PWM_CHANNEL_A: PWMA->u32CNR1 = 0; PWMA->u32CMR1 = 0; while(PWMA->u32PDR1 != 0); break; case PWM_CHANNEL_B: PWMA->u32CNR2 = 0; PWMA->u32CMR2 = 0; while(PWMA->u32PDR2 != 0); break; case PWM_CHANNEL_C: PWMA->u32CNR3 = 0; PWMA->u32CMR3 = 0; while(PWMA->u32PDR3 != 0); break; default: while(1); } PWMA->u32POE &= ~(1<<ch); PWMA->u32PCR &= ~(1<<(ch*8));}
上传时间： 2022-06-01
上传用户：kingwide
RX-8801 SA Features built-in 32.768 kHz DTCXO, High Stability Supports l'C-Bus's high speed mode (400 kHz)Alarm interrupt function for day, date, hour, and minute settings Fixed-cycle timer interrupt function Time update interrupt function32.768 kHz output with OE function Auto correction of leap years Wide interface voltage range: 2.2 V to 5.5 V Wide time-keeping voltage range:1.8 V to 5.5 V Low Current consumption: 0.84A/3V (Typ.)is an IC bus interface-compliant real-time clock which includes a 32.768 kHz DTCXO In addition to providing a calendar (year, month, date, day, hour, minute, second) function and a clock counter function, this module provides an abundance of other functions including an alarm function, fixed-cycle timer unction, time update interrupt function, and 32.768 kHz output function.The devices in this module are fabricated via a C-MOS process for low Current consumption, which enables ong-term battery back-up.
上传时间： 2022-06-17
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DescriptionThe IMX385LQR-C is a diagonal 8.35 mm (Type 1/2) CMOS active pixel type solid-state image sensor with a squarepixel array and 2.13 M effective pixels. This chip operates with analog 3.3 V, digital 1.2 V, and interface 1.8 V triplepower supply, and has low power consumption. High sensitivity, low dark Current and no smear are achieved throughthe adoption of R, G and B primary color mosaic filters. This chip features an electronic shutter with variablecharge-integration time.(Applications: Surveillance cameras)
标签： CMOS传感器 IMX385LQR-C
上传时间： 2022-06-18
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sony CMOS传感器datasheet，IMX178LQJ-C_Data_SheetDescriptionThe IMX178LQJ-C is a diagonal 8.92 mm (Type 1/1.8) CMOS active pixel type image sensor with a square pixelarray and 6.44 M effective pixels. This chip operates with analog 2.9 V, digital 1.2 V and interface 1.8 V triple powersupply, and has low power consumption.High sensitivity, low dark Current and no smear are achieved through the adoption of R, G and B primary colormosaic filters.This chip features an electronic shutter with variable charge-integration time.(Applications: Surveillance cameras, FA cameras, Industrial cameras)
标签： CMOS传感器 IMX178LQJ-C
上传时间： 2022-06-18
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le flows through MOS channel while Ih flows across PNP transistor Ih= a/(1-a) le, IE-le+lh=1/(1-a)' le Since IGBT has a long base PNP, a is mainly determined by ar si0 2ar= 1/cosh(1/La), La: ambipolar diff length a-0.5 (typical value)p MOSFET channel Current (saturation), le=U"Cox"W(2"Lch)"(Vc-Vth)le Thus, saturated collector Current Ic, sat=1/(1-a)"le=-1/(1-a)"UCox"W/(2Lch)"(Vo-Vth)2Also, transconductance gm, gm= 1/(1-a)"u' Cox W/Lch*(Vo-Vth)Turn-On1. Inversion layer is formed when Vge>Vth2. Apply positive collector bias, +Vce3. Electrons flow from N+ emitter to N-drift layer providing the base Current for the PNP transistor4. Since J1 is forward blased, hole carriers are injected from the collector (acts as an emitter).5. Injected hole carriers exceed the doping level of N-drift region (conductivity modulation). Turn-Off1. Remove gate bias (discharge gate)2. Cut off electron Current (base Current, le, of pnp transistor)
标签： igbt
上传时间： 2022-06-20
上传用户：wangshoupeng199
摘要：本文在分析1GBT的动态开关特性和过流状态下的电气特性的基础上，通过对常规的IGBT推挽驱动电路进行改进，得到了具有良好过流保护特性的IGBT驱动电路。该电路简单，可靠，易用，配合DSP等控制芯片能达到很好的驱动效果Abstract：Based on the studies on the dynamic switching and over-Current characteristics of IGBT，this paper makes some improvments to the original push-pull driving circuit，obtains a new IGBT driving circuit which has a good over-Current protection function.The circuit is simple，reliable and easy to use.Combined with controlling chips such as DSP it will do a great job in driving applications.关键词：IBGT：开关特性；驱动；过流保护；Key Words:IGBT；switching characteristics；driving:over-Current protection
上传时间： 2022-06-21
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本文以感应加热电源为研究对象，阐述了感应加热电源的基本原理及其发展趋势。对感应加热电源常用的两种拓扑结构-电流型逆变器和电压型逆变器做了比较分析，并分析了感应加热电源的各种调功方式。在对比几种功率调节方式的基础上，得出在整流侧调功有利于高频感应加热电源频率和功率的提高的结论，选择了不控整流加软斩波器调功的感应加热电源作为研究对象，针对传统硬斩波调功式感应加热电源功率损耗大的缺点，采用软斩波调功方式，设计了一种零电流开关准诺振变换器ZCS-QRCs（Zero-Current-switching-Quasi-resonant）倍频式串联 振高频感应加热电源。介绍了该软斩波调功器的组成结构及其工作原理，通过仿真和实验的方法研究了该软斩波器的性能，从而得出该软斩波器非常适合大功率高频感应加热电源应用场合的结论。同时设计了功率闭环控制系统和PI功率调节器，将感应加热电源的功率控制问题转化为Buck斩波器的电压控制问题。针对目前IGBT器件频率较低的实际情况，本文提出了一种新的逆变拓扑-通过IGBT的并联来实现倍频，从而在保证感应加热电源大功率的前提下提高了其工作频率，并在分析其工作原理的基础上进行了仿真，验证了理论分析的正确性，达到了预期的效果。另外，本文还设计了数字锁相环（DPLL），使逆变器始终保持在功率因数近似为1的状态下工作，实现电源的高效运行。最后，分析并设计了1GBT的缓冲吸收电路。本文第五章设计了一台150kHz，10KW的倍频式感应加热电源实验样机，其中斩波器频率为20kHz，逆变器工作频率为150kHz（每个IGBT工作频率为75kHz），控制孩心采用TI公司的TMS320F2812 DSP控制芯片，简化了系统结构。实验结果表明，该倍频式感应加热电源实现了斩波器和逆变器功率器件的软开关，有效的减小了开关损耗，并实现了数字化，提高了整机效率。文章给出了整机的结构设计，直流斩波部分控制框图，逆变控制框图，驱动电路的设计和保护电路的设计。同时，给出了关键电路的仿真和实验波形。
上传时间： 2022-06-22
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文章首先阐述了整个方案的工作原理，给出LDO设计的指标要求；其次，依据系统方案的指标要求和制造1艺约束，实现包含误差放大器、基准源和保护电路等了模块在内的电压调整器：此外，文章还着重探讨了“如何利用放大器驱动100pF数量级的大电容负载"的问题；最后，给出整个模块总体电路的仿真验证结果。LDO的架构分析和设计以及基准源的设计是本文的核心内容。在LDO架构设计部分，文章基于对三种不同LDO拓扑的分析，选择并实现了含缓冲器级的LDO./设计中通过改进反馈网络，采用反馈电容，实现对LDO的环路补偿。同时，为提高误差放大器驱动功率管的能力、适应LDO低功耗发展的需求，文章探讨了如何使用放大器驱动大负载电容的问题，基于密勒定理和根轨迹原理，本文通过研究密勒电容的作用，采用MPC（Miller-Path-Compersation）结构，实践了两级放大器驱动大负载电容的方案，并把MPC补偿技术推广到三级放大器的设计中。文章设计的CRF（CRF：Current Re ference controlled by Feedback）电流基准是基于对传统自启动基准电流源的改进实现的。CRF基准电流源架构中存在一条阻性的电流道路，确保其在加载电源电压的过程中能够实现快速启动，响应速度达到1ps：而传统自启动基准电流源在相同的设计参数下，响应速度长达120us.CRF基准电流源突破了响应速度对其应用的限制。
上传时间： 2022-06-23
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开关升压型锂电池充电管理芯片FLD5302/3概述 为开关型两节或三节锂离子/锂 聚合物电池充电管理芯片，非常适合于便携 式设备的充电管理应用。 集电压和电 流调节器、预充、充电状态指示和充电截止 适配器自适应等功能于一体，采用 SOP-8 封装。 对电池充电分为三个阶段：预 充（ Pre-charge ）、恒流（CC/Constant Current）、恒压（CV/Constant Voltage）过程。 集成过压及过流保护，确保电芯的 安全。
上传时间： 2022-06-25
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