代码搜索:strobe

找到约 441 项符合「strobe」的源代码

代码结果 441
www.eeworm.com/read/340665/3268994

c test.c

extern int led_putnum(); #define DELAY 900000 extern char strobe(),putDebugChar(),print(),putnum(); extern char foobar(); extern char breakpoint(); #define TESTSTUB 1 main() { unsigned char x;
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tab veriuser_vcs.tab

// Example Synopsys VCS PLI table to register PLI applications // For the book, "The Verilog PLI Handbook" $my_strobe data=0 check=PLIbook_MyStrobe_checktf call=PLIbook_MyStrobe_c
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v sd_top.v

`timescale 1 ns / 100 ps module sd_top( data_req, // sdram select wr_l, // write strobe sdram_en, // sdram enable clk, // sdram clock rs
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h spitz.h

/* * Hardware specific definitions for SL-Cx000 series of PDAs * * Copyright (c) 2005 Alexander Wykes * Copyright (c) 2005 Richard Purdie * * Based on Sharp's 2.4 kernel patches * * This progr
www.eeworm.com/read/202490/15381523

txt printer port.txt

(编程控制示例)(为汇编代码) // 此段代码为并口向打印机进行写数据,并发送控制信息。 #define LPT_CLEAR_MASK 0x40 #define LPT_STROBE_HI 0x0D #define LPT_STROBE_LO 0x0C #define LPT_STATUS_BITS 0xF8 #define LPT_BITS_INVERT 0x48 #def
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v adc_max186_sm.v

//*****************************************************************************************// // Project : FPGA based Digital Design using Verilog HDL // File : adc_max186_sm.v /
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v mem_usr_rd.v

/////////////////////////////////////////////////////////////////////////////// // Copyright (c) 2005 Xilinx, Inc. // All Rights Reserved //////////////////////////////////////////////////////////////
www.eeworm.com/read/183819/9136600

txt ddr_sdram_post_summary.txt

NOTE: Speed Grade c6 used for analysis NOTE: Memory device can operate at 85.00 MHz with a lower CL than 2.5 DDR read data capture: DDR Data to DQS strobe edges at capture registers.
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txt ddr_sdram_post_summary.txt

NOTE: Speed Grade c6 used for analysis NOTE: Memory device can operate at 85.00 MHz with a lower CL than 2.5 DDR read data capture: DDR Data to DQS strobe edges at capture registers.
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txt ddr_sdram_post_summary.txt

NOTE: Speed Grade c6 used for analysis NOTE: Memory device can operate at 85.00 MHz with a lower CL than 2.5 DDR read data capture: DDR Data to DQS strobe edges at capture registers.