Since its release, Arduino has become more than just a development platform; it has become a culture built around the idea of open source and open hardware, and one that is reimagining computer science and education. Arduino has opened hardware development by making the starting skills easy to obtain, but retaining the complexities of real-world application. This combination makes Arduino a perfect environment for school students, seasoned developers, and designers. This is the first Arduino book to hold the title of “Pro,” and demonstrates skills and concepts that are used by developers in a more advanced setting. Going beyond projects, this book provides examples that demonstrate concepts that can be easily integrated into many different projects and provide inspiration for future ones. The focus of this book is as a transition from the intermediate to the professional.
上传时间： 2020-06-09
上传用户：shancjb
The past decade has seen an explosion of machine learning research and appli- cations; especially, deep learning methods have enabled key advances in many applicationdomains,suchas computervision,speechprocessing,andgameplaying. However, the performance of many machine learning methods is very sensitive to a plethora of design decisions, which constitutes a considerable barrier for new users. This is particularly true in the booming field of deep learning, where human engineers need to select the right neural architectures, training procedures, regularization methods, and hyperparameters of all of these components in order to make their networks do what they are supposed to do with sufficient performance. This process has to be repeated for every application. Even experts are often left with tedious episodes of trial and error until they identify a good set of choices for a particular dataset.
标签： Auto-Machine-Learning-Methods-Sys tems-Challenges
上传时间： 2020-06-10
上传用户：shancjb
Artificial Intelligence (AI) has undoubtedly been one of the most important buz- zwords over the past years. The goal in AI is to design algorithms that transform com- puters into “intelligent” agents. By intelligence here we do not necessarily mean an extraordinary level of smartness shown by superhuman; it rather often involves very basic problems that humans solve very frequently in their day-to-day life. This can be as simple as recognizing faces in an image, driving a car, playing a board game, or reading (and understanding) an article in a newspaper. The intelligent behaviour ex- hibited by humans when “reading” is one of the main goals for a subfield of AI called Natural Language Processing (NLP). Natural language 1 is one of the most complex tools used by humans for a wide range of reasons, for instance to communicate with others, to express thoughts, feelings and ideas, to ask questions, or to give instruc- tions. Therefore, it is crucial for computers to possess the ability to use the same tool in order to effectively interact with humans.
标签： Embeddings Processing Language Natural in
上传时间： 2020-06-10
上传用户：shancjb
%this is an example demonstrating the Radial Basis Function %if you select a RBF that supports it (Gausian, or 1st or 3rd order %polyharmonic spline), this also calculates a line integral between two %points.
上传时间： 2021-07-02
上传用户：19800358905
Multisim官方示例Multisim仿真例程基础电路范例135例合集:Chapter 1 - RLC CircuitsChapter 2 - DiodesChapter 3 - TransistorsChapter 4 - AmplifiersChapter 5 - OpampsChapter 6 - FiltersChapter 7 - Miscellaneous CircuitsFundamental Circuits.pdf004 Parallel DC Circuits.ms10005 Series-Parrallel DC Circuit.ms10006 Current Analysis.ms10007 Millmans Theorem 1.ms10008 Millmans Theorem 2.ms10009 Kirchhoff's Current Law.ms10010 Thevenin's Theorem.ms10011 Superposition Principle.ms10012 Nortons Theorem and Source Conversion.ms10013 AC Voltage Measurement.ms10014 Frequency Response of the Series RL Network.ms10015 RL High and Low Pass Filter.ms10016 Frequency Response of the Series RC Network.ms10017 RC High and Low Pass Filter.ms10019 Center-Tapped Full-Wave Rectifier.ms10020 Bridge Rectifier.ms10021 Capacitor-Input Rectifier Filter.ms10022 Diode Clipper (Limiter).ms10023 Diode Clipper.ms10024 Diode Clamper (DC Restorer).ms10025 Diode Voltage Doubler.ms10026 Zener Diode and Voltage Regulation 1.ms10027 Zener Diode and Voltage Regulation 2.ms10028 Zener Diode and Voltage Regulation 3.ms10105 TTL Inverter.ms10107 TTL Gate.ms10109 OR Gate Circuit.ms10111 Over-Damp Circuit.ms10113 Critical-Damp Circuit.ms10115 Series RLC Circuit 1.ms10117 Clapp Oscillator.ms10119 Differential Amplifier 1.ms10121 Differential Amplifier in Common Mode.ms10123 LC Oscillator with Unity Gain Buffer.ms10125 Notch Filter.ms10127 PNP Differential Pair.ms10129 Crossover Network.ms10131 Second-Order High-Pass Chebyshev Filter.ms10133 Third-Order High-Pass Chebyshev Filter.ms10135 Fifth-Order High-Pass Filter.ms10
标签： multisim
上传时间： 2021-10-27
上传用户：trh505
那么我们可以进行如下计算：1，输出电流Iout=Pout/Udc=600/400=1.5A2，最大输入功率Pin=Pout/η=600/0.92=652W3，输入电流最大有效值Iinrmsmax=Pin/Umin=652/85=7.67A4，那么输入电流有效值峰值为Iinrmsmax*1.414=10.85A5，高频纹波电流取输入电流峰值的20%，那么Ihf=0.2*Iinrmsmax=0.2*10.85=2.17A6，那么输入电感电流最大峰值为：ILpk=Iinrmsmax+0.5*Ihf=10.85+0.5*2.17=11.94A7，那么升压电感最小值为Lmin=(0.25*Uout)/(Ihf*fs)=(0.25*400)/(2.17*65KHz)=709uH8，输出电容最小值为：Cmin=Iout/(3.14*2*fac*Voutp-p)=1.5/(3.14*2*50*10)=477.7uF，实际电路中还要考虑hold up时间，所以电容容量可能需要重新按照hold up的时间要求来重新计算。实际的电路中，我用了1320uF，4只330uF的并联。
标签： 变压器
上传时间： 2021-12-04
上传用户：
1. Scope ......................................................................................................................................................................... 12. DDR4 SDRAM Package Pinout and Addressing ....................................................................................................... 22.1 DDR4 SDRAM Row for X4,X8 and X16 ................................................................................................................22.2 DDR4 SDRAM Ball Pitch........................................................................................................................................22.3 DDR4 SDRAM Columns for X4,X8 and X16 ..........................................................................................................22.4 DDR4 SDRAM X4/8 Ballout using MO-207......................................................................................................... 22.5 DDR4 SDRAM X16 Ballout using MO-207.............................................................................................................32.6 Pinout Description ..................................................................................................................................................52.7 DDR4 SDRAM Addressing.....................................................................................................................................73. Functional Description ...............................................................................................................................................83.1 Simplified State Diagram ....................................................................................................................................83.2 Basic Functionality..................................................................................................................................................93.3 RESET and Initialization Procedure .....................................................................................................................103.3.1 Power-up Initialization Sequence .............................................................................................................103.3.2 Reset Initialization with Stable Power ......................................................................................................113.4 Register Definition ................................................................................................................................................123.4.1 Programming the mode registers .............................................................................................................123.5 Mode Register ......................................................................................................................................................134. DDR4 SDRAM Command Description and Operation ............................................................................................. 244.1 Command Truth Table ..........................................................................................................................................244.2 CKE Truth Table ...................................................................................................................................................254.3 Burst Length, Type and Order ..............................................................................................................................264.3.1 BL8 Burst order with CRC Enabled .........................................................................................................264.4 DLL-off Mode & DLL on/off Switching procedure ................................................................................................274.4.1 DLL on/off switching procedure ...............................................................................................................274.4.2 DLL “on” to DLL “off” Procedure ..............................................................................................................274.4.3 DLL “off” to DLL “on” Procedure ..............................................................................................................284.5 DLL-off Mode........................................................................................................................................................294.6 Input Clock Frequency Change ............................................................................................................................304.7 Write Leveling.......................................................................................................................................................314.7.1 DRAM setting for write leveling & DRAM termination function in that mode ............................................324.7.2 Procedure Description .............................................................................................................................334.7.3 Write Leveling Mode Exit .........................................................................................................................34
标签： DDR4
上传时间： 2022-01-09
上传用户：
mosfet并联使用介绍了并联使用的注意事项，特别注意避开Vgsth zero thermal coefficient以下的正温特性设计
上传时间： 2022-03-01
上传用户：bluedrops
华为AI安全白皮书2018-cn近年来，随着海量数据的积累、计算能力的发展、机器学习方法与系统的持续创新与演进，诸如图像识别、语音识 别、自然语言翻译等人工智能技术得到普遍部署和广泛应用。越来越多公司都将增大在AI的投入，将其作为业务发展 的重心。华为全球产业愿景预测：到2025年，全球将实现1000亿联接，覆盖77%的人口；85%的企业应用将部署到 云上；智能家庭机器人将进入12%的家庭，形成千亿美元的市场。 人工智能技术的发展和广泛的商业应用充分预示着一个万物智能的社会正在快速到来。1956年，麦卡锡、明斯基、 香农等人提出“人工智能”概念。60年后的今天，伴随着谷歌DeepMind开发的围棋程序AlphaGo战胜人类围棋冠 军，人工智能技术开始全面爆发。如今，芯片和传感器的发展使“+智能”成为大势所趋：交通+智能，最懂你的 路；医疗+智能，最懂你的痛；制造+智能，最懂你所需。加州大学伯克利分校的学者们认为人工智能在过去二十年 快速崛起主要归结于如下三点原因[1]：1）海量数据：随着互联网的兴起，数据以语音、视频和文字等形式快速增 长；海量数据为机器学习算法提供了充足的营养，促使人工智能技术快速发展。2）高扩展计算机和软件系统：近 年来深度学习成功主要归功于新一波的CPU集群、GPU和TPU等专用硬件和相关的软件平台。3）已有资源的可获得 性：大量的开源软件协助处理数据和支持AI相关工作，节省了大量的开发时间和费用；同时许多云服务为开发者提供 了随时可获取的计算和存储资源。 在机器人、虚拟助手、自动驾驶、智能交通、智能制造、智慧城市等各个行业，人工智能正朝着历史性时刻迈进。谷 歌、微软、亚马逊等大公司纷纷将AI作为引领未来的核心发展战略。2017年谷歌DeepMind升级版的AlphaGo Zero横 空出世；它不再需要人类棋谱数据，而是进行自我博弈，经过短短3天的自我训练就强势打败了AlphaGo。AlphaGo Zero能够发现新知识并发展出打破常规的新策略，让我们看到了利用人工智能技术改变人类命运的巨大潜能。 我们现在看到的只是一个开始；未来，将会是一个全联接、超智能的世界。人工智能将为人们带来极致的体验，将 积极影响人们的工作和生活，带来经济的繁荣与发展。
上传时间： 2022-03-06
上传用户：
目前电动汽车主要以锂电池作为动力来源,为了提高锂电池的使用时间和安全性,为锂电池提供安全良好的运行环境,电池管理系统应运而生。BMS主控单元基于S32K144汽车级单片机,通过主从式网络控制结构能够对锂电池的各个参数进行采集与分析。采用扩展卡尔曼滤波对电池的荷电状态(SOC)进行估算,克服普通估算方法无法避免电池内阻误差的缺点,通过Matlab/Simulink软件仿真验证可使估算误差达到2%以内。At present,electric vehicles mainly use lithium batteries as the power source.In order to improve the running time and safety of lithium batteries,a safe and good operating environment for power batteries is provided,and a battery management system(BMS) has emerged.The BMS main control unit is based on the S32K144 automotive-grade control chip.Through the master-slave network control structure,it can collect and analyze the various parameters of the lithium battery.The Extended Kalman Filter(EKF) is used to estimate the state of charge(SOC) of the battery,which overcomes the shortcomings of the internal estimation method that cannot overcome the internal resistance error of the battery.It can be verified by Matlab/Simulink software simulation.The estimation error is within 2%.
上传时间： 2022-03-26
上传用户：XuVshu
