电子书-RTL Design Style Guide for Verilog HDL540页A FF having a fixed input value is generated from the description in the upper portion of Example 2-21. In this case, ’0’ is output when the reset signal is asynchronously input, and ’1’ is output when the START signal rises. Therefore, the FF data input is fixed at the power supply, since the Typical value ’1’ is output following the rise of the START signal. When FF input values are fixed, the fixed inputs become untestable and the fault detection rate drops. When implementing a scan design and converting to a scan FF, the scan may not be executed properl not be executed properly, so such descriptions , so such descriptions are not are not recommended. recommended.[1] As in the lower part of Example 2-21, be sure to construct a synchronous type of circuit and ensure that the clock signal is input to the clock pin of the FF. Other than the sample shown in Example 2-21, there are situations where for certain control signals, those that had been switched due to the conditions of an external input will no longer need to be switched, leaving only a FF. If logic exists in a lower level and a fixed value is input from an upper level, the input value of the FF may also end up being fixed as the result of optimization with logic synthesis tools. In a situation like this, while perhaps difficult to completely eliminate, the problem should be avoided as much as possible.
标签： RTL verilog hdl
上传时间： 2022-03-21
上传用户：canderile
le flows through MOS channel while Ih flows across PNP transistor Ih= a/(1-a) le, IE-le+lh=1/(1-a)' le Since IGBT has a long base PNP, a is mainly determined by ar si0 2ar= 1/cosh(1/La), La: ambipolar diff length a-0.5 (Typical value)p MOSFET channel current (saturation), le=U"Cox"W(2"Lch)"(Vc-Vth)le Thus, saturated collector current Ic, sat=1/(1-a)"le=-1/(1-a)"UCox"W/(2Lch)"(Vo-Vth)2Also, transconductance gm, gm= 1/(1-a)"u' Cox W/Lch*(Vo-Vth)Turn-On1. Inversion layer is formed when Vge>Vth2. Apply positive collector bias, +Vce3. Electrons flow from N+ emitter to N-drift layer providing the base current for the PNP transistor4. Since J1 is forward blased, hole carriers are injected from the collector (acts as an emitter).5. Injected hole carriers exceed the doping level of N-drift region (conductivity modulation). Turn-Off1. Remove gate bias (discharge gate)2. Cut off electron current (base current, le, of pnp transistor)
标签： igbt
上传时间： 2022-06-20
上传用户：wangshoupeng199
Datasheet SHT3x-DISHumidity and Temperature Sensor Fully calibrated, linearized, and temperaturecompensated digital output Wide supply voltage range, from 2.4 V to 5.5 V I2C Interface with communication speeds up to 1MHz and two user selectable addresses Typical accuracy of 2 %RH and 0.3 °C Very fast start-up and measurement time Tiny 8-Pin DFN package
上传时间： 2022-06-29
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