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Process<b>or</b>s

  • 基于Android平台智能云导游系统的探索

    智能手机以及新一代移动通信技术的迅速崛起,使得人们的日常生活变得更加便利和丰富多彩。在此同时,旅游行业对于智能导游的服务也变得越来越重视,游客的需求也越来越强烈!在此背景下,对智能导游服务进行了深入的了解和研究,并结合先进的“云计算”技术和B/S架构模式,提出了一套基于Android平台的智能云导游系统,内容新颖,实用可靠,有一定的推广和应用价值。

    标签: Android 导游系统

    上传时间: 2013-10-28

    上传用户:xcsx1945

  • realview mdk 3.2 下载

    1.增加的设备支持: Atmel AT91SAM9Rxx Cirrus Logic CS7401xx-IQZ Luminary Micro LM3S576x, LM3S5752, LM3S5747, LM3S573x, LM3S5662, LM3S5652, LM3S5632, LM3S3759, LM3S3749, and LM3S3739 NXP LPC32XX and LPC2460 STMicroelectronics STR912FAZ4X, STR912FAW4X, STR911FAW4X, STR911FAM4X, STR910FAW32, and STR910FAZ32 2.修改了NXP LPC23XX/24XX的头文件库 3.增加了ST-LINK II的调试支持 4.增加了对Cortex-M3 内核芯片的RTX Event Viewer 的支持 5.增加了MCBSTM32: STM32 FLASH OPTION BYTES PROGRAMMING 6.增加了ULINK2对Cortex-M3的SWV功能的调试 7.增强了使用GNU在MDK下调试M1,M3,ARM7,ARM9的调试功能( Using μVision with CodeSourcery GNU ARM Toolchain.) 8.增加了大量经典开发板例程 Boards目录列表: ├─Embest 深圳市英蓓特公司开发板例程 │ ├─AT91EB40X-40008 │ ├─S3CEB2410 │ ├─ATEBSAM7S │ ├─LPC22EB06-I │ ├─LPCEB2000-A │ ├─LPCEB2000-B │ ├─LPCEB2000-S │ ├─str710 │ ├─str711 │ ├─str730 │ ├─str750 │ ├─STR912 │ ├─STM32V100 │ ├─STM32R100 │ ├─ATEB9200 ├─ADI ADI半导体的芯片例程 │ ├─ADuC702X │ └─ADuC712x ├─Atmel Atmel半导体的芯片例程 │ ├─AT91RM9200-EK │ ├─AT91SAM7A3-EK │ ├─AT91SAM7S-EK │ ├─AT91SAM7SE-EK │ ├─AT91SAM7X-EK │ ├─AT91SAM9260-EK │ ├─AT91SAM9261-EK │ ├─AT91SAM9263-EK ├─Keil Keil公司的开发板例程 │ ├─MCB2100 │ ├─MCB2103 │ ├─MCB2130 │ ├─MCB2140 │ ├─MCB2300 │ ├─MCB2400 │ ├─MCB2900 │ ├─MCBLM3S │ ├─MCBSTM32 │ ├─MCBSTR7 │ ├─MCBSTR730 │ ├─MCBSTR750 │ └─MCBSTR9 ├─Luminary Luminary半导体公司的芯片例程 │ ├─ek-lm3s1968 │ ├─ek-lm3s3748 │ ├─ek-lm3s3768 │ ├─dk-lm3s101 │ ├─dk-lm3s102 │ ├─dk-lm3s301 │ ├─dk-lm3s801 │ ├─dk-lm3s811 │ ├─dk-lm3s815 │ ├─dk-lm3s817 │ ├─dk-lm3s818 │ ├─dk-lm3s828 │ ├─ek-lm3s2965 │ ├─ek-lm3s6965 │ ├─ek-lm3s811 │ └─ek-lm3s8962 ├─NXP NXP半导体公司的芯片例程 │ ├─LH79524 │ ├─LH7A404 │ └─SJA2510 ├─OKI OKI半导体公司的芯片例程 │ ├─ML674000 │ ├─ML67Q4003 │ ├─ML67Q4051 │ ├─ML67Q4061 │ ├─ML67Q5003 │ └─ML69Q6203 ├─Samsung Samsung半导体公司的芯片例程 │ ├─S3C2440 │ ├─S3C44001 │ └─S3F4A0K ├─ST ST半导体公司的芯片例程 │ ├─CQ-STARM2 │ ├─EK-STM32F │ ├─STM32F10X_EVAL │ ├─STR710 │ ├─STR730 │ ├─STR750 │ ├─STR910 │ └─STR9_DONGLE ├─TI TI半导体公司的芯片例程 │ ├─TMS470R1A256 │ └─TMS470R1B1M ├─Winbond Winbond半导体公司的芯片例程 │ └─W90P710 └─ ...

    标签: realview mdk 3.2

    上传时间: 2013-10-13

    上传用户:zhangliming420

  • 差分電路中單端及混合模式S-參數的使用

    Single-Ended and Differential S-Parameters Differential circuits have been important incommunication systems for many years. In the past,differential communication circuits operated at lowfrequencies, where they could be designed andanalyzed using lumped-element models andtechniques. With the frequency of operationincreasing beyond 1GHz, and above 1Gbps fordigital communications, this lumped-elementapproach is no longer valid, because the physicalsize of the circuit approaches the size of awavelength.Distributed models and analysis techniques are nowused instead of lumped-element techniques.Scattering parameters, or S-parameters, have beendeveloped for this purpose [1]. These S-parametersare defined for single-ended networks. S-parameterscan be used to describe differential networks, but astrict definition was not developed until Bockelmanand others addressed this issue [2]. Bockelman’swork also included a study on how to adapt single-ended S-parameters for use with differential circuits[2]. This adaptation, called “mixed-mode S-parameters,” addresses differential and common-mode operation, as well as the conversion betweenthe two modes of operation.This application note will explain the use of single-ended and mixed-mode S-parameters, and the basicconcepts of microwave measurement calibration.

    标签: 差分電路 單端 模式

    上传时间: 2014-03-25

    上传用户:yyyyyyyyyy

  • 电子电路百科全书

    该电路集包括了从业界享有盛名的公司搜集到的大量最新电路,体现了丰富的设计思想。为便于读者理解和应用这些电路,本书几乎对每个电路都附有简要说明。$ C' I" t% P5 l3 V. l0 K, B 本书可供电子技术工作者、高等院校和中等专科学校师生、电子爱好者阅读和参考。( H& s, \, z6 ~% D: @

    标签: 电子电路 百科

    上传时间: 2013-10-19

    上传用户:songnanhua

  • Xilinx UltraScale:新一代架构满足您的新一代架构需求(EN)

      中文版详情浏览:http://www.elecfans.com/emb/fpga/20130715324029.html   Xilinx UltraScale:The Next-Generation Architecture for Your Next-Generation Architecture    The Xilinx® UltraScale™ architecture delivers unprecedented levels of integration and capability with ASIC-class system- level performance for the most demanding applications.   The UltraScale architecture is the industr y's f irst application of leading-edge ASIC architectural enhancements in an All Programmable architecture that scales from 20 nm planar through 16 nm FinFET technologies and beyond, in addition to scaling from monolithic through 3D ICs. Through analytical co-optimization with the X ilinx V ivado® Design Suite, the UltraScale architecture provides massive routing capacity while intelligently resolving typical bottlenecks in ways never before possible. This design synergy achieves greater than 90% utilization with no performance degradation.   Some of the UltraScale architecture breakthroughs include:   • Strategic placement (virtually anywhere on the die) of ASIC-like system clocks, reducing clock skew by up to 50%    • Latency-producing pipelining is virtually unnecessary in systems with massively parallel bus architecture, increasing system speed and capability   • Potential timing-closure problems and interconnect bottlenecks are eliminated, even in systems requiring 90% or more resource utilization   • 3D IC integration makes it possible to build larger devices one process generation ahead of the current industr y standard    • Greatly increased system performance, including multi-gigabit serial transceivers, I/O, and memor y bandwidth is available within even smaller system power budgets   • Greatly enhanced DSP and packet handling   The Xilinx UltraScale architecture opens up whole new dimensions for designers of ultra-high-capacity solutions.

    标签: UltraScale Xilinx 架构

    上传时间: 2013-11-21

    上传用户:wxqman

  • 采用TÜV认证的FPGA开发功能安全系统

    This white paper discusses how market trends, the need for increased productivity, and new legislation have accelerated the use of safety systems in industrial machinery. This TÜV-qualified FPGA design methodology is changing the paradigms of safety designs and will greatly reduce development effort, system complexity, and time to market. This allows FPGA users to design their own customized safety controllers and provides a significant competitive advantage over traditional microcontroller or ASIC-based designs. Introduction The basic motivation of deploying functional safety systems is to ensure safe operation as well as safe behavior in cases of failure. Examples of functional safety systems include train brakes, proximity sensors for hazardous areas around machines such as fast-moving robots, and distributed control systems in process automation equipment such as those used in petrochemical plants. The International Electrotechnical Commission’s standard, IEC 61508: “Functional safety of electrical/electronic/programmable electronic safety-related systems,” is understood as the standard for designing safety systems for electrical, electronic, and programmable electronic (E/E/PE) equipment. This standard was developed in the mid-1980s and has been revised several times to cover the technical advances in various industries. In addition, derivative standards have been developed for specific markets and applications that prescribe the particular requirements on functional safety systems in these industry applications. Example applications include process automation (IEC 61511), machine automation (IEC 62061), transportation (railway EN 50128), medical (IEC 62304), automotive (ISO 26262), power generation, distribution, and transportation. 图Figure 1. Local Safety System

    标签: FPGA 安全系统

    上传时间: 2013-11-14

    上传用户:zoudejile

  • 磁芯电感器的谐波失真分析

    磁芯电感器的谐波失真分析 摘  要:简述了改进铁氧体软磁材料比损耗系数和磁滞常数ηB,从而降低总谐波失真THD的历史过程,分析了诸多因数对谐波测量的影响,提出了磁心性能的调控方向。 关键词:比损耗系数, 磁滞常数ηB ,直流偏置特性DC-Bias,总谐波失真THD  Analysis on THD of the fer rite co res u se d i n i nductancShi Yan Nanjing Finemag Technology Co. Ltd., Nanjing 210033   Abstract:    Histrory of decreasing THD by improving the ratio loss coefficient and hysteresis constant of soft magnetic ferrite is briefly narrated. The effect of many factors which affect the harmonic wave testing is analysed. The way of improving the performance of ferrite cores is put forward.  Key words: ratio loss coefficient,hysteresis constant,DC-Bias,THD  近年来,变压器生产厂家和软磁铁氧体生产厂家,在电感器和变压器产品的总谐波失真指标控制上,进行了深入的探讨和广泛的合作,逐步弄清了一些似是而非的问题。从工艺技术上采取了不少有效措施,促进了质量问题的迅速解决。本文将就此热门话题作一些粗浅探讨。  一、 历史回顾 总谐波失真(Total harmonic distortion) ,简称THD,并不是什么新的概念,早在几十年前的载波通信技术中就已有严格要求<1>。1978年邮电部公布的标准YD/Z17-78“载波用铁氧体罐形磁心”中,规定了高μQ材料制作的无中心柱配对罐形磁心详细的测试电路和方法。如图一电路所示,利用LC组成的150KHz低通滤波器在高电平输入的情况下测量磁心产生的非线性失真。这种相对比较的实用方法,专用于无中心柱配对罐形磁心的谐波衰耗测试。 这种磁心主要用于载波电报、电话设备的遥测振荡器和线路放大器系统,其非线性失真有很严格的要求。  图中  ZD   —— QF867 型阻容式载频振荡器,输出阻抗 150Ω, Ld47 —— 47KHz 低通滤波器,阻抗 150Ω,阻带衰耗大于61dB,       Lg88 ——并联高低通滤波器,阻抗 150Ω,三次谐波衰耗大于61dB Ld88 ——并联高低通滤波器,阻抗 150Ω,三次谐波衰耗大于61dB FD   —— 30~50KHz 放大器, 阻抗 150Ω, 增益不小于 43 dB,三次谐波衰耗b3(0)≥91 dB, DP  —— Qp373 选频电平表,输入高阻抗, L ——被测无心罐形磁心及线圈, C  ——聚苯乙烯薄膜电容器CMO-100V-707APF±0.5%,二只。 测量时,所配用线圈应用丝包铜电磁线SQJ9×0.12(JB661-75)在直径为16.1mm的线架上绕制 120 匝, (线架为一格) , 其空心电感值为 318μH(误差1%) 被测磁心配对安装好后,先调节振荡器频率为 36.6~40KHz,  使输出电平值为+17.4 dB, 即选频表在 22′端子测得的主波电平 (P2)为+17.4 dB,然后在33′端子处测得输出的三次谐波电平(P3), 则三次谐波衰耗值为:b3(+2)= P2+S+ P3 式中:S 为放大器增益dB 从以往的资料引证, 就可以发现谐波失真的测量是一项很精细的工作,其中测量系统的高、低通滤波器,信号源和放大器本身的三次谐波衰耗控制很严,阻抗必须匹配,薄膜电容器的非线性也有相应要求。滤波器的电感全由不带任何磁介质的大空心线圈绕成,以保证本身的“洁净” ,不至于造成对磁心分选的误判。 为了满足多路通信整机的小型化和稳定性要求, 必须生产低损耗高稳定磁心。上世纪 70 年代初,1409 所和四机部、邮电部各厂,从工艺上改变了推板空气窑烧结,出窑后经真空罐冷却的落后方式,改用真空炉,并控制烧结、冷却气氛。技术上采用共沉淀法攻关试制出了μQ乘积 60 万和 100 万的低损耗高稳定材料,在此基础上,还实现了高μ7000~10000材料的突破,从而大大缩短了与国外企业的技术差异。当时正处于通信技术由FDM(频率划分调制)向PCM(脉冲编码调制) 转换时期, 日本人明石雅夫发表了μQ乘积125 万为 0.8×10 ,100KHz)的超优铁氧体材料<3>,其磁滞系数降为优铁

    标签: 磁芯 电感器 谐波失真

    上传时间: 2013-12-15

    上传用户:天空说我在

  • 5位数微电脑型盘面式电表(小功率的)(24*48mm)

    特点: 精确度0.05%满刻度±1位數 可量测交直流电流/交直流电压/电位计/Pt-100/热电偶/荷重元/电阻等信号 热电偶SENSOR输入种类J/K/T/E/R/S/B可任意规划 显示范围-19999-99999可任意规划 小数点可任意规划 尺寸小,稳定性高 CE认证

    标签: 24 48 mm 微电脑

    上传时间: 2013-10-31

    上传用户:wsq921779565

  • 检测系统的基本特性

    检测系统的基本特性 2.1 检测系统的静态特性及指标2.1.1检测系统的静态特性 一、静态测量和静态特性静态测量:测量过程中被测量保持恒定不变(即dx/dt=0系统处于稳定状态)时的测量。静态特性(标度特性):在静态测量中,检测系统的输出-输入特性。        例如:理想的线性检测系统:             如图2-1-1(a)所示带有零位值的线性检测系统:   如图2-1-1(b)所示    二、静态特性的校准(标定)条件――静态标准条件。 2.1.2检测系统的静态性能指标一、 测量范围和量程1、 测量范围:(xmin,xmax)xmin――检测系统所能测量到的最小被测输入量(下限)xmax――检测系统所能测量到的最大被测输入量(上限)。2、量程:      二、灵敏度S                                               串接系统的总灵敏度为各组成环节灵敏度的连乘积 三、 分辨力与分辨率1、分辨力:能引起输出量发生变化时输入量的最小变化量 。2、分辨率:全量程中最大的 即 与满量程L之比的百分数。四、精度(见第三章)

    标签: 检测系统 基本特性

    上传时间: 2013-11-15

    上传用户:yy_cn

  • 基本矩阵运算 : + - *, power, transpose, trace, determinant, minor, matrix of minor, cofactor, matrix of co

    基本矩阵运算 : + - *, power, transpose, trace, determinant, minor, matrix of minor, cofactor, matrix of cofactor, adjoint, inverse, gauss, gaussjordan, linear transformation, LU decomposition , Gram-Schmidt process, similarity. b) Basic vectors functions : norm, distance, innerproduct,coldim, rowdim, rank, nullity. *

    标签: matrix minor determinant transpose

    上传时间: 2013-12-09

    上传用户:541657925