These are P-Channel enhancement mode silicon gate power fi eld effect transistors. They are ad
These are P-Channel enhancement mode silicon gate power fi eld effect transistors. They are ad...
These are P-Channel enhancement mode silicon gate power fi eld effect transistors. They are ad...
AEC-Q100 qualified • 12 V and 24 V battery systems compliance • 3.3 V and 5 V logic compatible I/O •...
Capacity and Random-Coding Exponents for Channel Coding with Side Information (P.moulin关于信息隐藏容量的论文...
Program to simulate Rayleigh fading using a p-th order autoregressive model AR(p) according to % B...
The Capacity of a MIMO channel with nt transmit antenna and nr recieve antenna is analyzed. The p...
化学[手册]_《化学工程师简明手册》邓忠等[p]...
海尔29F3A-P...
专辑类-机械五金类专辑-84册-3.02G 化学[手册]_《化学工程师简明手册》邓忠等[p].pdf...
[信号与系统(全美经典学习指导系列)].(美)Hwei.P.Hsu.扫描版 很清晰,经典教材...
在理论模型的基础上探讨了电子势垒的形状以及势垒形状随外加电压的变化, 并进行定量计算, 得出隧穿电压随杂质掺杂浓度的变化规律。所得结论与硅、锗p-n 结实验数据相吻合, 证明了所建立的理论模型在定量 ...