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嵌入式/单片机编程 These are P-Channel enhancement mode silicon gate power fi eld effect transistors. They are ad
These are P-Channel enhancement mode silicon gate
power &#64257 eld effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
speci&#64257 ed level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applicatio ...
技术资料 L9945
AEC-Q100 qualified
• 12 V and 24 V battery systems compliance
• 3.3 V and 5 V logic compatible I/O
• 8-channel configurable MOSFET pre-driver
– High-side (N-channel and P-channel MOS)
– Low-side (N-channel MOS)
– H-bridge (up to 2 H-bridge)
– Peak & Hold (2 loads)
• Operating battery supply ...
行业发展研究 Capacity and Random-Coding Exponents for Channel Coding with Side Information （P.moulin关于信息隐藏容量的论文
Capacity and Random-Coding Exponents
for Channel Coding with Side Information
（P.moulin关于信息隐藏容量的论文2006年）
其他 Program to simulate Rayleigh fading using a p-th order autoregressive model AR(p) according to ％ B
Program to simulate Rayleigh fading using a p-th order autoregressive model AR(p) according to
％ Baddour s work: "Autoregressive modeling for fading channel simulation"
matlab例程 The Capacity of a MIMO channel with nt transmit antenna and nr recieve antenna is analyzed. The p
The
Capacity of a MIMO channel with nt transmit antenna and nr recieve
antenna is analyzed. The power in parallel channel (after
decomposition) is distributed as water-filling algorithm
机械五金 化学[手册]_《化学工程师简明手册》邓忠等[p]
化学[手册]_《化学工程师简明手册》邓忠等[p]
技术书籍 化学[手册]_《化学工程师简明手册》邓忠等[p].pdf
专辑类-机械五金类专辑-84册-3.02G 化学[手册]_《化学工程师简明手册》邓忠等[p].pdf
教材/考试/认证 [信号与系统(全美经典学习指导系列)].(美)Hwei.P.Hsu.扫描版.rar
[信号与系统(全美经典学习指导系列)].(美)Hwei.P.Hsu.扫描版
很清晰，经典教材
模拟电子 p-n结的隧道击穿模型研究
在理论模型的基础上探讨了电子势垒的形状以及势垒形状随外加电压的变化, 并进行定量计算, 得出隧穿电压随杂质掺杂浓度的变化规律。所得结论与硅、锗p-n 结实验数据相吻合, 证明了所建立的理论模型在定量
研究p-n 结的隧道击穿中的合理性与实用性。该理论模型对研究一般材料或器件的隧道击穿具有重要的借鉴意义。
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