These are P-Channel enhancement mode silicon gate power fi eld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specifi ed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for other high-power switching devices. The high input impedance allows these types to be operated directly from integrated circuits.
标签： enhancement transistors P-Channel are
上传时间： 2017-02-17
上传用户：aeiouetla
AEC-Q100 qualified • 12 V and 24 V battery systems compliance • 3.3 V and 5 V logic compatible I/O • 8-channel configurable MOSFET pre-driver – High-side (N-channel and P-Channel MOS) – Low-side (N-channel MOS) – H-bridge (up to 2 H-bridge) – Peak & Hold (2 loads) • Operating battery supply voltage 3.8 V to 36 V • Operating VDD supply voltage 4.5 V to 5.5 V • All device pins, except the ground pins, withstand at least 40 V • Programmable gate charge/discharge currents for improving EMI behavior
标签： configurable Automotive pre-driver suitable channel systems MOSFET fully High side
上传时间： 2019-03-27
上传用户：guaixiaolong
Capacity and Random-Coding Exponents for Channel Coding with Side Information （P.moulin关于信息隐藏容量的论文2006年）
标签： Random-Coding Information Exponents Capacity
上传时间： 2013-12-19
上传用户：cc1
Program to simulate Rayleigh fading using a p-th order autoregressive model AR(p) according to ％ Baddour s work: "Autoregressive modeling for fading channel simulation"
标签： autoregressive according simulate Rayleigh
上传时间： 2013-12-02
上传用户：tb_6877751
The Capacity of a MIMO channel with nt transmit antenna and nr recieve antenna is analyzed. The power in parallel channel (after decomposition) is distributed as water-filling algorithm
标签： antenna The Capacity analyzed
上传时间： 2016-02-01
上传用户：225588
化学[手册]_《化学工程师简明手册》邓忠等[p]
上传时间： 2013-04-15
上传用户：eeworm
海尔29F3A-P
上传时间： 2013-06-19
上传用户：eeworm
专辑类-机械五金类专辑-84册-3.02G 化学[手册]_《化学工程师简明手册》邓忠等[p].pdf
上传时间： 2013-07-28
上传用户：lifangyuan12
[信号与系统(全美经典学习指导系列)].(美)Hwei.P.Hsu.扫描版 很清晰，经典教材
上传时间： 2013-04-24
上传用户：Pzj
在理论模型的基础上探讨了电子势垒的形状以及势垒形状随外加电压的变化, 并进行定量计算, 得出隧穿电压随杂质掺杂浓度的变化规律。所得结论与硅、锗p-n 结实验数据相吻合, 证明了所建立的理论模型在定量 研究p-n 结的隧道击穿中的合理性与实用性。该理论模型对研究一般材料或器件的隧道击穿具有重要的借鉴意义。
上传时间： 2013-10-31
上传用户：summery
