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MOS-Gate

  • BP8009 高集成度单火线智能面板电源芯片手册

    BP8009 是一款高集成度单火线智能面板电源芯片,提供了Relay On(灯亮)供电,具有AC 电压过零检测功能,可以在母线电压低时通、断Relay,来延长Relay 寿命。BP8009 芯片具有高集成度的Relay On 供电,仅需极少的外围元器件,就可以实现MOS 切相供电,极大的节约了系统成本和体积。BP8009 采用SOP-8 封装。

    标签: bp8009 智能面板 电源

    上传时间: 2022-03-04

    上传用户:XuVshu

  • ST7789V IC规格书

     Single chip TFT-LCD Controller/Driver with On-chip Frame Memory (FM) Display Resolution: 240*RGB (H) *320(V) Frame Memory Size: 240 x 320 x 18-bit = 1,382,400 bits LCD Driver Output Circuits- Source Outputs: 240 RGB Channels- Gate Outputs: 320 Channels- Common Electrode Output Display Colors (Color Mode)- Full Color: 262K, RGB=(666) max., Idle Mode Off- Color Reduce: 8-color, RGB=(111), Idle Mode On Programmable Pixel Color Format (Color Depth) for Various Display Data input Format- 12-bit/pixel: RGB=(444)- 16-bit/pixel: RGB=(565)- 18-bit/pixel: RGB=(666) MCU Interface- Parallel 8080-series MCU Interface (8-bit, 9-bit, 16-bit & 18-bit)- 6/16/18 RGB Interface(VSYNC, HSYNC, DOTCLK, ENABLE, DB[17:0])- Serial Peripheral Interface(SPI Interface)- VSYNC Interface

    标签: st7789v LCD

    上传时间: 2022-03-04

    上传用户:

  • 支持15W 快充的2 节 3 节串联锂电池升压充电IC

    IP2326 集成功率MOS,采用同步开关架构,使其在应用时仅需极少的外围器件,并有效减小整体方案的尺寸,降低BOM 成本。

    标签: 锂电池 充电IC

    上传时间: 2022-03-05

    上传用户:trh505

  • MOS管的米勒效应-讲的很详细

    MOSFET的栅极驱动过程,可以简单的理解为驱动源对MOSFET的输入电容(主要是栅源极电容Cgs)的充放电过程;当Cgs达到门槛电压之后, MOSFET就会进入开通状态;当MOSFET开通后,Vds开始下降,Id开始上升,此时MOSFET进入饱和区;但由于米勒效应,Vgs会持续一段时间不再上升,此时Id已经达到最大,而Vds还在继续下降,直到米勒电容充满电,Vgs又上升到驱动电压的值,此时MOSFET进入电阻区,此时Vds彻底降下来,开通结束。由于米勒电容阻止了Vgs的上升,从而也就阻止了Vds的下降,这样就会使损耗的时间加长。(Vgs上升,则导通电阻下降,从而Vds下降)

    标签: MOS管

    上传时间: 2022-03-20

    上传用户:得之我幸78

  • 60W氮化镓 PD充电器工程文件

    基于氮化镓MOS的高效PD协议智能充电器,超小体积超高效率,用于手机、pad、笔记本电脑的充电。

    标签: 充电器

    上传时间: 2022-03-28

    上传用户:

  • MOSFET开关过程的研究及米勒平台振荡的抑制

    设计功率MOSFET驱动电路时需重点考虑寄生参数对电路的影响。米勒电容作为MOSFET器件的一项重要参数,在驱动电路的设计时需要重点关注。重点观察了MOSFET的开通和关断过程中栅极电压、漏源极电压和漏源极电流的变化过程,并分析了米勒电容、寄生电感等寄生参数对漏源极电压和漏源极电流的影响。分析了栅极电压在米勒平台附近产生振荡的原因,并提出了抑制措施,对功率MOSFET的驱动设计具有一定的指导意义。When designing the drive circuit of power MOSFET,the influence of parasitic parameters on the circuit should be concerned.As an important parameter of MOSFET device,Miller capacitance should be considered in the design of drive circuit.The variation of gate voltage,drain source voltage and drain source current during the turn-on and turn-off of MOSFET were observed.The influences of parasitic parameters such as Miller capacitance and parasitic inductance on drain source voltage and drain source current were analyzed.The reasons of gate voltage oscillation nearby Miller plateau were analyzed,and the restraining measures were put forward.This research was instructive for the drive design of power MOSFET.

    标签: mosfet

    上传时间: 2022-04-02

    上传用户:默默

  • 电流检测电路中运算放大器与ADC的设计

    电学中的测量技术涉及范围非常广,电流测量在电学计量中占有非常重要的位置。如何精确地进行电流测量是精密测量的一大难题。传统的电流检测电路多采用运算放大芯片与片外电流检测电路相结合的方式,电路集成度很低,需要较多的接口和资源才能完成对电路的检测。本文把所有电路部分都集成在一块芯片上,包括检测电阻,运算放大器电路及模拟转数字转换电路,从而在电路内部可以进行电流检测,使电路更好的集成化。前置电路使用二级共源共栅结构的运算放大器,减小沟道长度调制效应造成的电流误差。10位SAR ADC中采用电容驱动能力强的传输门保证了模数转化器的有效精度。比较器模块采用再生锁存器与迟滞比较器作为基础单元组合解决精密测量的问题。本设计可以作为嵌入芯片内的一小部分而检测芯片中的微小电流1mA~100mA,工作电压在1.8v左右,电流检测精度预期达到10uA的需求。The measurement technology in electricity involves a wide range,and current measurement plays a very important position in electrical measurement.How to accurately measure current is a big problem in precision measurement. The traditional current detecting circuit adopts the combination of the operational amplifier chip and theoff-chip current detecting circuit, The circuit integration is very low, and more interfaces and resources are needed tocomplete the circuit detection.This topic integrates all the circuit parts into one chip, including detection resistance, operational amplifier circuit andanalog to digital conversion circuit. Highly integrated circuit makes the external resources on the chip more intensive,so that current detection can be carried out inside the circuit, so that the circuit can be better integrated. Thefront-end circuit of this project uses two-stage cascade operational amplifier and cascade tube to reduce the currenterror caused by channel length modulation effect. In 10-bit SAR ADC, the transmission gate with strong capacitivedriving ability ensures the effective accuracy of the analog-to-digital converter. Comparator module uses regenerativelatch and hysteresis comparator as basic unit to solve the difficult problem of precision measurement. This topic can beused as a small part of the embedded chip to detect the micro-current in the chip 1 mA~100 mA, the working voltageis about 1.8v, and the current detection accuracy is expected to reach the requirement of 10 uA.

    标签: 电流检测 电路 运算放大器 adc

    上传时间: 2022-04-03

    上传用户:

  • IP2716中文资料

    IP2716是一款集成USB TYPE-C输入输出协议、USB Power Delivery(PD3.0)输入输出协议、QC3.0/2.0输出快充协议(兼容DCP识别功能,兼容BC1.2、苹果和三星手机)等多功能。高集成度与丰富功能,使其在应用时仅需极少的外围器件。如果原有的普通方案输出功率和输出电压范围满足需求,只需额外增加外扩的功率MOS就可以实现在原有方案的基础上升级为支持TYPE-C、PD3.0、QC3.0/2.0的高级快充方案。适当提升DC-DC或AC-DC元件性能,可以轻松实现最高100W(20V 5A)输出能力,为移动电源、适配器、车充提供完整的TYPE-C解决方案。

    标签: ip2716

    上传时间: 2022-04-09

    上传用户:

  • 基于DSP28335+IR2110芯片的移相全桥驱动电路设计

    为解决移相全桥电路驱动及相角控制问题,设计了一种数字控制的移相全桥驱动电路.以TPL521为光耦隔离、IR2110为栅极驱动芯片.由DSP产生PWM信号,经过光耦隔离和逻辑电路后送至IR2110进行相角控制.文章对IR2110驱动电路原理进行分析及参数进行设计,对TMS320F28335进行设置并给出部分代码.实验结果表明:通过TMS320F28335可产生的不同相角的PWM波形,满足了移相全桥对不同相角控制的要求.In order to solve the problem of phase-shifted full-bridge circuit driving and phase angle control,a digitally controlled phaseshifted full-bridge driving circuit was designed. TPL521 optocoupler isolation,IR2110 gate driver chip. PWM signals are generated by the DSP and sent to the IR2110 for phase angle control after optocoupler isolation and logic circuits. This text carries on the analysis to the principle of IR2110 drive circuit and parameter design,set up and give out some code to TMS320F28335. The experimental results show that the PWM waveforms with different phase angles generated by TMS320F28335 can meet the requirements of phase-shifted full-bridge control for different phase angles.

    标签: dsp28335 ir2110 芯片

    上传时间: 2022-05-03

    上传用户:zhanglei193

  • 数字集成电路:电路系统与设计(第二版).pdf

    《数字集成电路:电路、系统与设计(第二版) 》,电子工业出版社出版,外文书名: Digital Integrated Circuits:A Design Perspective,Second Edition,作者:简·M.拉贝艾 (Jan M.Rahaey) (作者), Anantha Chandrakasan (作者), Borivoje Nikolic (作者), 周润德 (译者), 等 (译者)。本书由美国加州大学伯克利分校Jan M. Rabaey教授等人所著。全书共12章,分为三部分: 基本单元、电路设计和系统设计。本书在对MOS器件和连线的特性做了简要的介绍之后,深入分析了数字设计的核心——反相器,并逐步将这些知识延伸到组合逻辑电路、时序逻辑电路、控制器、运算电路以及存储器这些复杂数字电路与系统的设计中。为了反映数字集成电路设计进入深亚微米领域后正在发生的深刻变化,本书以CMOS工艺的实际电路为例,讨论了深亚微米器件效应、电路最优化、互连线建模和优化、信号完整性、时序分析、时钟分配、高性能和低功耗设计、设计验证、芯片测试和可测性设计等主题,着重探讨了深亚微米数字集成电路设计所面临的挑战和启示。

    标签: 数字集成电路 电路系统

    上传时间: 2022-05-13

    上传用户:zhaiyawei