MOSFET开关过程的研究及米勒平台振荡的抑制

设计功率MOSFET驱动电路时需重点考虑寄生参数对电路的影响。米勒电容作为MOSFET器件的一项重要参数,在驱动电路的设计时需要重点关注。重点观察了MOSFET的开通和关断过程中栅极电压、漏源极电压和漏源极电流的变化过程,并分析了米勒电容、寄生电感等寄生参数对漏源极电压和漏源极电流的影响。分析了栅极电压在米勒平台附近产生振荡的原因,并提出了抑制措施,对功率MOSFET的驱动设计具有一定的指导意义。

When designing the drive circuit of power MOSFET,the influence of parasitic parameters on the circuit should be concerned.As an important parameter of MOSFET device,Miller capacitance should be considered in the design of drive circuit.The variation of gate voltage,drain source voltage and drain source current during the turn-on and turn-off of MOSFET were observed.The influences of parasitic parameters such as Miller capacitance and parasitic inductance on drain source voltage and drain source current were analyzed.The reasons of gate voltage oscillation nearby Miller plateau were analyzed,and the restraining measures were put forward.This research was instructive for the drive design of power MOSFET.

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