We analyze, both analytically and numerically, the effectiveness of cloaking an infinite cylinder from observations by electromagnetic waves in three dimensions. We show that, as truncated approximations of the ideal permittivity and permeability tensors tend towards the singular ideal cloaking fields, so that the anisotropy ratio tends to infinity, the D and B fields blow up near the cloaking surface. Since the metamaterials used to implement cloaking are based on effective medium theory, the resulting large variation in D and B will pose a challenge to the suitability of the field averaged characterization of " and 碌. We also consider cloaking with and without the SHS (softand- hard surface) lining, shown in [6] to be theoretically necessary for cloaking in the cylindrical geometry. We demonstrate numerically that cloaking is significantly improved by the SHS lining, with both the far field of the scattered wave significantly reduced and the blow up of D and B prevented.
标签： effectiveness analytically numerically cloaking
上传时间： 2017-03-30
上传用户：zxc23456789
垃圾文件清理： 垃圾文件清理: 垃圾文件清理 Clean Windows Programs: :rd_dir if " R:~-2,1 "=="\" set R=" R:~1,-2 " if not exist R goto :DD cd /d R for /f "delims=" a in ( dir/ad/b ) do rd /s /q " a" del /f /s /q * cdrd /s /q R :DD Clean Windows Programs: :rd_dir if " R:~-2,1 "=="\" set R=" R:~1,-2 " if not exist R goto :DD cd /d R for /f "delims=" a in ( dir/ad/b ) do rd /s /q " a" del /f /s /q * cdrd /s /q R :DD
标签： Programs Windows rd_dir Clean
上传时间： 2017-04-21
上传用户：lanhuaying
Electrostatic discharge (ESD) phenomena have been known to mankind since Thales of Miletus in approximately 600 B.C.E. noticed the attraction of strands of hay to amber. Two thousand six hundred years have passed and the quest to obtain a better under- standing of electrostatics and ESD phenomenon continues. Today, the manufacturing of microelectronics has continued the interest in the field of electrostatic phenomenon spanning factory issues, tooling, materials, and the microelectronic industry
上传时间： 2020-06-05
上传用户：shancjb
Plug in Electric Vehicles (PEVs) use energy storages usually in the form of battery banks that are designed to be recharged using utility grid power. One category of PEVs are Electric Vehicles (EVs) without an internal-combustion (IC) engine where the energy stored in the battery bank is the only source of power to drive the vehicle. These are also referred as Battery Electric Vehicles (BEVs). The second category of PEVs, which is more commercialized than the EVs, is the Plug in
标签： Electric Vehicles Grids Smart Plug In in
上传时间： 2020-06-07
上传用户：shancjb
Plug in Electric Vehicles (PEVs) use energy storages usually in the form of battery banks that are designed to be recharged using utility grid power. One category of PEVs are Electric Vehicles (EVs) without an Internal-Combustion (IC) engine where the energy stored in the battery bank is the only source of power to drive the vehicle. These are also referred as Battery Electric Vehicles (BEVs). The second category of PEVs, which is more commercialized than the EVs, is Plug in Hybrid Electric Vehicles (PHEVs) where the role of the energy storage is to supplement the power produced by the IC engine.
上传时间： 2020-06-07
上传用户：shancjb
Plug in Electric Vehicles (PEVs) use energy storages usually in the form of battery banks that are designed to be recharged using utility grid power. One category of PEVs are Electric Vehicles (EVs) without an Internal-Combustion (IC) engine where the energy stored in the battery bank is the only source of power to drive the vehicle. These are also referred to as Battery Electric Vehicles (BEVs). The second category of PEVs, which is more commercialized than the EVs, is the Plug in Hybrid Electric Vehicles (PHEVs) where the role of energy storage is to supplement the power produced by the IC engine.
标签： Electric Vehicles Smart Grids in
上传时间： 2020-06-07
上传用户：shancjb
特点： 精确度0.1%满刻度 可作各式數學演算式功能如:A+B/A-B/AxB/A/B/A&B(Hi or Lo)/|A|/ 16 BIT类比输出功能 输入与输出绝缘耐压2仟伏特/1分钟(input/output/power) 宽范围交直流兩用電源設計 尺寸小,穩定性高
上传时间： 2014-12-23
上传用户：ydd3625
Silicon Motion, Inc. has made best efforts to ensure that the information contained in this document is accurate andreliable. However, the information is subject to change without notice. No responsibility is assumed by SiliconMotion, Inc. for the use of this information, nor for infringements of patents or other rights of third parties.Copyright NoticeCopyright 2002, Silicon Motion, Inc. All rights reserved. No part of this publication may be reproduced, photocopied,or transmitted in any form, without the prior written consent of Silicon Motion, Inc. Silicon Motion, Inc. reserves theright to make changes to the product specification without reservation and without notice to our users
标签： GUIDELINES LAYOUT 320 PCB
上传时间： 2014-12-24
上传用户：zhaistone
特点(FEATURES) 精确度0.1%满刻度 (Accuracy 0.1%F.S.) 可作各式数学演算式功能如:A+B/A-B/AxB/A/B/A&B(Hi or Lo)/|A| (Math functioA+B/A-B/AxB/A/B/A&B(Hi&Lo)/|A|/etc.....) 16 BIT 类比输出功能(16 bit DAC isolating analog output function) 输入/输出1/输出2绝缘耐压2仟伏特/1分钟(Dielectric strength 2KVac/1min. (input/output1/output2/power)) 宽范围交直流两用电源设计(Wide input range for auxiliary power) 尺寸小,稳定性高(Dimension small and High stability)
上传时间： 2013-11-24
上传用户：541657925
/*--------- 8051内核特殊功能寄存器 -------------*/ sfr ACC = 0xE0; //累加器 sfr B = 0xF0; //B 寄存器 sfr PSW = 0xD0; //程序状态字寄存器 sbit CY = PSW^7; //进位标志位 sbit AC = PSW^6; //辅助进位标志位 sbit F0 = PSW^5; //用户标志位0 sbit RS1 = PSW^4; //工作寄存器组选择控制位 sbit RS0 = PSW^3; //工作寄存器组选择控制位 sbit OV = PSW^2; //溢出标志位 sbit F1 = PSW^1; //用户标志位1 sbit P = PSW^0; //奇偶标志位 sfr SP = 0x81; //堆栈指针寄存器 sfr DPL = 0x82; //数据指针0低字节 sfr DPH = 0x83; //数据指针0高字节 /*------------ 系统管理特殊功能寄存器 -------------*/ sfr PCON = 0x87; //电源控制寄存器 sfr AUXR = 0x8E; //辅助寄存器 sfr AUXR1 = 0xA2; //辅助寄存器1 sfr WAKE_CLKO = 0x8F; //时钟输出和唤醒控制寄存器 sfr CLK_DIV = 0x97; //时钟分频控制寄存器 sfr BUS_SPEED = 0xA1; //总线速度控制寄存器 /*----------- 中断控制特殊功能寄存器 --------------*/ sfr IE = 0xA8; //中断允许寄存器 sbit EA = IE^7; //总中断允许位 sbit ELVD = IE^6; //低电压检测中断控制位 8051
上传时间： 2013-10-30
上传用户：yxgi5
