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汇编语言 selects the mux channel and configures the MAX197 for second write pulse, written with ACQMOD = 0,
selects the mux channel and configures the MAX197 for
second write pulse, written with ACQMOD = 0, termi-
either unipolar or bipolar input range. A write pulse (WR
nates acquisition and starts conversion on WR°Os risin
+ CS) can either start an acquisition interval or initiate a
edge (Figure 6). Ho ...
汇编语言 selects the mux channel and configures the MAX197 for second write pulse, written with ACQMOD = 0,
selects the mux channel and configures the MAX197 for
second write pulse, written with ACQMOD = 0, termi-
either unipolar or bipolar input range. A write pulse (WR
nates acquisition and starts conversion on WR°Os risin
+ CS) can either start an acquisition interval or initiate a
edge (Figure 6). Ho ...
资料/手册 LM621无刷电机换向器
General Description
The LM621 is a bipolar IC designed for commutation of
brushless DC motors. The part is compatible with both
three- and four-phase motors. It can directly drive the power
switching devices used to drive the motor. The LM621 provides
an adjustable dead-time circuit to eliminate ``s ...
汇编语言 selects the mux channel and configures the MAX197 for second write pulse, written with ACQMOD = 0,
selects the mux channel and configures the MAX197 for
second write pulse, written with ACQMOD = 0, termi-
either unipolar or bipolar input range. A write pulse (WR
nates acquisition and starts conversion on WR°Os risin
is restarted.
The ACQMOD bit in the input control byte offer+ CS) can either sta ...
技术资料 LM621无刷电机换向器
General Description
The LM621 is a bipolar IC designed for commutation of
brushless DC motors. The part is compatible with both
three- and four-phase motors. It can directly drive the power
switching devices used to drive the motor. The LM621 provides
an adjustable dead-time circuit to eliminate ``s ...
模拟电子 COOLMOS全面认识
Recently a new technology for high voltage Power MOSFETshas been introduced – the CoolMOS™ . Based on thenew device concept of charge compensation the RDS(on) areaproduct for e.g. 600V transistors has been reduced by afactor of 5. The devices show no bipolar current contributionlike th ...
技术资料 单相全桥SPWM逆变器的研究
建立了单相全桥电压型SPWM（Sinusoidal Pulse-width modulation，正弦脉宽调制）逆变器的数学模型，分析了设置死区时系统中IGBT(Insulated –Gate Bipolar Transistor，绝缘栅双极晶体管)的通断状态，用MATLAB/Simulink中的基础模块模拟逆变器的工作状态、死区效应、死区补偿和控制系统，用数学分析和实验波形对仿真结果进 ...
技术书籍 IGBT模块系列
IGBT(Insulated Gate Bipolar Transistor)，绝缘栅双极型晶体管，是由BJT(双极型三极管)和MOS(绝缘栅型场效应管)组成的复合全控型电压驱动式功率半导体器件, 兼有MOSFET的高输入阻抗和GTR的低导通压降两方面的优点。GTR饱和压降低，载流密度大，但驱动电流较大;MOSFET驱动功率很小，开关速度快，但导通压降大，载流密度小 ...
模拟电子 低噪声放大器(LNA)
LNA的功能和指标二端口网络的噪声系数Bipolar LNAMOS LNA非准静态(NQS)模型和栅极感应噪声CMOS最小噪声系数和最佳噪声匹配参考文献LNA 的功能和指标• 第一级有源电路，其噪声、非线性、匹配等性能对整个接收机至关重要• 主要指标– 噪声系数(NF)取决于系统要求，可从1 dB 以下到好几个dB， NF与工作点有关– 增 ...
教程资料 HDB3编解码器设计
HDB3(High Density Bipolar三阶高密度双极性)码是在AMI码的基础上改进的一种双极性归零码，它除具有AMI码功率谱中无直流分量，可进行差错自检等优点外，还克服了AMI码当信息中出现连“0”码时定时提取困难的缺点，而且HDB3码频谱能量主要集中在基波频率以下，占用频带较窄，是ITU-TG.703推荐的PCM基群、二次群和 ...