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嵌入式/单片机编程 These are P-Channel enhancement mode silicon gate power fi eld effect transistors. They are ad
These are P-Channel enhancement mode silicon gate
power &#64257 eld effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
speci&#64257 ed level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applicatio ...
电源技术 电平转换控制功率MOSFET
Abstract: Some power architectures require the power supply sequencer (or system manager) to controldownstream power MOSFETs to allow power to flow into branch circuits. This application note explains howsystem power sequencing and level shifting can be accomplished using a low-voltage system mana ...
技术资料 具有过流和过压关断功能的汽车类电池反向保护参考设计
The PMP9498 Reference Design is a complete automotive input protection solution which features zeroIq reverse polarity protection, load switch capability, over-voltage protection, and over-current protection.
The design utilizes the LM74610 Zero-Iq Smart Diode controller paired with the LM9061 High- ...
电源技术 DN387 级联7A点的负载单片降压转换器
 
Easy-to-use and compact point-of-load power suppliesare necessary in systems with widely distributed, highcurrent, low voltage loads. The LTC®3415 provides acompact, simple and versatile solution. It includes a pairof integrated complementary power MOSFETs (32mΩtop and 25m&Omega ...
技术资料 IX6R11
The IX6R11 Bridge Driver for N-channel MOSFETs and IGBTs
with a high side and low side output, whose input signals
reference the low side. The High Side driver can control a
MOSFET or IGBT connected to a positive buss voltage up to
650V. The logic input stages are compatible with TTL or
CMOS, have b ...
技术资料 GL823K 原理图
The GL823K integrates a high speed 8051 microprocessor and a high efficiency hardware engine for the best data transfer performance between USB and flash card interfaces. Its pin assignment design fits to card sockets to provide easier PCB layout. Inside the chip, it integrates 5V to 3.3V regulator, ...
技术资料 L6470Demo程序
STM32F驱动L6470   ■ Operating voltage: 8 - 45 V■ 7.0 A out peak current (3.0 A r.m.s.)■ Low RDS(on) Power MOSFETs■ Programmable speed profile and positioning■ Programmable power MOS slew rate■ Up to 1/128 microstepping■ Sensorless stall detection■ SPI interface■ Low quiescent and ...
技术资料 8205A8_2.0.pdf规格书下载
The PW8205A8TS is the highest performance trench N-ch MOSFETs with extreme high cell density,which provide excellent RDSON and gate charge for most of the small power switching and loadswitch applications. The meet the RoHS and Product requirement with full function reliabilityapproved .
技术资料 PW2312_2.0.pdf规格书下载
The PW2312 is a high frequency, synchronous, rectified, step-down, switch-mode converter withinternal power MOSFETs. It offers a very compact solution to achieve a 1.5A peak output currentover a wide input supply range, with excellent load and line regulation.The PW2312 requires a minimal number of ...
技术资料 TMC5160步进驱动开发板电路图
TMC5160将强大的步进电机驱动器和运动控制器集成在一块芯片上，将数字信息直接转换为平滑，精确，可靠的物理运动。外扩N沟道MOSFETs，每个线圈的电机电流可达20A，最大电压60V DC；使用起来非常简单，只需要目标位置即可。所有步进电机逻辑都在TMC5160内部运行 - 当驱动NEMA17到NEMA34和更大的电机时，不需要软件。通过行业 ...