⭐ 欢迎来到虫虫下载站! | 📦 资源下载 📁 资源专辑 ℹ️ 关于我们
⭐ 虫虫下载站

📄 t26a.ibs

📁 ddr sdram 的控制代码
💻 IBS
📖 第 1 页 / 共 5 页
字号:
|***************************************************************************
| t26a.ibs * IBIS 4.0Model
| 256Mb x16 DDR SDRAM - Die Revision "F"
| Valid for DDR1-266/333/400 operation 
|
| Models *_333 are applicable for speed grade 266/333 Mbps
| Models *_400 are applicable for speed grade 400 Mbps
|
| Part Number      VDD/VDDQ            Architecture       Package
| MT46V16M16TG     2.5V/2.5V           16 Meg x 16        66-pin TSOP
| MT46V16M16FG     2.5V/2.5V           16 Meg x 16        60-ball FBGA
|***************************************************************************
|
[IBIS Ver]    4.0
[File name]   t26a.ibs
[File rev]    2.1
[Date]        03/14/2007
[Source]      From silicon level SPICE model at Micron Technology, Inc.
                  Micron Technology, Inc.
                  8000 S. Federal Way
                  P.O. Box 6, M/S: 01-711
                  Boise, ID 83707-0006
              For support e-mail modelsupport@micron.com 
|
[Notes]       Model Revision History:
              Rev 1.0: 03/24/2003          
                  - initial file creation
              Rev 2.0: 06/02/2004          
                  - removed x4 and x8 packages from the model
                  - all models matched to latest silicon measurements
                  - typ temperature changed from 25C to 40C
                  - C_comp values updated for all models
                  - added Vinl and Vinh corners to all models
              Rev 2.1: 03/14/2007
                - added separate models for Clock and A12 signals
                - updated all models to current design revision
                - updated IBIS version to 4.0
                - models for 266/333/400 Mbps included in the same file
                - updated c_comp for input models
                - added [receiver threshold] and overshoot/undershoot parameters
                - IBIS spec does not support [receiver thresholds] declarations
                for multiple differential models (i.e CLK), so they are commented
                in this file. User may uncomment one of the [receiver thresholds]
                related to either CLK_333 or CLK_400 as per requirement
|
|IQ SUMMARY Overall Quality of component and models Level 2b
|See Micron IBIS Model Quality Report for full IQ SUMMARY
|                
[Disclaimer]  This software code and all associated documentation, comments
              or other information (collectively "Software") is provided
              "AS IS" without warranty of any kind. MICRON TECHNOLOGY, INC.
              ("MTI") EXPRESSLY DISCLAIMS ALL WARRANTIES EXPRESS OR IMPLIED,
              INCLUDING BUT NOT LIMITED TO, NONINFRINGEMENT OF THIRD PARTY
              RIGHTS, AND ANY IMPLIED WARRANTIES OF MERCHANTABILITY OR
              FITNESS FOR ANY PARTICULAR PURPOSE. MTI DOES NOT WARRANT THAT 
              THE SOFTWARE WILL MEET YOUR REQUIREMENTS, OR THAT THE 
              OPERATION OF THE SOFTWARE WILL BE UNINTERRUPTED OR ERROR-FREE. 
              FURTHERMORE, MTI DOES NOT MAKE ANY REPRESENTATIONS REGARDING
              THE USE OR THE RESULTS OF THE USE OF THE SOFTWARE IN TERMS OF
              ITS CORRECTNESS, ACCURACY, RELIABILITY, OR OTHERWISE. THE
              ENTIRE RISK ARISING OUT OF USE OR PERFORMANCE OF THE SOFTWARE
              REMAINS WITH YOU. IN NO EVENT SHALL MTI, ITS AFFILIATED
              COMPANIES OR THEIR SUPPLIERS BE LIABLE FOR ANY DIRECT,
              INDIRECT, CONSEQUENTIAL, INCIDENTAL, OR SPECIAL DAMAGES
              (INCLUDING, WITHOUT LIMITATION, DAMAGES FOR LOSS OF PROFITS,
              BUSINESS INTERRUPTION, OR LOSS OF INFORMATION) ARISING OUT OF
              YOUR USE OF OR INABILITY TO USE THE SOFTWARE, EVEN IF MTI HAS
              BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES. Because some
              jurisdictions prohibit the exclusion or limitation of 
              liability for consequential or incidental damages, the above
              limitation may not apply to you.
|
[Copyright]   Copyright 2007 Micron Technology, Inc. All Rights Reserved.
|
|***************************************************************************
|                       COMPONENT: MT46V16M16TG DDR SDRAM
|***************************************************************************
|
[Component]      MT46V16M16TG
[Manufacturer]   Micron Technology Inc.
[Package]        | 66-pin TSOP
|variable              typ          min          max
R_pkg                  80.8m        66.8m        101.6m
L_pkg                  5.40nH       4.27nH       6.68nH
C_pkg                  1.06pF       0.72pF       1.32pF                     
|
|***************************************************************************
|
[Pin] signal_name   model_name   R_pin     L_pin     C_pin 
|                
1     VDD           POWER         67.4m    4.79nH    1.85pF
2     DQ0           DQ            87.5m    6.59nH    1.29pF
3     VDDQ          POWER         88.4m    6.53nH    1.30pF
4     DQ1           DQ            90.6m    6.46nH    1.19pF
5     DQ2           DQ            96.4m    6.21nH    1.10pF
6     VSSQ          GND          103.1m    6.28nH    NA
7     DQ3           DQ           101.6m    5.50nH    1.13pF
8     DQ4           DQ            94.2m    5.19nH    1.10pF
9     VDDQ          POWER         84.9m    5.22nH    1.04pF
10    DQ5           DQ            88.7m    5.01nH    1.00pF
11    DQ6           DQ            87.5m    5.12nH    0.97pF
12    VSSQ          GND           75.2m    4.56nH    NA
13    DQ7           DQ            72.8m    4.61nH    0.89pF
14    NC            NC                                  
15    VDDQ          POWER         76.9m    4.51nH    0.81pF
16    LDQS          DQ            72.1m    4.46nH    0.78pF
17    NC            NC                                
18    VDD           POWER         58.0m    3.85nH    1.13pF
19    DNU           NC                                
20    LDM           DM            70.3m    4.57nH    0.83pF
21    WE#           IN            69.2m    4.30nH    0.86pF
22    CAS#          IN            73.0m    4.76nH    0.88pF
23    RAS#          IN            75.0m    4.78nH    0.91pF
24    CS#           IN            76.8m    4.56nH    0.96pF
25    NC            NC                                
26    BA0           IN            86.2m    5.03nH    1.10pF
27    BA1           IN            93.2m    5.46nH    1.13pF
28    A10           IN            85.2m    5.82nH    1.18pF
29    A0            IN            79.9m    6.23nH    1.10pF
30    A1            IN            81.2m    6.05nH    1.18pF
31    A2            IN            86.4m    6.38nH    1.32pF
32    A3            IN            82.1m    6.35nH    1.26pF
33    VDD           POWER         86.9m    5.00nH    1.85pF
34    VSS           GND           64.1m    4.92nH    NA
35    A4            IN            82.1m    6.65nH    1.27pF
36    A5            IN            86.4m    6.68nH    1.32pF
37    A6            IN            81.2m    6.35nH    1.18pF
38    A7            IN            79.9m    6.53nH    1.09pF
39    A8            IN            80.7m    5.94nH    1.18pF
40    A9            IN            80.0m    5.52nH    1.12pF
41    A11           IN            80.8m    5.36nH    1.09pF
42    A12           IN2           77.4m    4.61nH    1.05pF
43    NC            NC                                   
44    CKE           IN            72.7m    4.68nH    0.91pF
45    CK            CLK           71.2m    4.70nH    0.88pF
46    CK#           CLK           68.9m    4.27nH    0.86pF
47    UDM           DM            68.8m    4.32nH    0.82pF
48    VSS           GND           61.1m    3.91nH    NA
49    VREF          POWER         63.7m    3.83nH    0.75pF
50    DNU           NC                                   
51    UDQS          DQ            66.8m    4.35nH    0.72pF
52    VSSQ          GND           68.7m    4.45nH    NA
53    NC            NC                                   
54    DQ8           DQ            72.2m    4.49nH    0.91pF
55    VDDQ          POWER         72.3m    4.45nH    0.93pF
56    DQ9           DQ            75.9m    4.88nH    0.97pF
57    DQ10          DQ            76.4m    4.89nH    1.00pF
58    VSSQ          GND           80.4m    5.21nH    NA
59    DQ11          DQ            86.0m    5.03nH    1.11pF
60    DQ12          DQ            86.5m    5.26nH    1.14pF
61    VDDQ          POWER         87.4m    5.90nH    1.16pF
62    DQ13          DQ            86.6m    5.89nH    1.10pF
63    DQ14          DQ            78.2m    6.23nH    1.21pF
64    VSSQ          GND           84.5m    6.21nH    NA
65    DQ15          DQ            84.8m    6.65nH    1.31pF
66    VSS           GND           70.1m    5.65nH    NA
|
|**********************DIFF PIN*********************************************
[Diff_pin]     inv_pin     vdiff    tdelay_typ    tdelay_min   tdelay_max
|
    45           46        .360V      0ns             NA           NA
|
|***************************************************************************
|                       COMPONENT: MT46V16M16FG DDR SDRAM
|***************************************************************************
|
[Component]      MT46V16M16FG
[Manufacturer]   Micron Technology Inc.
[Package]        | 60-ball FBGA
|variable              typ          min          max
R_pkg                  77.8m        42.3m        125.5m
L_pkg                  2.57nH       1.29nH       4.29nH
C_pkg                  0.57pF       0.29pF       0.87pF                    
|
|***************************************************************************
|
[Pin] signal_name   model_name   R_pin     L_pin     C_pin 
|                       
A1    VSSQ          GND           64.3m    2.19nH    NA
A2    DQ15          DQ           122.8m    4.29nH    0.87pF
A3    VSS           GND           60.0m    2.34nH    NA
A7    VDD           POWER         92.0m    2.80nH    0.66pF
A8    DQ0           DQ           109.5m    3.84nH    0.77pF
A9    VDDQ          POWER        124.2m    3.92nH    0.99pF
B1    DQ14          DQ            46.5m    1.46nH    0.34pF
B2    VDDQ          POWER        115.9m    3.69nH    0.87pF
B3    DQ13          DQ            74.2m    2.64nH    0.56pF
B7    DQ2           DQ            92.1m    3.21nH    0.67pF
B8    VSSQ          GND          102.9m    3.19nH    NA
B9    DQ1           DQ            48.3m    1.46nH    0.36pF
C1    DQ12          DQ            45.5m    1.38nH    0.35pF
C2    VSSQ          GND          110.5m    3.59nH    NA
C3    DQ11          DQ            74.9m    2.58nH    0.57pF
C7    DQ4           DQ            76.9m    2.80nH    0.57pF
C8    VDDQ          POWER        121.4m    3.89nH    0.91pF
C9    DQ3           DQ            77.3m    2.32nH    0.55pF
D1    DQ10          DQ            42.3m    1.29nH    0.32pF
D2    VDDQ          POWER         70.6m    2.33nH    0.55pF
D3    DQ9           DQ            91.8m    3.00nH    0.72pF

⌨️ 快捷键说明

复制代码 Ctrl + C
搜索代码 Ctrl + F
全屏模式 F11
切换主题 Ctrl + Shift + D
显示快捷键 ?
增大字号 Ctrl + =
减小字号 Ctrl + -