📄 test
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KLMC SIMULATION OF CU THIN FILM GROWTH
ON CU
-- by using the code version 1.1 --
by Zhiyong Wang, Youhong Li and James B. Adams at Arizona State University
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The Simulation Began at: 11: 6:56. 0 on 5/ 9/2002
The Simulation End at: 11: 8:23. 0 on 5/ 9/2002
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The Simulation Conditions Are: (AE --- activation energy)
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The AE for the diffusion of an isolated adatom is .50 eV
The AE for the diffusion of a dimer is .47 eV
The AE for the diffusion of ledge adatom along ledge is .30 eV
The hopping rate of the isolated adatom is 79629.700000
The hopping rate of the ledge adatom is 1.824134E+08
The hopping rate of the dimer is 165190.800000
The possible motions of an isolated adatom are 4
The possible motions of a dimer are 8
The possible motions of a ledge adatom are 2
The prefactor for the diffusion of isolated adatom is 2.000000E+13 Hz
The prefactor for the diffusion of ledge adatom is 2.000000E+13 Hz
The prefactor for the diffusion of dimer is 1.300000E+13 Hz
The deposition flux is 200.000000 monolayer/sec
The deposition rate is 8000000 atoms/sec
The simulation grid is 200* 200 (atoms * atoms)
You want to deposit 2.500000E-01monolayer(s) of atoms
The simulation temperature is 300.000000 K
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Some Useful Information Got From The Simulation:
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The actual simulation time is 1.250576E-03 sec
The total simulation steps are 11586941
The initial number of atoms on the surface is 0
The total number of deposited atoms is 10000
The total number of atoms on the surface is 10000
The total coverage is 2.500000E-01
The total number of isolated adatoms is 313
The total number of dimer atoms is 82
The total number of ledge adatoms is 34
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You can visualize the film structure by XMOL, the file is: test.xyz
You can also visualize the film structure by RASMOL, the file is: test2.pdb
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