资源详细信息
ESD-Phenomena-and-the-Reliability - 资源详细说明
As we enter the next millennium, there are clear technological patterns. First, the
electronic industry continues to scale microelectronic structures to achieve faster
devices, new devices, or more per unit area. Secondly, electrostatic charge, electrostatic
discharge (ESD), electrical overstress (EOS) and electromagnetic emissions (EMI)
continue to be a threat to these scaled structures. This dichotomy presents a dilemma
for the scaling of semiconductor technologies and a future threat to new technologies.
Technological advancements, material changes, design techniques, and simulation can
fend off this growing concern – but to maintain this ever-threatening challenge, one must
continue to establish research and education in this issue.
electronic industry continues to scale microelectronic structures to achieve faster
devices, new devices, or more per unit area. Secondly, electrostatic charge, electrostatic
discharge (ESD), electrical overstress (EOS) and electromagnetic emissions (EMI)
continue to be a threat to these scaled structures. This dichotomy presents a dilemma
for the scaling of semiconductor technologies and a future threat to new technologies.
Technological advancements, material changes, design techniques, and simulation can
fend off this growing concern – but to maintain this ever-threatening challenge, one must
continue to establish research and education in this issue.
立即下载 ESD-Phenomena-and-the-Reliabil
提示：下载后请用压缩软件解压，推荐使用 WinRAR 或 7-Zip
下载说明与使用指南
下载说明
- 本资源需消耗 2积分
- 24小时内重复下载不扣分
- 支持断点续传功能
- 资源永久有效可用
使用说明
- 下载后使用解压软件解压
- 推荐使用 WinRAR 或 7-Zip
- 如有密码请查看资源说明
- 解压后即可正常使用
积分获取方式
- 上传优质资源获得积分
- 每日签到免费领取积分
- 邀请好友注册获得奖励
- 查看详情 →