LAYOUT REPORT .............. 1 目錄.................. 1 1. PCB LAYOUT 術語解釋(TERMS)......... 2 2. Test Point : ATE 測試點供工廠ICT 測試治具使用............ 2 3. 基準點 (光學點) -for SMD:........... 4 4. 標記 (LABEL ING)......... 5 5. VIA hole PAD................. 5 6. PCB Layer 排列方式...... 5 7.零件佈置注意事項 (PLACEMENT NOTES)............... 5 8. PCB LAYOUT 設計............ 6 9. Transmission Line ( 傳輸線 )..... 8 10.General Guidelines – 跨Plane.. 8 11. General Guidelines – 繞線....... 9 12. General Guidelines – Damping Resistor. 10 13. General Guidelines - RJ45 to Transformer................. 10 14. Clock Routing Guideline........... 12 15. OSC & CRYSTAL Guideline........... 12 16. CPU
上传时间： 2013-10-29
上传用户：1234xhb
Every day, patches are created to cover up security holes in software applications and operating systems. But by the time you download a patch, it could be too late. A hacker may have already taken advantage of the hole and wreaked havoc on your system. This innovative book will help you stay one step ahead. It gives you the tools to discover vulnerabilities in C-language-based software, exploit the vulnerabilities you find, and prevent new security holes from occurring.
标签： applications operating security software
上传时间： 2015-11-01
上传用户：fhzm5658
AC220V转DC5V(3W )-RS485电路-继电器驱动板ALTIUM设计硬件原理图+PCB+AD集成封装库，2层板设计，大小为59x62mm，Altium Designer 设计的工程文件，包括完整的原理图及PCB文件，可以用Altium(AD)软件打开或修改，可作为你产品设计的参考。集成封装器件型号列表：Library Component Count : 20Name Description----------------------------------------------------------------------------------------------------CAP1 GRM21BR61A106KE19L，106,10μF,±10%,10V,X5R,0805,muRata,RoHSCON2 ConnectorCON3 ConnectorCON4 ConnectorDIODE ZENER2 SMBJ6.5CA,DO-214AA,君耀,RoHSDIODE1 1N4148,SOD-323,长电,RoHSFUSE1 MST2.50,T2.5A,250V,长方形,CONQUER,RoHSHEADER 5X2 hole - 不上螺丝 MARKER MAX485CSA SP485REN-L,SO-8,EXAR,RoHSNPN-1 9013,SOT-23,长电,RoHSRELAY-SPST HF46F/005-HS1,20.5×7.2×15.3mm,宏发,RoHSRES-PTC NTC,5D-9,DIP,RoHSRES2 10Ω,0603,*,RoHSRES4 471KD10,直插,君耀,RoHSZLGZY GAOYA ZY0IFBxxP-3W ZY0IGB05P-3W V1.00ZY_ESD-MARK
上传时间： 2021-12-21
上传用户：aben
le flows through MOS channel while Ih flows across PNP transistor Ih= a/(1-a) le, IE-le+lh=1/(1-a)' le Since IGBT has a long base PNP, a is mainly determined by ar si0 2ar= 1/cosh(1/La), La: ambipolar diff length a-0.5 (typical value)p MOSFET channel current (saturation), le=U"Cox"W(2"Lch)"(Vc-Vth)le Thus, saturated collector current Ic, sat=1/(1-a)"le=-1/(1-a)"UCox"W/(2Lch)"(Vo-Vth)2Also, transconductance gm, gm= 1/(1-a)"u' Cox W/Lch*(Vo-Vth)Turn-On1. Inversion layer is formed when Vge>Vth2. Apply positive collector bias, +Vce3. Electrons flow from N+ emitter to N-drift layer providing the base current for the PNP transistor4. Since J1 is forward blased, hole carriers are injected from the collector (acts as an emitter).5. Injected hole carriers exceed the doping level of N-drift region (conductivity modulation). Turn-Off1. Remove gate bias (discharge gate)2. Cut off electron current (base current, le, of pnp transistor)
标签： igbt
上传时间： 2022-06-20
上传用户：wangshoupeng199
