As we enter the next millennium, there are clear technological patterns. First, the electronic industry continues to scale microelectronic structures to achieve faster devices, new devices, or more per unit area. Secondly, electrostatic charge, electrostatic discharge (ESD), electrical overstress (EOS) and electromagnetic emissions (EMI) continue to be a threat to these scaled structures. This dichotomy presents a dilemma for the scaling of semiconductor technologies and a future threat to new technologies. Technological advancements, material changes, design techniques, and simulation can fend off this growing concern – but to maintain this ever-threatening challenge, one must continue to establish research and education in this issue.
标签： ESD-Phenomena-and-the-Reliability
上传时间： 2020-06-05
上传用户：shancjb
)Armature windings of the electric motor for NO.2 deck cargo winch found low insulation. Windings re-winded,painted and baked dry. (2) NO.1 main air compressor failed to build up pressure.The machine disassembled, cleaned and inspected. The discharge valve plate found broken. The valve palte renewed and running trials tested after being reassembled.
标签： 答案
上传时间： 2020-07-14
上传用户：
以AT89S52单片机为控制核心,采用电容降压技术,Buck电路拓扑,PWM驱动模块和功率器件散热设计,通过高速的数据采集、主功率输入输出模块和控制模块,设计一种新型智能车载充电器.在充电过程中,通过负脉冲瞬间放电实现对铅酸蓄电池的再生修复,提高电池的有效容量,延长使用寿命.该充电器体积小、速度快、效率高、可靠性好.With AT89S52 single chip computer as the control core,a new type of intelligent car-carried charger was designed by using capacitance step-down technology,Buck circuit topology,PWM driving module and power device heat dissipation design,through high-speed data acquisition,main power input and output module and control module.In the charging process,the regeneration and repair of lead-acid batteries are realized by instantaneous discharge of negative pulse,which improves the effective capacity of batteries and prolongs their service life.The charger has the advantages of small size,fast speed,high efficiency and good reliability.
标签： 车载充电器
上传时间： 2022-03-27
上传用户：
静电放电（Electrostatic discharge，ESD）是构成集成电路可靠性的主要因素之一，存在于生产到使用的每一个环节，并成为开发新一代工艺技术的难点之一，近年来，对ESD的研究也因而越来越受到重视，仿真工具在ESD领域的应用使得ESD防护的研究变得更为便利，可大幅缩短研发周期然而，由于ESD现象复杂的物理机制，极端的电场及温度条件，以及ESD仿真中频繁的不收敛现象，都使得FSD的仿真变得极为困难本文详细阐述了ESD的来源、造成的危害以及如何测试集成电路的防静电冲击能力，并基于 Sentaurus软件，对ESD防护器件展开了的分析、研究，内容包括1）掌握ESD保护的基本理论、测试方法和防护机理2）研究了工艺仿真流程的步骤以及网格定义在工艺仿真中的重要性，并对网格定义的方法进行了探讨3）硏究了器件仿真流程以及器件仿真中的物理模型和模型函数，并对描述同一物理机制的的各种不同模型展开对比分析.主要包括传输方程模型、能帶模型、各种迁移率退化模型、雪崩离化模型和复合模型4）研究了双极型晶体管和可控硅（Silicon Controlled rectifier，SCR）防护器件的仿真，并通过对仿真结果的分析，研究了ESD保护器件在ESD应力作用下的工作机理关键词：静电放电；网格；器件仿真；双极型晶体管；可控硅
上传时间： 2022-03-30
上传用户：
INTERNATIONAL STANDARD NORME INTERNATIONALEPart 4-2: Testing and measurement techniques – Electrostatic discharge immunity test.About the IEC The International Electrotechnical Commission (IEC) is the leading global organization that prepares and publishes International Standards for all electrical, electronic and related technologies.About IEC publications The technical content of IEC publications is kept under constant review by the IEC. Please make sure that you have the latest edition, a corrigenda or an amendment might have been published.
标签： IEC
上传时间： 2022-04-19
上传用户：fliang
应用无迹卡尔曼滤波算法（UKF）进行锂电池的SOC估计,采用Thevenin二阶RC等效电路模型,对HPPC电池脉冲充放电实验数据进行Matlab处理,得到较为准确的模型.通过在Matlab中编写算法程序,对不同工况的估计值与实际值进行误差估算及对比分析,通过此算法进行SOC估计,得到该算法可有效降低系统误差并纠正SOC的初值偏差.The non trace Calman filter （UKF） is applied to the SOC estimation of lithium battery. The Thevenin two order RC equivalent circuit model is used to process the HPPC battery pulse charge discharge experimental data by Matlab processing, and a more accurate model is obtained. By writing algorithm program in Matlab, the error estimation and comparison analysis of the estimated value and actual value of different states are carried out, and the SOC estimation is carried out by this algorithm. The algorithm can effectively reduce the system error and correct the initial value deviation of the SOC.
标签： 卡尔曼滤波
上传时间： 2022-05-03
上传用户：默默
le flows through MOS channel while Ih flows across PNP transistor Ih= a/(1-a) le, IE-le+lh=1/(1-a)' le Since IGBT has a long base PNP, a is mainly determined by ar si0 2ar= 1/cosh(1/La), La: ambipolar diff length a-0.5 (typical value)p MOSFET channel current (saturation), le=U"Cox"W(2"Lch)"(Vc-Vth)le Thus, saturated collector current Ic, sat=1/(1-a)"le=-1/(1-a)"UCox"W/(2Lch)"(Vo-Vth)2Also, transconductance gm, gm= 1/(1-a)"u' Cox W/Lch*(Vo-Vth)Turn-On1. Inversion layer is formed when Vge>Vth2. Apply positive collector bias, +Vce3. Electrons flow from N+ emitter to N-drift layer providing the base current for the PNP transistor4. Since J1 is forward blased, hole carriers are injected from the collector (acts as an emitter).5. Injected hole carriers exceed the doping level of N-drift region (conductivity modulation). Turn-Off1. Remove gate bias (discharge gate)2. Cut off electron current (base current, le, of pnp transistor)
标签： igbt
上传时间： 2022-06-20
上传用户：wangshoupeng199
