PROTECTION

共 157 篇文章
PROTECTION 相关的电子技术资料,包括技术文档、应用笔记、电路设计、代码示例等,共 157 篇文章,持续更新中。

PW3130_2.0.pdf规格书下载

<p>The PW3130 series product is a high integration solution for lithium-lion/polymer battery<br/>protection.PW3130 contains advanced power MOSFET, high-accuracy voltage detection circuits and<br/>dela

PW3400A_2.0.pdf规格书下载

<p>The PW3400A uses advanced trench technology to provide excellent RDS(ON), low gate charge and<br/>operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protectio

PW3407_2.0.pdf规格书下载

<p>The PW3407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and<br/>operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection

PW3428-2.0.pdf规格书下载

<p>The PW3428 uses advanced trench technology to provide excellent RDS(ON), low gate charge and<br/>operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection

PW3467-2.0.pdf规格书下载

<p>The PW3467 uses advanced trench technology to provide excellent RDS(ON), low gate charge and<br/>operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection

PW4554_2.0.pdf规格书下载

<p>The PW4554 is a cost-effective, fully integrated high input voltage single-cell Li-ion battery charger.<br/>The charger uses a CC/CV charge profile required by Li-ion battery. The charger accepts a

SI2302_2.0.pdf规格书下载

<p>The SI2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and<br/>operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection

HX3248C

<p>FFeeaattuurreess  Input voltage range: 2.2 to 6V &nbsp; Programmable LED Current &nbsp; Drives LEDs Up to 27V &nbsp; Switching Frequency:up to 800KHz  Wide dimming frequency range: 20KHz~ &nbs

基于TMS320F2812 光伏并网发电模拟装置PROTEL设计原理图+PCB+软件源码+WORD论

<p>基于TMS320F2812 光伏并网发电模拟装置PROTEL设计原理图+PCB+软件源码+WORD论文文档,硬件采用2层板设计,PROTEL99SE 设计的工程文件,包括完整的原理图和PCB文件,可以做为你的学习设计参考。&nbsp;</p><p><br/></p><p>摘要:本文实现了一个基于TMS320F2812 DSP芯片的光伏并网发电模拟装置,采用直流稳压源和滑动变阻器来模拟光伏电池

Computational+Intelligence

The large-scale deployment of the smart grid (SG) paradigm could play a strategic role in<br /> supporting the evolution of conventional electrical grids toward active, flexible and self-<br /> healin

Wide Area Monitoring, Protection

Today, electric power transmission systems should face many demanding chal-<br /> lenges, which include balancing between reliability, economics, environmental,<br /> and other social objectives to op

Transmission+Line+Protection

Modern power systems involve large amount of investment. An electric power<br /> system comprises of generation, transmission, and distribution of electric energy.<br /> Growth of power systems has le

Standardization+in+Smart+Grids

One of the predominant topics in the domain of the emerging Smart Grid can be<br /> seen in standardization. With the combination of existing protection and automa-<br /> tion technology with upcoming

Smart+Grids

n present power system, the engineers face variety of challenges in<br /> planning, construction and operation. In some of the problems, the engineers need<br /> to use managerial talents. In system d

Computational+Intelligence

The large-scale deployment of the smart grid (SG) paradigm could play a strategic role in<br /> supporting the evolution of conventional electrical grids toward active, flexible and self-<br /> healin

ESD+Basics

This text, ESD Basics: From Semiconductor Manufacturing to Product Use was initiated on<br /> the need to produce a text that addresses fundamentals of electrostatic discharge from the<br /> manufactu

ESD_Suggestion_for_HighSpeed_IO_Ker

Guideline Suggestion<br /> for High-Speed I/O ESD Protection<br />

ESD_protection_for_RF_and_AMS_ICs

This paper reviews key factors to practical ESD<br /> protection design for RF and analog/mixed-signal (AMS) ICs,<br /> including general challenges emerging, ESD-RFIC interactions,<br /> RF ESD desig

ESD Protection in CMOS ICs

在互補式金氧半(CMOS)積體電路中,隨著量產製程的演進,元件的尺寸已縮減到深次微<br /> 米(deep-submicron)階段,以增進積體電路(IC)的性能及運算速度,以及降低每顆晶片的製造<br /> 成本。但隨著元件尺寸的縮減,卻出現一些可靠度的問題。<br /> 在次微米技術中,為了克服所謂熱載子(Hot-Carrier)問題而發展出 LDD(Lightly-Doped Drain)

ESD Protection Device and Circuit Design

The challenges associated with the design and implementation of Electro-<br /> static Discharge (ESD) protection circuits become increasingly complex as<br /> technology is scaled well into nano-metri