The design and manufacturing of wireless radio frequency (RF) transceivers has developed rapidly in recent ten yeas due to rapid development of RF integrated circuits and the evolution of high-speed digital signal processors (DSP). Such high speed signal processors, in conjunction with the development of high resolution analog to digital converters and digital to analog converters, has made it possible for RF designers to digitize higher intermediate frequencies, thus reducing the RF section and enhancing the overall performance of the RF section.
标签： Transceivers Wireless Digital
上传时间： 2020-05-27
上传用户：shancjb
This book is intended to help electric power and telephone company personnel and individuals interested in properly protecting critical tele communications circuits and equipment located in high voltage (HV) environments and to improve service reliability while maintaining safe working conditions. Critical telecommunications circuits are often located in HV environments such as electric utility power plants, substations, cell sites on power towers, and standalone telecommuni cations facilities such as 911 call centers and mountaintop telecom munications sites.
标签： Protection Voltage High
上传时间： 2020-05-27
上传用户：shancjb
Emerging technologies such as WiFi and WiMAX are profoundly changing the landscape of wireless broadband. As we evolve into future generation wireless networks, a primary challenge is the support of high data rate, integrated multi- media type traffic over a unified platform. Due to its inherent advantages in high-speed communication, orthogonal frequency division multiplexing (OFDM) has become the modem of choice for a number of high profile wireless systems (e.g., DVB-T, WiFi, WiMAX, Ultra-wideband).
标签： OFDM-Based Broadband Networks Wireless
上传时间： 2020-05-31
上传用户：shancjb
Electrostatic discharge (ESD) is one of the most prevalent threats to the reliability of electronic components. It is an event in which a finite amount of charge is trans- ferred from one object (i.e., human body) to another (i.e., microchip). This process can result in a very high current passing through the microchip within a very short period of time, and, hence, more than 35% of chip damages can be attributed to an ESD-related event. As such, designing on-chip ESD structures to protect integrated circuits against the ESD stresses is a high priority in the semiconductor industry.
标签： Electrostatic Protection Discharge
上传时间： 2020-06-05
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In the seven years since the first edition of this book was completed, Electrostatic Discharge (ESD) phenomena in integrated circuits (IC) continues to be important as technologies shrink and the speed and size of the chips increases. The phenom- ena related to ESD events in semiconductor devices take place outside the realm of normal device operation. Hence, the physics governing this behavior are not typ- ically found in general textbooks on semiconductors.
标签： Integrated Circuits Silicon ESD In
上传时间： 2020-06-05
上传用户：shancjb
The planarization technology of Chemical-Mechanical-Polishing (CMP), used for the manufacturing of multi- level metal interconnects for high-density Integrated Circuits (IC), is also readily adaptable as an enabling technology in MicroElectroMechanical Systems (MEMS) fabrication, particularly polysilicon surface micromachining. CMP not only eases the design and manufacturability of MEMS devices by eliminating several photolithographic and film issues generated by severe topography, but also enables far greater flexibility with process complexity and associated designs. T
标签： mechanical polishing Chemical
上传时间： 2020-06-06
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The first edition as well as its forerunner of Kuffel and Abdullah published in 1970 and their translations into Japanese and Chinese languages have enjoyed wide international acceptance as basic textbooks in teaching senior under- graduate and postgraduate courses in High-Voltage Engineering. Both texts have also been extensively used by practising engineers engaged in the design and operation of high-voltage equipment. Over the years the authors have received numerous comments from the text’s users with helpful suggestions for improvements. These have been incorporated in the present edition. Major revisions and expansion of several chapters have been made to update the continued progress and developments in high-voltage engineering over the past two decades.
标签： Engineering Voltage High
上传时间： 2020-06-07
上传用户：shancjb
There have been many developments in the field of power electronics since the publication of the second edition, almost five years ago. Devices have become bigger and better - bigger silicon die, and current and voltage ratings. However, semiconductor devices have also become smaller and better, integrated circuit devices, that is. And the marriage of low power integrated circuit tecnology and high power semiconductors has resulted in benefit to both fields.
标签： Electronics Handbook Edition Power
上传时间： 2020-06-07
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The PW4556 series of devices are highly integrated Li-Ion and Li-Pol linear chargers targetedat small capacity battery for portable applications. It is a complete constant-current/ constantvoltage linear charger. No external sense resistor is needed, and no blocking diode is required dueto the internal MOSFET architecture. It can deliver up to 300mA of charge current (using a goodthermal PCB layout) with a final float voltage accuracy of ±1%. The charge voltage is fixed at 4.2V or4.35V, and the charge current can be programmed externally with a single resistor. The chargerfunction has high accuracy current and voltage regulation loops and charge termination
标签： pw4556
上传时间： 2022-02-11
上传用户：1208020161
The PW4554 is a cost-effective, fully integrated high input voltage single-cell Li-ion battery charger.The charger uses a CC/CV charge profile required by Li-ion battery. The charger accepts an inputvoltage up to 24V but is disabled when the input voltage exceeds the OVP threshold, typically 6.8V,to prevent excessive power dissipation. The 24V rating eliminates the over-voltage protection circuitrequired in a low input voltage charger
标签： pw4554
上传时间： 2022-02-11
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