代码搜索结果

#include "Key.h" void InitKey() { /* rPCONE &= ~(0x3f

Silicon Resistor * This simulation demonstrates the effects of velocity saturation at * high lateral electric fields. VPP 1 0 10v PWL 0s 0.0v 100s 10v VNN 2 0 0.0v D1 1 2 M_RES AREA=1 .MODEL M_RES

Silicon Resistor * This simulation demonstrates the effects of velocity saturation at * high lateral electric fields. VPP 1 0 10v PWL 0s 0.0v 100s 10v VNN 2 0 0.0v D1 1 2 M_RES AREA=1 .MODEL M_RES

Ex1_10.CIR - h-parameter evaluation .PARAM I1value=0mA V5value=1mV I1 0 1 AC {I1value} R10 1 0 1Tohm ; Large resistor to avoid floating node Ci 1 2 100uF RB 2 3 10kohm VB 0 3 DC 10V R1 2

#ifndef __FUNCTION_H #define __FUNCTION_H /*CAP_S0:CAP_S1 01 select 1K ref resistor*/ //CAP_S1:CAP_S0 --- 00->100R,01->1K,10->10K,11->100K #define SEL_CAP_100R IO0CLR = CAP_S1; IO0CLR = CAP_

Diode-Resistor circuit r1 2 0 1k d1 1 2 diode vcc 1 3 5v ac 0.001 sin(5 0.01 1000) distof1 0.01 distof2 0.01 vcc2 3 0 0v *.model diode D .model diode D is=1.0e-14 tt=0.1n cjo=2p *.disto dec 1 1000.0

A paralled resistor array Vin 1 0 DC 1 SIN (0 1 100MEG 1NS 0.0) AC 1 VR1 1 2 DC 0 R1 2 0 10K VR2 1 3 DC 0 R2 3 0 10K ac=5K VR3 1 4 DC 0 R3 4 0 rmodel1 L=11u W=2u ac=2.5k VR4 1 5 DC 0 R4 5 0 1