📄 sires.cir
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Silicon Resistor* This simulation demonstrates the effects of velocity saturation at* high lateral electric fields.VPP 1 0 10v PWL 0s 0.0v 100s 10vVNN 2 0 0.0v D1 1 2 M_RES AREA=1.MODEL M_RES numd level=1+ options resistor defa=1p+ x.mesh loc=0.0 num=1+ x.mesh loc=1.0 num=101+ domain num=1 material=1+ material num=1 silicon+ doping unif n.type conc=2.5e16+ models bgn srh conctau auger concmob fieldmob+ method ac=direct*.OP.DC VPP 0.0v 10.01v 0.1v*.TRAN 1s 100.001s 0s 0.2s.PRINT I(VPP).OPTION ACCT BYPASS=1 RELTOL=1e-12.END
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