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Ex4_4a.CIR - MOSFET drain characteristics vGS 1 0 0V vDS 2 0 0V M 2 1 0 0 NMOSG .MODEL NMOSG NMOS(Vto=4V Kp=0.0008ApVsq + Rd=1ohm Rg=1kohm) .DC vDS 0V 25V 0.5V vGS 0V 8V 1V .PROBE .END

Ex4_4b.CIR - MOSFET transfer characteristic vGS 1 0 0V vDS 2 0 15V M 2 1 0 0 NMOSG .MODEL NMOSG NMOS(Vto=4V Kp=0.0008ApVsq + Rd=1ohm Rg=1kohm) .DC vGS 0V 8V 0.1V .PROBE .END

* *MGDS - Mosfet Gate-Drain Short *parameter is rfault .fault mgds m short .fparam %rfault=1e-6 .connected #1 #2 #3 #4 ##m ##p Rf #1 #2 r=%rfault .endf

* *MGSS - Mosfet Gate-Source short *parameter is rfault .fault mgss m short .fparam %rfault=1e-6 .connected #1 #2 #3 #4 ##m ##p Rf #2 #3 r=%rfault .endf

** MOSFET Gain Stage (AC): Benchmarking Implementation of BSIM4 by Jane Xi 05/09/2003. M1 3 2 0 0 N1 L=0.09u W=4u Rsource 1 2 100k Rload 3 vdd 25k Vdd vdd 0 1.8 Vin 1 0 1.2 ac 0.1 .ac dec 10 100 1