ex4_4b.cir

As a consequence, more exact models of devices can be retained for analysis rather than the approxi

Ex4_4b.CIR - MOSFET transfer characteristic
vGS 1 0 0V
vDS 2 0 15V
M 2 1 0 0 NMOSG
.MODEL NMOSG NMOS(Vto=4V Kp=0.0008ApVsq
+ Rd=1ohm Rg=1kohm)
.DC vGS 0V 8V 0.1V
.PROBE
.END