mocmos.java

The ElectricTM VLSI Design System is an open-source Electronic Design Automation (EDA) system that c

		pBaseLayer.setFactoryCIFLayer("CBA");				// Pad-Frame

		// The Skill names
		metalLayers[0].setFactorySkillLayer("metal1");			// Metal-1
		metalLayers[1].setFactorySkillLayer("metal2");			// Metal-2
		metalLayers[2].setFactorySkillLayer("metal3");			// Metal-3
		metalLayers[3].setFactorySkillLayer("metal4");			// Metal-4
		metalLayers[4].setFactorySkillLayer("metal5");			// Metal-5
		metalLayers[5].setFactorySkillLayer("metal6");			// Metal-6
		poly1Layer.setFactorySkillLayer("poly");				// Polysilicon-1
		poly2_lay.setFactorySkillLayer("");					// Polysilicon-2
		activeLayers[P_TYPE].setFactorySkillLayer("aa");				// P-Active
		activeLayers[N_TYPE].setFactorySkillLayer("aa");				// N-Active
		selectLayers[P_TYPE].setFactorySkillLayer("pplus");			// P-Select
		selectLayers[N_TYPE].setFactorySkillLayer("nplus");			// N-Select
		wellLayers[P_TYPE].setFactorySkillLayer("pwell");			// P-Well
		wellLayers[N_TYPE].setFactorySkillLayer("nwell");			// N-Well
		polyCutLayer.setFactorySkillLayer("pcont");			// Poly-Cut
		activeCutLayer.setFactorySkillLayer("acont");		// Active-Cut
		viaLayers[0].setFactorySkillLayer("via");				// Via-1
		viaLayers[1].setFactorySkillLayer("via2");				// Via-2
		viaLayers[2].setFactorySkillLayer("via3");				// Via-3
		viaLayers[3].setFactorySkillLayer("via4");				// Via-4
		viaLayers[4].setFactorySkillLayer("via5");				// Via-5
		passivationLayer.setFactorySkillLayer("glasscut");	// Passivation
		transistorPolyLayer.setFactorySkillLayer("poly");	// Transistor-Poly
		polyCapLayer.setFactorySkillLayer("");				// Poly-Cap
		pActiveWellLayer.setFactorySkillLayer("aa");			// P-Active-Well
		silicideBlockLayer.setFactorySkillLayer("");	    // Silicide-Block
        thickActiveLayer.setFactorySkillLayer("");			// Thick-Active
		padFrameLayer.setFactorySkillLayer("");				// Pad-Frame

        // Logical Effort Tech-dependent settings
        setFactoryLESettings(0.167, 0.16, 0.7);
//        setGateCapacitance(0.167);
//        setWireRatio(0.16);
//        setDiffAlpha(0.7);

		// The layer distance
		// Metal values based on 18nm technology with 200nm as grid unit.
		double BULK_LAYER = 0, WELL_THICKNESS = 13; // proposed by J. Baker.
        double SELECT_THICKNESS = 5, SELECT_DISTANCE = 8; // proposed by J. Baker. Distance from BULK_LAYER
        double ACTIVE_THICKNESS = 4, ACTIVE_DISTANCE = 9; // proposed by J. Baker. Distance from BULK_LAYER
        double THICKACT_THICKNESS = 7, THICKACT_DISTANCE = 6; // values adapted after suggestions from J. Baker.
		double ILD_LAYER = 3.5; // 0.7/0.2     convertLength()
		double IMD_LAYER = 5.65; // 1.13um/0.2
		double METAL_LAYER = 2.65; // 0.53um/0.2
		wellLayers[P_TYPE].setFactory3DInfo(WELL_THICKNESS, BULK_LAYER, "NICEST", 0.8);					// P-Well
		wellLayers[N_TYPE].setFactory3DInfo(WELL_THICKNESS, BULK_LAYER, "NICEST", 0.8);					// N-Well
		selectLayers[P_TYPE].setFactory3DInfo(SELECT_THICKNESS, SELECT_DISTANCE, "SCREEN_DOOR", 0.4);				// P-Select
		selectLayers[N_TYPE].setFactory3DInfo(SELECT_THICKNESS, SELECT_DISTANCE, "SCREEN_DOOR", 0.4);				// N-Select

        activeLayers[P_TYPE].setFactory3DInfo(ACTIVE_THICKNESS, ACTIVE_DISTANCE, "NONE", 0.0);				// P-Active old values=0.17um/0.2 =
		activeLayers[N_TYPE].setFactory3DInfo(ACTIVE_THICKNESS, ACTIVE_DISTANCE, "NONE", 0.0);				// N-Active old values=0.16um/0.2
        pActiveWellLayer.setFactory3DInfo(ACTIVE_THICKNESS, ACTIVE_DISTANCE, "NONE", 0.0);			// P-Active-Well
        thickActiveLayer.setFactory3DInfo(THICKACT_THICKNESS, THICKACT_DISTANCE, "NICEST", 0.6);			// Thick Active (between select and well)

		metalLayers[0].setFactory3DInfo(METAL_LAYER, ILD_LAYER + activeLayers[P_TYPE].getDepth(), "NONE", 0.2);					// Metal-1   0.53um/0.2
		metalLayers[1].setFactory3DInfo(METAL_LAYER, IMD_LAYER + metalLayers[0].getDistance(), "NONE", 0.2);					// Metal-2
		viaLayers[0].setFactory3DInfo(metalLayers[1].getDistance()-metalLayers[0].getDepth(), metalLayers[0].getDepth(), "NONE", 0.2);					// Via-1

		metalLayers[2].setFactory3DInfo(METAL_LAYER, IMD_LAYER + metalLayers[1].getDistance(), "NONE", 0.2);					// Metal-3
		viaLayers[1].setFactory3DInfo(metalLayers[2].getDistance()-metalLayers[1].getDepth(), metalLayers[1].getDepth(), "NONE", 0.2);					// Via-2

		metalLayers[3].setFactory3DInfo(METAL_LAYER, IMD_LAYER + metalLayers[2].getDistance(), "NONE", 0.2);					// Metal-4
        viaLayers[2].setFactory3DInfo(metalLayers[3].getDistance()-metalLayers[2].getDepth(), metalLayers[2].getDepth(), "NONE", 0.2);					// Via-3

		metalLayers[4].setFactory3DInfo(METAL_LAYER, IMD_LAYER + metalLayers[3].getDistance(), "NONE", 0.2);					// Metal-5
		viaLayers[3].setFactory3DInfo(metalLayers[4].getDistance()-metalLayers[3].getDepth(), metalLayers[3].getDepth(), "NONE", 0.2);					// Via-4

		metalLayers[5].setFactory3DInfo(4.95, IMD_LAYER + metalLayers[4].getDistance(), "NONE", 0.2);					// Metal-6 0.99um/0.2
        viaLayers[4].setFactory3DInfo(metalLayers[5].getDistance()-metalLayers[4].getDepth(), metalLayers[4].getDepth(), "NONE", 0.2);					// Via-5

		double PASS_LAYER = 5; // 1um/0.2
		double PO_LAYER = 1; // 0.2/0.2
		double FOX_LAYER = 0; // since Sept 2008 1.75; // 0.35/0.2
        double FOX_LAYER_POLY2 = 2.85; // 15.85 - 13 requested by J. Baker.
        double TOX_LAYER = 0; // Very narrow thin oxide in gate

		// Poly layers
        double activeDepth = activeLayers[P_TYPE].getDepth();
        poly1Layer.setFactory3DInfo(PO_LAYER, FOX_LAYER + activeDepth, "NONE", 0.2);					// Polysilicon-1
		transistorPolyLayer.setFactory3DInfo(PO_LAYER, TOX_LAYER + activeDepth, "NONE", 0.2);			// Transistor-Poly
        poly2_lay.setFactory3DInfo(PO_LAYER, FOX_LAYER_POLY2 + activeDepth, "NONE", 0.2);					// Polysilicon-2 // on top of transistor layer?
		polyCapLayer.setFactory3DInfo(PO_LAYER, FOX_LAYER + activeDepth, "NONE", 0.2);				// Poly-Cap @TODO GVG Ask polyCap

		polyCutLayer.setFactory3DInfo(metalLayers[0].getDistance()-poly1Layer.getDepth(), poly1Layer.getDepth(), "NONE", 0.2);				// Poly-Cut between poly and metal1
		activeCutLayer.setFactory3DInfo(metalLayers[0].getDistance()-activeLayers[N_TYPE].getDepth(), activeLayers[N_TYPE].getDepth(), "NONE", 0.2);				// Active-Cut betweent active and metal1

		// Other layers
		passivationLayer.setFactory3DInfo(PASS_LAYER, metalLayers[5].getDepth(), "NONE", 0.2);			// Passivation
		silicideBlockLayer.setFactory3DInfo(0, BULK_LAYER, "NONE", 0.2);			// Silicide-Block
        padFrameLayer.setFactory3DInfo(0, passivationLayer.getDepth(), "NONE", 0.2);				// Pad-Frame

		// The Spice parasitics
		metalLayers[0].setFactoryParasitics(0.078, 0.1209, 0.1104);			// Metal-1
		metalLayers[1].setFactoryParasitics(0.078, 0.0843, 0.0974);			// Metal-2
		metalLayers[2].setFactoryParasitics(0.078, 0.0843, 0.0974);			// Metal-3
		metalLayers[3].setFactoryParasitics(0.078, 0.0843, 0.0974);			// Metal-4
		metalLayers[4].setFactoryParasitics(0.078, 0.0843, 0.0974);			// Metal-5
		metalLayers[5].setFactoryParasitics(0.036, 0.0423, 0.1273);			// Metal-6
		poly1Layer.setFactoryParasitics(6.2, 0.1467, 0.0608);			// Polysilicon-1
		poly2_lay.setFactoryParasitics(50.0, 1.0, 0);			// Polysilicon-2
		activeLayers[P_TYPE].setFactoryParasitics(2.5, 0.9, 0);			// P-Active
		activeLayers[N_TYPE].setFactoryParasitics(3.0, 0.9, 0);			// N-Active
		selectLayers[P_TYPE].setFactoryParasitics(0, 0, 0);				// P-Select
		selectLayers[N_TYPE].setFactoryParasitics(0, 0, 0);				// N-Select
		wellLayers[P_TYPE].setFactoryParasitics(0, 0, 0);				// P-Well
		wellLayers[N_TYPE].setFactoryParasitics(0, 0, 0);				// N-Well
		polyCutLayer.setFactoryParasitics(2.2, 0, 0);			// Poly-Cut
		activeCutLayer.setFactoryParasitics(2.5, 0, 0);			// Active-Cut
		viaLayers[0].setFactoryParasitics(1.0, 0, 0);				// Via-1
		viaLayers[1].setFactoryParasitics(0.9, 0, 0);				// Via-2
		viaLayers[2].setFactoryParasitics(0.8, 0, 0);				// Via-3
		viaLayers[3].setFactoryParasitics(0.8, 0, 0);				// Via-4
		viaLayers[4].setFactoryParasitics(0.8, 0, 0);				// Via-5
		passivationLayer.setFactoryParasitics(0, 0, 0);			// Passivation
		transistorPolyLayer.setFactoryParasitics(2.5, 0.09, 0);	// Transistor-Poly
		polyCapLayer.setFactoryParasitics(0, 0, 0);				// Poly-Cap
		pActiveWellLayer.setFactoryParasitics(0, 0, 0);			// P-Active-Well
		silicideBlockLayer.setFactoryParasitics(0, 0, 0);		// Silicide-Block
        thickActiveLayer.setFactoryParasitics(0, 0, 0);			// Thick-Active
		padFrameLayer.setFactoryParasitics(0, 0, 0);				// Pad-Frame

		setFactoryParasitics(4, 0.1);

		String [] headerLevel1 =
		{
			"*CMOS/BULK-NWELL (PRELIMINARY PARAMETERS)",
			".OPTIONS NOMOD DEFL=3UM DEFW=3UM DEFAD=70P DEFAS=70P LIMPTS=1000",
			"+ITL5=0 RELTOL=0.01 ABSTOL=500PA VNTOL=500UV LVLTIM=2",
			"+LVLCOD=1",
			".MODEL N NMOS LEVEL=1",
			"+KP=60E-6 VTO=0.7 GAMMA=0.3 LAMBDA=0.05 PHI=0.6",
			"+LD=0.4E-6 TOX=40E-9 CGSO=2.0E-10 CGDO=2.0E-10 CJ=.2MF/M^2",
			".MODEL P PMOS LEVEL=1",
			"+KP=20E-6 VTO=0.7 GAMMA=0.4 LAMBDA=0.05 PHI=0.6",
			"+LD=0.6E-6 TOX=40E-9 CGSO=3.0E-10 CGDO=3.0E-10 CJ=.2MF/M^2",
			".MODEL DIFFCAP D CJO=.2MF/M^2"
		};
		setSpiceHeaderLevel1(headerLevel1);
		String [] headerLevel2 =
		{
			"* MOSIS 3u CMOS PARAMS",
			".OPTIONS NOMOD DEFL=2UM DEFW=6UM DEFAD=100P DEFAS=100P",
			"+LIMPTS=1000 ITL5=0 ABSTOL=500PA VNTOL=500UV",
			"* Note that ITL5=0 sets ITL5 to infinity",
			".MODEL N NMOS LEVEL=2 LD=0.3943U TOX=502E-10",
			"+NSUB=1.22416E+16 VTO=0.756 KP=4.224E-05 GAMMA=0.9241",
			"+PHI=0.6 UO=623.661 UEXP=8.328627E-02 UCRIT=54015.0",
			"+DELTA=5.218409E-03 VMAX=50072.2 XJ=0.4U LAMBDA=2.975321E-02",
			"+NFS=4.909947E+12 NEFF=1.001E-02 NSS=0.0 TPG=1.0",
			"+RSH=20.37 CGDO=3.1E-10 CGSO=3.1E-10",
			"+CJ=3.205E-04 MJ=0.4579 CJSW=4.62E-10 MJSW=0.2955 PB=0.7",
			".MODEL P PMOS LEVEL=2 LD=0.2875U TOX=502E-10",
			"+NSUB=1.715148E+15 VTO=-0.7045 KP=1.686E-05 GAMMA=0.3459",
			"+PHI=0.6 UO=248.933 UEXP=1.02652 UCRIT=182055.0",
			"+DELTA=1.0E-06 VMAX=100000.0 XJ=0.4U LAMBDA=1.25919E-02",
			"+NFS=1.0E+12 NEFF=1.001E-02 NSS=0.0 TPG=-1.0",
			"+RSH=79.10 CGDO=2.89E-10 CGSO=2.89E-10",
			"+CJ=1.319E-04 MJ=0.4125 CJSW=3.421E-10 MJSW=0.198 PB=0.66",
			".TEMP 25.0"
		};
		setSpiceHeaderLevel2(headerLevel2);

		//**************************************** ARCS ****************************************

		/** metal 1 arc */
		metalArcs[0] = newArcProto("Metal-1", 0, 3.0, ArcProto.Function.METAL1,
			new Technology.ArcLayer(metalLayers[0], /*3,*/ Poly.Type.FILLED, "7.1")
		);
		metalArcs[0].setFactoryFixedAngle(true);
		metalArcs[0].setWipable();
		metalArcs[0].setFactoryAngleIncrement(90);

		/** metal 2 arc */
		metalArcs[1] = newArcProto("Metal-2", 0, 3.0, ArcProto.Function.METAL2,
			new Technology.ArcLayer(metalLayers[1], /*3,*/ Poly.Type.FILLED, "9.1")
		);
		metalArcs[1].setFactoryFixedAngle(true);
		metalArcs[1].setWipable();
		metalArcs[1].setFactoryAngleIncrement(90);

		/** metal 3 arc */
		metalArcs[2] = newArcProto("Metal-3", 0, 3.0, ArcProto.Function.METAL3,
			new Technology.ArcLayer(metalLayers[2], /*3,*/ Poly.Type.FILLED, "15.1")
		);
		metalArcs[2].setFactoryFixedAngle(true);
		metalArcs[2].setWipable();
		metalArcs[2].setFactoryAngleIncrement(90);

		/** metal 4 arc */
		metalArcs[3] = newArcProto("Metal-4", 0, 3.0, ArcProto.Function.METAL4,
			new Technology.ArcLayer(metalLayers[3], /*3,*/ Poly.Type.FILLED, "22.1")
		);
		metalArcs[3].setFactoryFixedAngle(true);
		metalArcs[3].setWipable();
		metalArcs[3].setFactoryAngleIncrement(90);

		/** metal 5 arc */
		metalArcs[4] = newArcProto("Metal-5", 0, 3.0, ArcProto.Function.METAL5,
			new Technology.ArcLayer(metalLayers[4], /*3,*/ Poly.Type.FILLED, "26.1")
		);
		metalArcs[4].setFactoryFixedAngle(true);
		metalArcs[4].setWipable();
		metalArcs[4].setFactoryAngleIncrement(90);

		/** metal 6 arc */
		metalArcs[5] = newArcProto("Metal-6", 0, 5.0, ArcProto.Function.METAL6,
			new Technology.ArcLayer(metalLayers[5], /*5,*/ Poly.Type.FILLED, "30.1")
		);
		metalArcs[5].setFactoryFixedAngle(true);
		metalArcs[5].setWipable();
		metalArcs[5].setFactoryAngleIncrement(90);

		/** polysilicon 1 arc */
		polyArcs[0] = newArcProto("Polysilicon-1", 0, 2.0, ArcProto.Function.POLY1,
			new Technology.ArcLayer(poly1Layer, /*2,*/ Poly.Type.FILLED, "3.1")
		);
		polyArcs[0].setFactoryFixedAngle(true);
		polyArcs[0].setWipable();
		polyArcs[0].setFactoryAngleIncrement(90);

		/** polysilicon 2 arc */
		polyArcs[1] = newArcProto("Polysilicon-2", 0, 7.0, ArcProto.Function.POLY2,
			new Technology.ArcLayer(poly2_lay, /*7,*/ Poly.Type.FILLED, "11.1")
		);
		polyArcs[1].setFactoryFixedAngle(true);
		polyArcs[1].setWipable();
		polyArcs[1].setFactoryAngleIncrement(90);
//		polyArcs[1].setNotUsed(true);

		/** P-active arc */
		activeArcs[P_TYPE] = newArcProto("P-Active", 12.0, 15.0, ArcProto.Function.DIFFP,
			new Technology.ArcLayer(activeLayers[P_TYPE], /*3,*/ Poly.Type.FILLED, "2.1"),
			new Technology.ArcLayer(wellLayers[N_TYPE], /*15,*/ Poly.Type.FILLED, "2.1", "2.3"),
			new Technology.ArcLayer(selectLayers[P_TYPE], /*7,*/ Poly.Type.FILLED, "2.1", "4.2")
		);
		activeArcs[P_TYPE].setFactoryFixedAngle(true);
		activeArcs[P_TYPE].setWipable();
		activeArcs[P_TYPE].setFactoryAngleIncrement(90);

		/** N-active arc */
		activeArcs[N_TYPE] = newArcProto("N-Active", 12.0, 15.0, ArcProto.Function.DIFFN,
			new Technology.ArcLayer(activeLayers[N_TYPE], /*3,*/ Poly.Type.FILLED, "2.1"),
			new Technology.ArcLayer(wellLayers[P_TYPE], /*15,*/ Poly.Type.FILLED, "2.1", "2.3"),
			new Technology.ArcLayer(selectLayers[N_TYPE], /*7,*/ Poly.Type.FILLED, "2.1", "4.2")
		);
		activeArcs[N_TYPE].setFactoryFixedAngle(true);
		activeArcs[N_TYPE].setWipable();
		activeArcs[N_TYPE].setFactoryAngleIncrement(90);

		/** General active arc */
		active_arc = newArcProto("Active", 0, 3.0, ArcProto.Function.DIFF,