mocmos.java

The ElectricTM VLSI Design System is an open-source Electronic Design Automation (EDA) system that c

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 *
 * Electric(tm) VLSI Design System
 *
 * File: MoCMOS.java
 *
 * Copyright (c) 2003 Sun Microsystems and Static Free Software
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 * MERCHANTABILITY or FITNESS FOR A PARTICULAR PURPOSE.  See the
 * GNU General Public License for more details.
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package com.sun.electric.technology.technologies;

import com.sun.electric.database.geometry.EGraphics;
import com.sun.electric.database.geometry.Poly;
import com.sun.electric.database.geometry.DBMath;
import com.sun.electric.database.hierarchy.EDatabase;
import com.sun.electric.database.prototype.NodeProto;
import com.sun.electric.database.prototype.PortCharacteristic;
import com.sun.electric.database.text.Setting;
import com.sun.electric.database.text.TextUtils;
import com.sun.electric.database.text.Version;
import com.sun.electric.database.topology.NodeInst;
import com.sun.electric.database.variable.VarContext;
import com.sun.electric.database.variable.Variable;
import com.sun.electric.technology.ArcProto;
import com.sun.electric.technology.DRCRules;
import com.sun.electric.technology.DRCTemplate;
import com.sun.electric.technology.EdgeH;
import com.sun.electric.technology.EdgeV;
import com.sun.electric.technology.Foundry;
import com.sun.electric.technology.Layer;
import com.sun.electric.technology.PrimitiveNode;
import com.sun.electric.technology.PrimitivePort;
import com.sun.electric.technology.SizeOffset;
import com.sun.electric.technology.Technology;
import com.sun.electric.technology.XMLRules;
import com.sun.electric.technology.Xml;
import com.sun.electric.technology.xml.XmlParam;
import com.sun.electric.tool.user.User;

import java.awt.Color;
import java.io.PrintWriter;
import java.util.List;
import java.util.ArrayList;
import java.util.Collections;
import java.util.HashMap;
import java.util.Map;

/**
 * This is the MOSIS CMOS technology.
 */
public class MoCMOS extends Technology
{
	/** Value for standard SCMOS rules. */		public static final int SCMOSRULES = 0;
	/** Value for submicron rules. */			public static final int SUBMRULES  = 1;
	/** Value for deep rules. */				public static final int DEEPRULES  = 2;

	/** key of Variable for saving technology state. */
	public static final Variable.Key TECH_LAST_STATE = Variable.newKey("TECH_last_state");

    public static final Version changeOfMetal6 =Version.parseVersion("8.02o"); // Fix of bug #357

	// layers to share with subclasses
    private Layer[] viaLayers = new Layer[5];
	private Layer poly1Layer, poly2_lay, transistorPolyLayer;
    private Layer silicideBlockLayer;
    private Layer[] selectLayers;
    private Layer[] metalLayers = new Layer[6]; // 1 -> 6
    private Layer polyCutLayer;
    private Layer pActiveWellLayer;
    private Layer[] activeLayers = new Layer[2];
    private Layer[] pseudoActiveLayers = new Layer[2];
    private Layer[] pseudoSelectLayers = new Layer[2];
    private Layer[] pseudoWellLayers = new Layer[2];
    private Layer[] wellLayers = new Layer[2];
    private Layer activeCutLayer;
    private Layer thickActiveLayer;
    private Layer passivationLayer;
    private Layer polyCapLayer;
    private Layer padFrameLayer;
    private Layer pBaseLayer;

	// arcs
    /** metal 1->6 arcs */						private ArcProto[] metalArcs = new ArcProto[6];
	/** polysilicon 1/2 arc */					private ArcProto[] polyArcs = new ArcProto[2];
    /** P/N-active arcs */                      private ArcProto[] activeArcs = new ArcProto[2];
    /** P/N-well arcs */                        private ArcProto[] wellArcs = new ArcProto[2];
    /** General active arc */                   private ArcProto active_arc;

	// nodes. Storing nodes only whe they are need in outside the constructor
    /** metal-1->6-pin */				        private PrimitiveNode[] metalPinNodes = new PrimitiveNode[6];
	/** active pins */					        private PrimitiveNode[] activePinNodes = new PrimitiveNode[2];
    /** well pins */					        private PrimitiveNode[] wellPinNodes = new PrimitiveNode[2];
    /** polysilicon-1-pin/2-pin */			    private PrimitiveNode[] polyPinNodes = new PrimitiveNode[2];
    /** metal-1-P/N-active-contacts */          private PrimitiveNode[] metalActiveContactNodes = new PrimitiveNode[2];
	/** metal-1-polysilicon-1/2/1-2/-contact */	private PrimitiveNode[] metal1PolyContactNodes = new PrimitiveNode[3];
    /** P/N-Transistors */                      private PrimitiveNode[] transistorNodes = new PrimitiveNode[2];
	/** ThickOxide Transistors */				private PrimitiveNode[] thickTransistorNodes = new PrimitiveNode[2];
    /** Scalable Transistors */			        private PrimitiveNode[] scalableTransistorNodes;
    /** NPN Transistor */                       private PrimitiveNode npnTransistorNode;
    /** M1M2 -> M5M6 contacts */				private PrimitiveNode[] metalContactNodes = new PrimitiveNode[5];
    /** metal-1-P/N-Well-contacts */            private PrimitiveNode[] metalWellContactNodes = new PrimitiveNode[2];
    // for dynamically modifying the transistor geometry
	private Technology.NodeLayer[] transistorPolyLayers = new Technology.NodeLayer[2];
	private Technology.NodeLayer[] transistorActiveLayers = new Technology.NodeLayer[2];
	private Technology.NodeLayer[] transistorActiveTLayers = new Technology.NodeLayer[2];
    private Technology.NodeLayer[] transistorActiveBLayers = new Technology.NodeLayer[2];
	private Technology.NodeLayer[] transistorPolyLLayers = new Technology.NodeLayer[2];
    private Technology.NodeLayer[] transistorPolyRLayers = new Technology.NodeLayer[2];
    private Technology.NodeLayer[] transistorPolyCLayers = new Technology.NodeLayer[2];
	private Technology.NodeLayer[] transistorWellLayers = new Technology.NodeLayer[2];
	private Technology.NodeLayer[] transistorSelectLayers = new Technology.NodeLayer[2];

	// design rule constants
//	/** wide rules apply to geometry larger than this */				private static final double WIDELIMIT = 100;

	// -------------------- private and protected methods ------------------------

    public MoCMOS(Generic generic, Xml.Technology t) {
        super(generic, t);
		setNoNegatedArcs();
		setStaticTechnology();
        setFactoryResolution(0.01); // value in lambdas   0.005um -> 0.05 lambdas
        // Logical Effort Tech-dependent settings
        setFactoryLESettings(0.167, 0.16, 0.7);

		//**************************************** LAYERS ****************************************
		metalLayers[0] = findLayer("Metal-1");
		metalLayers[1] = findLayer("Metal-2");
		metalLayers[2] = findLayer("Metal-3");
		metalLayers[3] = findLayer("Metal-4");
		metalLayers[4] = findLayer("Metal-5");
		metalLayers[5] = findLayer("Metal-6");
		poly1Layer = findLayer("Polysilicon-1");
		poly2_lay = findLayer("Polysilicon-2");
		activeLayers[P_TYPE] = findLayer("P-Active");
		activeLayers[N_TYPE] = findLayer("N-Active");
        selectLayers = new Layer[2];
		selectLayers[P_TYPE] = findLayer("P-Select");
		selectLayers[N_TYPE] = findLayer("N-Select");
		wellLayers[P_TYPE] = findLayer("P-Well");
		wellLayers[N_TYPE] = findLayer("N-Well");
		polyCutLayer = findLayer("Poly-Cut");
		activeCutLayer = findLayer("Active-Cut");
        for (int i = 0; i < viaLayers.length; i++)
		    viaLayers[i] = findLayer("Via");
		passivationLayer = findLayer("Passivation");
		transistorPolyLayer = findLayer("Transistor-Poly");
		polyCapLayer = findLayer("Poly-Cap");
		pActiveWellLayer = findLayer("P-Active-Well");
		silicideBlockLayer = findLayer("Silicide-Block");
		thickActiveLayer = findLayer("Thick-Active");
		padFrameLayer = findLayer("Pad-Frame");
        /***************************************/
        // createExtraLayers
		pBaseLayer = findLayer("P-Base");
        /***************************************/
		Layer pseudoMetal1_lay = metalLayers[0].getPseudoLayer();		// Pseudo-Metal-1
		Layer pseudoMetal2_lay = metalLayers[1].getPseudoLayer();		// Pseudo-Metal-2
		Layer pseudoMetal3_lay = metalLayers[2].getPseudoLayer();		// Pseudo-Metal-3
		Layer pseudoMetal4_lay = metalLayers[3].getPseudoLayer();		// Pseudo-Metal-4
		Layer pseudoMetal5_lay = metalLayers[4].getPseudoLayer();		// Pseudo-Metal-5
		Layer pseudoMetal6_lay = metalLayers[5].getPseudoLayer();		// Pseudo-Metal-6
		Layer pseudoPoly1_lay = poly1Layer.getPseudoLayer();            // Pseudo-Polysilicon-1
		Layer pseudoPoly2_lay = poly2_lay.getPseudoLayer();             // Pseudo-Polysilicon-2
		pseudoActiveLayers[P_TYPE] = activeLayers[P_TYPE].getPseudoLayer();		// Pseudo-P-Active
		pseudoActiveLayers[N_TYPE] = activeLayers[N_TYPE].getPseudoLayer();		// Pseudo-N-Active
		pseudoSelectLayers[P_TYPE] = selectLayers[P_TYPE].getPseudoLayer();	// Pseudo-P-Select
		pseudoSelectLayers[N_TYPE] = selectLayers[N_TYPE].getPseudoLayer();	// Pseudo-N-Select
		pseudoWellLayers[P_TYPE] = wellLayers[P_TYPE].getPseudoLayer();		// Pseudo-P-Well
		pseudoWellLayers[N_TYPE] = wellLayers[N_TYPE].getPseudoLayer();		// Pseudo-N-Well

		//**************************************** ARCS ****************************************

		metalArcs[0] = findArcProto("Metal-1");
		metalArcs[1] = findArcProto("Metal-2");
		metalArcs[2] = findArcProto("Metal-3");
		metalArcs[3] = findArcProto("Metal-4");
		metalArcs[4] = findArcProto("Metal-5");
		metalArcs[5] = findArcProto("Metal-6");
		polyArcs[0] = findArcProto("Polysilicon-1");
		polyArcs[1] = findArcProto("Polysilicon-2");
		activeArcs[P_TYPE] = findArcProto("P-Active");
		activeArcs[N_TYPE] = findArcProto("N-Active");
		wellArcs[P_TYPE] = findArcProto("P-Well");
		wellArcs[N_TYPE] = findArcProto("N-Well");
		active_arc = findArcProto("Active");

		//**************************************** NODES ****************************************

		metalPinNodes[0] = findNodeProto("Metal-1-Pin");
		metalPinNodes[1] = findNodeProto("Metal-2-Pin");
		metalPinNodes[2] = findNodeProto("Metal-3-Pin");
		metalPinNodes[3] = findNodeProto("Metal-4-Pin");
		metalPinNodes[4] = findNodeProto("Metal-5-Pin");
		metalPinNodes[5] = findNodeProto("Metal-6-Pin");
		polyPinNodes[0] = findNodeProto("Polysilicon-1-Pin");
		polyPinNodes[1] = findNodeProto("Polysilicon-2-Pin");
		activePinNodes[P_TYPE] = findNodeProto("P-Active-Pin");
		activePinNodes[N_TYPE] = findNodeProto("N-Active-Pin");
		PrimitiveNode activeGenPinNode = findNodeProto("Active-Pin");

		wellPinNodes[P_TYPE] = findNodeProto("P-Well-Pin");
		wellPinNodes[N_TYPE] = findNodeProto("N-Well-Pin");
        metalActiveContactNodes[P_TYPE] = findNodeProto("Metal-1-P-Active-Con");
		metalActiveContactNodes[N_TYPE] = findNodeProto("Metal-1-N-Active-Con");
		metal1PolyContactNodes[0] = findNodeProto("Metal-1-Polysilicon-1-Con");
		metal1PolyContactNodes[1] = findNodeProto("Metal-1-Polysilicon-2-Con");
		metal1PolyContactNodes[2] = findNodeProto("Metal-1-Polysilicon-1-2-Con");
        String[] stdNames = {"p", "n"};
        for (int i = 0; i < 2; i++)
            transistorNodes[i] = findNodeProto(stdNames[i].toUpperCase()+"-Transistor");

		/** Thick oxide transistors */
		String[] thickNames = {"Thick-P", "Thick-N"};
		for (int i = 0; i < thickTransistorNodes.length; i++)
			thickTransistorNodes[i] = findNodeProto(thickNames[i] + "-Transistor");

        scalableTransistorNodes = new PrimitiveNode[2];
        scalableTransistorNodes[P_TYPE] = findNodeProto("P-Transistor-Scalable");
        scalableTransistorNodes[N_TYPE] = findNodeProto("N-Transistor-Scalable");
        npnTransistorNode = findNodeProto("NPN-Transistor");

		metalContactNodes[0] = findNodeProto("Metal-1-Metal-2-Con");
		metalContactNodes[1] = findNodeProto("Metal-2-Metal-3-Con");
		metalContactNodes[2] = findNodeProto("Metal-3-Metal-4-Con");
		metalContactNodes[3] = findNodeProto("Metal-4-Metal-5-Con");
		metalContactNodes[4] = findNodeProto("Metal-5-Metal-6-Con");

        for (int i = 0; i < metalWellContactNodes.length; i++)
            metalWellContactNodes[i] = findNodeProto(metalLayers[0].getName()+"-"+wellLayers[i].getName()+"-Con");
    }

    /**
     * Constructs MOCMOS technology without TSMC180 foundry.
     */
	public MoCMOS(Generic generic)
    {
		this(generic, "mocmos", "MOSIS CMOS", "MOSIS CMOS", Foundry.Type.MOSIS, 200, true); // in nanometers: really 0.2 micron
        initFoundryMOSIS();
    }