deposition.inp

pic 模拟程序！面向对象

deposition
{
	A model for ion deposition on a substrate surface, including a trench
   Periodic in x1, assumes ions already accelerated into the sheath.
}
Variables
{
   W = 1.5e-6 // sim width, m
   H = 5e-6 // sim height, m
   J = 30 // horizontal cells
   K = 100 // vertical cells
   Te = 5 // electron temperature in the plasma, eV
   Ti = 0.025 // ion temperature in the plasma, eV
   M = 40 // mass ratio Mi/me
   Vsheath = 100 // sheath bias, V
   p = 10e-3 // gas pressure in Torr
   Je = 5e4 // electron current to inject (nev_thermal/4), A/m^2
   Ji = 1.5e5 // ion current to inject (nev_sheath), A/m^2
   Wtrench = 0.5e-6 // trench width
   Htrench = 1e-6 // trench height
}
Region
{
Grid
{
	J = J
	x1s = 0.0
	x1f = W
	K = K
	x2s = 0.0
	x2f = H
	Geometry = 1 // x-y coordinates
   PeriodicFlagX1 = 1 // periodic in x1
}
Control
{
	dt = 1.0E-13
	ElectrostaticFlag = 4
}
MCC
{
   gas = Ar
   pressure = p
   eSpecies = electrons
   iSpecies = ions
   ecxFactor = M // compensate for reduced mass ratio
   icxFactor = M
}
Species
{
	name = electrons
	m = 9.11E-31
	q = -1.6e-19
   collisionModel = electron
}
Species
{
	name = ions
	m = 9.11E-31*M
	q = 1.6e-19
   collisionModel = ion
}
BeamEmitter
{
   A1 = 0
   A2 = H
   B1 = W
   B2 = H
	normal = -1
	speciesName = electrons
	I = Je*W
	np2c = 1e4
   units = EV
   temperature = Te
}
BeamEmitter
{
   A1 = 0
   A2 = H
   B1 = W
   B2 = H
	normal = -1
	speciesName = ions
	I = Ji*W
	np2c = 1e4
   units = EV
   temperature = Ti
}
Dielectric
{
   name = trenchLeft
   A1 = (W - Wtrench)/2
   A2 = Htrench
   B1 = (W - Wtrench)/2
   B2 = 0
   normal = 1
   QuseFlag = 1
   IdiagFlag = 1
   Ihist_avg = 8
   nxbins = 20
   nenergybins = 20
   energy_min = 0
   energy_max = 1.1*Vsheath
   nthetabins = 30
   theta_min = -90
   theta_max = 0   
}
Dielectric
{
   name = trenchBottom
   A1 = (W - Wtrench)/2
   A2 = Htrench/10
   B1 = (W + Wtrench)/2
   B2 = Htrench/10
   normal = 1
   QuseFlag = 1
   IdiagFlag = 1
   Ihist_avg = 8
   nxbins = 20
   nenergybins = 20
   energy_min = 0
   energy_max = 1.1*Vsheath
   nthetabins = 30
   theta_min = -90
   theta_max = 90   
}
Dielectric
{
   name = trenchRight
   A1 = (W + Wtrench)/2
   A2 = 0
   B1 = (W + Wtrench)/2
   B2 = Htrench
   normal = -1
   QuseFlag = 1
   IdiagFlag = 1
   Ihist_avg = 8
   nxbins = 20
   nenergybins = 20
   energy_min = 0
   energy_max = 1.1*Vsheath
   nthetabins = 30
   theta_min = 0
   theta_max = 90   
}
DielectricRegion
{
   name = leftSlab
	er = 10.0
   A1 = 0
   A2 = 0
   B1 = (W - Wtrench)/2
   B2 = Htrench
	QuseFlag = 1
}
DielectricRegion
{
   name = bottomSlab
	er = 10.0
   A1 = (W - Wtrench)/2
   A2 = 0
   B1 = (W + Wtrench)/2
   B2 = Htrench/10
	QuseFlag = 1
}
DielectricRegion
{
   name = rightSlab
	er = 10.0
   A1 = (W + Wtrench)/2
   A2 = 0
   B1 = W
   B2 = Htrench
	QuseFlag = 1
}
Equipotential
{
   name = substrate
   C = -Vsheath
   A1 = 0
   A2 = 0
   B1 = W
   B2 = 0
}
}