设计功率MOSFET驱动电路时需重点考虑寄生参数对电路的影响。米勒电容作为MOSFET器件的一项重要参数,在驱动电路的设计时需要重点关注。重点观察了MOSFET的开通和关断过程中栅极电压、漏源极电压和漏源极电流的变化过程,并分析了米勒电容、寄生电感等寄生参数对漏源极电压和漏源极电流的影响。分析了栅极电压在米勒平台附近产生振荡的原因,并提出了抑制措施,对功率MOSFET的驱动设计具有一定的指导意义。When designing the drive circuit of power MOSFET,the influence of parasitic parameters on the circuit should be concerned.As an important parameter of MOSFET device,Miller capacitance should be considered in the design of drive circuit.The variation of gate voltage,drain source voltage and drain source current during the turn-on and turn-off of MOSFET were observed.The influences of parasitic parameters such as Miller capacitance and parasitic inductance on drain source voltage and drain source current were analyzed.The reasons of gate voltage oscillation nearby Miller plateau were analyzed,and the restraining measures were put forward.This research was instructive for the drive design of power MOSFET.
标签： mosfet
上传时间： 2022-04-02
上传用户：默默
电源设计资料现代逆变技术及其应用.pdf - 6.63MB现代高频感应加热电源工程设计与应用.pdf - 23.81MB现代电源设计大全.pdf - 7.16MB仙童开关电源设计软件Off-lineSMPSDesignTools1.6.zip - 5.32MB特种集成电源最新应用技术.pdf - 7.60MB实用电池充电器与保护器电路集锦.pdf - 6.56MB刘坚强电源维修视频.zip - 2.19GB开源力量新版在线学习网站开通啦！.txt - 5.72KB开关稳压电源--原理、设计与实用电路.pdf - 7.40MB开关电源知识.rar - 478.56KB开关电源原理与设计.pdf - 4.05MB开关电源原理与设计-经典.pdf - 682.32KB开关电源抑制噪声技术.pdf - 283.13KB
标签： 开关电源
上传时间： 2022-06-05
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高通蓝牙芯片qcc5127详细规格书datasheet.pdf英文版，共97页 详细说明:1 Package information(pin allocations, pios terminal functions)2 Bluetooth subsystem 3 Cystal oscillator4 System powerstates (Idel,Active,Sleep, Off)5 Host Interface subsystem6 Applications subsystem ( QSPI Flash controller)7 Audio subsystem(Dual core Kalimba, ROM, RAM and caches, Data, engine)8 Audio interfaces ( Analog, Digital, Simultaneous audio routing)9 Peripheral interfaces (PIOs, LED, USB, SPI, UART)10 Boot manager11 System manager12 example application schematic13 Electrical characteristics14 Audio performance15 Bluetooth performance16 Power consumption
上传时间： 2022-06-12
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DescriptionThe IMX385LQR-C is a diagonal 8.35 mm (Type 1/2) CMOS active pixel type solid-state image sensor with a squarepixel array and 2.13 M effective pixels. This chip operates with analog 3.3 V, digital 1.2 V, and interface 1.8 V triplepower supply, and has low power consumption. High sensitivity, low dark current and no smear are achieved throughthe adoption of R, G and B primary color mosaic filters. This chip features an electronic shutter with variablecharge-integration time.(Applications: Surveillance cameras)
标签： CMOS传感器 IMX385LQR-C
上传时间： 2022-06-18
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sony CMOS传感器datasheet，IMX178LQJ-C_Data_SheetDescriptionThe IMX178LQJ-C is a diagonal 8.92 mm (Type 1/1.8) CMOS active pixel type image sensor with a square pixelarray and 6.44 M effective pixels. This chip operates with analog 2.9 V, digital 1.2 V and interface 1.8 V triple powersupply, and has low power consumption.High sensitivity, low dark current and no smear are achieved through the adoption of R, G and B primary colormosaic filters.This chip features an electronic shutter with variable charge-integration time.(Applications: Surveillance cameras, FA cameras, Industrial cameras)
标签： CMOS传感器 IMX178LQJ-C
上传时间： 2022-06-18
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le flows through MOS channel while Ih flows across PNP transistor Ih= a/(1-a) le, IE-le+lh=1/(1-a)' le Since IGBT has a long base PNP, a is mainly determined by ar si0 2ar= 1/cosh(1/La), La: ambipolar diff length a-0.5 (typical value)p MOSFET channel current (saturation), le=U"Cox"W(2"Lch)"(Vc-Vth)le Thus, saturated collector current Ic, sat=1/(1-a)"le=-1/(1-a)"UCox"W/(2Lch)"(Vo-Vth)2Also, transconductance gm, gm= 1/(1-a)"u' Cox W/Lch*(Vo-Vth)Turn-On1. Inversion layer is formed when Vge>Vth2. Apply positive collector bias, +Vce3. Electrons flow from N+ emitter to N-drift layer providing the base current for the PNP transistor4. Since J1 is forward blased, hole carriers are injected from the collector (acts as an emitter).5. Injected hole carriers exceed the doping level of N-drift region (conductivity modulation). Turn-Off1. Remove gate bias (discharge gate)2. Cut off electron current (base current, le, of pnp transistor)
标签： igbt
上传时间： 2022-06-20
上传用户：wangshoupeng199
一、IGBT 驱动1 驱动电压的选择IGBT 模块GE 间驱动电压可由不同地驱动电路产生。典型的驱动电路如图1 所示。图1 IGBT 驱动电路示意图Q1，Q2 为驱动功率推挽放大，通过光耦隔离后的信号需通过Q1，Q2 推挽放大。选择Q1，Q2 其耐压需大于50V 。选择驱动电路时，需考虑几个因素。由于IGBT 输入电容较MOSFET 大，因此IGBT 关断时，最好加一个负偏电压，且负偏电压比MOSFET 大， IGBT 负偏电压最好在-5V~-10V 之内；开通时，驱动电压最佳值为15V 10％ ,15V 的驱动电压足够使IGBT 处于充分饱和，这时通态压降也比较低，同时又能有效地限制短路电流值和因此产生的应力。若驱动电压低于12V ，则IGBT 通态损耗较大， IGBT 处于欠压驱动状态；若 VGE >20V ，则难以实现电流的过流、短路保护，影响 IGBT 可靠工作。2 栅极驱动功率的计算由于IGBT 是电压驱动型器件，需要的驱动功率值比较小，一般情况下可以不考虑驱动功率问题。但对于大功率IGBT ，或要求并联运行的IGBT 则需要考虑驱动功率。IGBT 栅极驱动功率受到驱动电压即开通VGE( ON )和关断 VGE( off ) 电压，栅极总电荷 QG 和开关 f 的影响。栅极驱动电源的平均功率 PAV 计算公式为：PAV =（VGE(ON ) +VGE( off ) ）* QG *f对一般情况 VGE( ON ) =15V，VGE( off ) =10V，则 PAV 简化为： PAV =25* QG *f。f 为 IGBT 开关频率。栅极峰值电流 I GP 为：
上传时间： 2022-06-21
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This example shows how you can use signal functions in the Visiondebugger to simulate a signal that is coming into one of the analog inputs of the LPC21xx.The Measure example is described in detail in the Getting StartedUser's Guide.The MEASURE example program is available for several targets:Simulator: uVision Simulator for LPC2129MCB2100: Keil MCB2100 evaluation board with ULINK debugger - Application is loaded to internal Flash. - Switch S2 (INT1) is used as GPIO and sampled (jumper positions: J1= off, J7= on) - potentiometer POT1 is sampled as AIN0 (jumper position: J2= on) - serial port COM1 parameters: 9600 baud, no parity, 8-bits, 1 stop bit, flow control noneMCB2130: Keil MCB2130 evaluation board with ULINK debugger - Application is loaded to internal Flash. - Switch S2 (INT1) is used as GPIO and sampled (jumper positions: J1= off, J7= on) - potentiometer POT1 is sampled as AIN1 (jumper position: J2= on) - serial port COM1 parameters: 9600 baud, no parity, 8-bits, 1 stop bit, flow control none
标签： dac8568
上传时间： 2022-06-28
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带显示屏的CWM500的测量操作可完全通过前面板的按键完成，该文档中常用按键如下图所示，更详细的按键使用信息请参阅CMW500用户手册：任务按键（TASKS）：显示或隐藏任务栏菜单（类似电脑操作系统的任务栏菜单），CMW500任务栏菜单最多可显示8个信号源和测量功能任务。测量按键（MEASURE）：打开测量控制对话框，通过测量控制对话框可以选择需要的测量功能。信号源按键（SIGNALGEN）：打开信号源控制对话框，通过信号源控制对话框可以选择需要的信号源功能。ON/OFF 按键：用于控制信号源功能或测量功能的启动和停止RESTART/STOP 按键：用于启动处于RDY 状态或停止单次或连续测量功能ESC按键可关闭当前弹出窗口数字按键区：用于数字输入，如设置频率，参考功率等。旋钮：用于控制界面光标在各个控件间的移动；用于数值微调：用于列表控件中滚动选项；按下相当于ENTER键四向导航键：用于控制界面光标在各个控件间的移动；上下间还可用于数值微调：
上传时间： 2022-07-18
上传用户：shjgzh
三极管除了可以当做交流信号放大器之外， 也可以做为开关之用。严格说起来， 三极管与一般的机械接点式开关在动作上并不完全相同， 但是它却具有一些机械式开关所没有的特点。图1所示，即为三极管电子开关的基本电路图。由下图可知，负载电阻被直接跨接于三极管的集电极与电源之间，而位居三极管主电流的回路上。输入电压Vin 则控制三极管开关的开启(open) 与闭合(closed) 动作，当三极管呈开启状态时， 负载电流便被阻断， 反之， 当三极管呈闭合状态时， 电流便可以流通。详细的说，当Vin 为低电压时，由于基极没有电流，因此集电极亦无电流，致使连接于集电极端的负载亦没有电流，而相当于开关的开启，此时三极管乃胜作于截止(cut off) 区。
上传时间： 2022-07-25
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