Software Radio (SR) is one of the most important emerging technologies for the future of wireless communication services. By moving radio functionality into software, it promises to give flexible radio systems that are multi-service, multi- standard, multi-band, reconfigurable and reprogrammable by software. Today’s radios are matched to a particular class of signals that are well defined bytheircarrierfrequencies,modulationformatsandbandwidths.Aradiotransmitter today can only up convert signals with well-defined bandwidths over defined center frequencies, while, on the other side of the communication chain, a radio receiver can only down convert well-defined signal bandwidths, transmitted over specified carrier frequencies.
上传时间： 2020-06-01
上传用户：shancjb
In this thesis several asp ects of space-time pro cessing and equalization for wire- less communications are treated. We discuss several di?erent metho ds of improv- ing estimates of space-time channels, such as temp oral parametrization, spatial parametrization, reduced rank channel estimation, b o otstrap channel estimation, and joint estimation of an FIR channel and an AR noise mo del. In wireless commu- nication the signal is often sub ject to intersymb ol interference as well as interfer- ence from other users.
标签： Communications Space-Time Processing Wireless for
上传时间： 2020-06-01
上传用户：shancjb
在互補式金氧半(CMOS)積體電路中，隨著量產製程的演進，元件的尺寸已縮減到深次微 米(deep-submicron)階段，以增進積體電路(IC)的性能及運算速度，以及降低每顆晶片的製造 成本。但隨著元件尺寸的縮減，卻出現一些可靠度的問題。 在次微米技術中，為了克服所謂熱載子(Hot-Carrier)問題而發展出 LDD(Lightly-Doped Drain) 製程與結構; 為了降低 CMOS 元件汲極(drain)與源極(source)的寄生電阻(sheet resistance) Rs 與 Rd，而發展出 Silicide 製程; 為了降低 CMOS 元件閘級的寄生電阻 Rg，而發展出 Polycide 製 程 ; 在更進步的製程中把 Silicide 與 Polycide 一起製造，而發展出所謂 Salicide 製程
标签： Protection CMOS ESD ICs in
上传时间： 2020-06-05
上传用户：shancjb
ESD is a crucial factor for integrated circuits and influences their quality and reliability. Today increasingly sensitive processes with deep sub micron structures are developed. The integration of more and more functionality on a single chip and saving of chip area is required. Integrated circuits become more susceptible to ESD/EOS related damages. However, the requirements on ESD robustness especially for automotive applications are increasing. ESD failures are very often the reason for redesigns. Much research has been conducted by semiconductor manufacturers on ESD robust design.
标签： Guidelines Design Basic ESD
上传时间： 2020-06-05
上传用户：shancjb
The term “ smart grid ” defi nes a self - healing network equipped with dynamic optimiza- tion techniques that use real - time measurements to minimize network losses, maintain voltage levels, increase reliability, and improve asset management. The operational data collected by the smart grid and its sub - systems will allow system operators to rapidly identify the best strategy to secure against attacks, vulnerability, and so on, caused by various contingencies. However, the smart grid fi rst depends upon identifying and researching key performance measures, designing and testing appropriate tools, and developing the proper education curriculum to equip current and future personnel with the knowledge and skills for deployment of this highly advanced system.
上传时间： 2020-06-07
上传用户：shancjb
Software-defined radios (SDRs) have been around for more than a decade. The first complete Global Positioning System (GPS) implementation was described by Dennis Akos in 1997. Since then several research groups have presented their contributions. We therefore find it timely to publish an up-to-date text on the sub- ject and at the same time include Galileo, the forthcoming European satellite- based navigation system. Both GPS and Galileo belong to the category of Global Navigation Satellite Systems (GNSS).
标签： A_Software-Defined_GPS_and_Galile o_Receiver
上传时间： 2020-06-09
上传用户：shancjb
Agilent 34401A Service Guide.pdfIEC Measurement Category II includes electrical devices connected to mains at an outlet on a branch circuit. Such devices include most small appliances, test equipment, and other devices that plug into a branch outlet or socket. The 34401A may be used to make measurements with the HI and LO inputs connected to mains in such devices, or to the branch outlet itself (up to 300 VAC). However, the 34401A may not be used with its HI and LO inputs connected to mains in permanently installed electrical devices such as the main circuit-breaker panel, sub-panel disconnect boxes, or permanently wired motors. Such devices and circuits are subject to overvoltages that may exceed the protection limits of the 34401A. Note: Voltages above 300 VAC may be measured only in circuits that are isolated from mains. However, transient overvoltages are also present on circuits that are isolated from mains. The Agilent 34401A are designed to safely withstand occasional transient overvoltages up to 2500 Vpk. Do not use this equipment to measure circuits where transient overvoltages could exceed this level. Additional Notices Waste Electrical and Electronic Equipment (WEEE) Directive 2002/96/EC This product complies with the WEEE Directive (2002/96/EC) marking requirement. The affixed product label (see below) indicates that you must not discard this electrical/electronic product in domestic household waste. Product Category: With reference to the equipment types in the WEEE directive Annex 1, this product is classified as a "Monitoring and Control instrumentation" product. Do not dispose in domestic household waste. To return unwanted products, contact your local Agilent office, or see www.agilent.com/environment/product for more information. Agilent 34138A Test Lead Set The Agilent 34401A is compatible with the Agilent 34138A Test Lead Set described below. Test Lead Ratings Test Leads - 1000V, 15A Fine Tip Probe Attachments - 300V, 3A Mini Grabber Attachment - 300V, 3A SMT Grabber Attachments - 300V, 3A Operation The Fine Tip, Mini Grabber, and SMT Grabber attachments plug onto the probe end of the Test Leads. Maintenance If any portion of the Test Lead Set is worn or damaged, do not use. Replace with a new Agilent 3413
标签： agilent
上传时间： 2022-02-20
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本系统采用电动机电枢供电回路串接采样电阻的方式来实现对小型直流有刷电动机的转速测量。该系统主要由二阶低通滤波电路,小信号放大电路、单片机测量显示电路、开关稳压电源电路等组成。同时自制电机测速装置,用高频磁环作为载体,用线圈绕制磁环,利用电磁感应原理检测电机运行时的漏磁,将变化的磁场信号转化为磁环上的感应电流。用信号处理单元电路将微弱电信号转化为脉冲信号,送由单片机检测,从而达到准确测量电机的速度的要求。In this system, the sampling resistance of armature power supply circuit is connected in series to measure the speed of small DC brush motor. The system is mainly composed of second-order low-pass filter circuit, small signal amplifier circuit, single-chip measurement and display circuit, switching regulated power supply circuit and so on. At the same time, the self-made motor speed measuring device uses high frequency magnetic ring as the carrier, coil winding magnetic ring, and electromagnetic induction principle to detect the leakage of magnetic field during the operation of the motor, which converts the changed magnetic field signal into the induced current on the magnetic ring. The weak electric signal is transformed into pulse signal by signal processing unit circuit, which is sent to single chip computer for detection, so as to meet the requirement of accurate measurement of motor speed.
标签： 直流电动机
上传时间： 2022-03-26
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三菱电机功率器件在工业、电气化铁道、办公自动化、家电产品等多种领域的电力变换及电动机控制中得到广泛应用。为了真正满足市场对装置噪音低、效率高、体积小、重量轻、精度高、功能强、容量大的要求，三菱电机积极致力于新型器件的研究、开发，为人类的节能和环保不断努力。第5代IGBT和IPM模块均采用三菱电机第5代IGBT硅片CSTBTIM技术，并具有正温度系数特征，与传统的沟槽型构造IGBT相比，降低了集电极一发射极间饱和电压，从而实现了更低损耗。同时改进了封装技术，大大减小了模块内部分布电感。本应用手册的出版，旨在帮助用户了解第5代IGBT和IPM模块的特性和工作原理，更加方便的使用三菱电机的半导体产品。三菱电机谨向所有购买和支持三菱半导体产品的用户表示诚挚的感谢。1.IGBT模块的一般认识1.1 NF系列IGBT模块的特点NF系列IGBT模块主要具有以下两大特点：1，采用第5代IGBT硅片在沟槽型IGBT的基础上增加电荷蓄积层的新结构（CSTBT）改善了关断损耗（Eoff）和集电极-发射极问饱和电压VEisat的折衷。插入式组合元胞（PCM）的使用增强了短路承受能力（SCSOA）并降低了栅极电容，从而降低驱动功率。CSTBT:Carrier Stored Trench-Gate Bipolar Transistor载流子存储式沟槽硼型双极晶体臂
标签： igbt
上传时间： 2022-06-19
上传用户：shjgzh
如何正确导入Spice模型方法一、将模型文件粘在当前的图纸上，方法见图：步骤1：复制模型文件（米源于OrCAD PSpice Model）步骤2：将复制的文件复制到下图所示位置步骤3：点击上面框图中的OK，将文件粘贴在纸面上，然后从文件中拖一个三极管出来，将名字改成一样即可。方法二、如有*.1ib的库文件，比如PSPICE的日本晶体管库jbipolar.lib，将该文件考到LTC LTspicelV\lib\sub目录中。然后按图操作：方法三：将模型文件直接粘贴到LTCYLTspiceIV\ib\cmp中的相应文件中。如要将PSPICE的diode.lib的模型全导入到cmp中的standard.dio中。先用记事本打开diode.1ib，全选，复制。而后用记事本打开standard，dio，在其适当的位置粘贴，关闭。发现二极管库里多了很多元件（见下图）。三极管同理。
上传时间： 2022-06-22
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