IGBT图解
le flows through MOS channel while Ih flows across PNP transistor Ih= a/(1-a) le, IE-le+lh=1/(1-a)' le Since IGBT has a long base PNP, a is mainly...
le flows through MOS channel while Ih flows across PNP transistor Ih= a/(1-a) le, IE-le+lh=1/(1-a)' le Since IGBT has a long base PNP, a is mainly...
IGBT模块的一些基本知识2·怎样读数据手册3.IGBT的驱动电路4,电压尖峰吸收回路5·短路6,IGBT模块的可靠性和实效分析7,仿真软件Melcosim的使用方法8.一些注意事项正的门极电压推荐15V(±10%)如右图所示Vog越高Vceat和Eon越小,损耗减小。但是16.5V以上的话短路耐量...