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Collector

  • A garbage Collector for C and C

    A garbage Collector for C and C

    标签: Collector garbage and for

    上传时间: 2015-10-08

    上传用户:Divine

  • WIRELESS SENSOR NETWORKS Environmental Sensor Application of Rain Collector II with CrossBow Techn

    WIRELESS SENSOR NETWORKS Environmental Sensor Application of Rain Collector II with CrossBow Technology

    标签: Environmental Application Collector WIRELESS

    上传时间: 2014-01-26

    上传用户:稀世之宝039

  • Driver Collector e book very useful one.

    Driver Collector e book very useful one.

    标签: Collector Driver useful book

    上传时间: 2014-01-16

    上传用户:jackgao

  • 74LS47.pdf

    英文描述: BCD to 7-Segment Decoder/Driver with Open-Collector Outputs 中文描述: BCD码到7段解码器/驱动器,集电极开路输出

    标签: 74 47 LS

    上传时间: 2013-07-13

    上传用户:m62383408

  • 交流瓦特/瓦特小时,乏尔/乏尔小时转换器

    交流瓦特/瓦特小时,乏尔/乏尔小时转换器 特点: 精确度0.25%满刻度 多种输入,输出选择 输入与输出绝缘耐压2仟伏特/1分钟 冲击电压测试5仟伏特(1.2x50us) 突波电压测试2.5仟伏特(0.25ms/1MHz) (IEC255-4) 尺寸小,稳定性高 主要规格: 精确度: 0.25% F.S. (23 ±5℃) 输入负载: <0.2VA (Voltage) <0.2VA (Current) 最大过载能力: Current related input:3 x rated continuous 10 x rated 30 sec. ,25 x rated 3sec. 50 x rated 1sec. Voltage related input:maximum 2 x rated continuous 输出反应速度: < 250ms(0~90%) 输出负载能力: < 10mA for voltage mode < 10V for current mode 输出之涟波 : < 0.1% F.S. 脉波输出型态: Photocouple of open Collector (max.30V/40mA) 归零调整范围: 0~±5% F.S. 最大值调整范围: 0~±10% F.S. 温度系数: 100ppm/℃ (0~50℃) 隔离特性: Input/Output/Power/Case 绝缘阻抗: >100Mohm with 500V DC 绝缘耐压能力: 2KVac/1 min. (input/output/power/case) 突波测试: ANSI C37.90a/1974,DIN-IEC 255-4 impulse voltage 5KV(1.2x50us) 使用环境条件: -20~60℃(20 to 90% RH non-condensed) 存放环境条件: -30~70℃(20 to 90% RH non-condensed) CE认证: EN 55022:1998/A1:2000 Class A EN 61000-3-2:2000 EN 61000-3-3:1995/A1:2001 EN 55024:1998/A1:2001

    标签: 瓦特 交流 转换器

    上传时间: 2013-11-11

    上传用户:wettetw

  • The Art of C++ by Herbert Schildt ISBN:0072255129 McGraw-Hill/Osborne © 2004 The author of

    The Art of C++ by Herbert Schildt ISBN:0072255129 McGraw-Hill/Osborne © 2004 The author of this text applies C++ to a wide variety of high-powered, practical applications, each focusing on a different aspect of the language. Examples range from a garbage Collector subsystem and a thread control panel to AI-based searches and more.

    标签: McGraw-Hill 0072255129 The Herbert

    上传时间: 2015-07-17

    上传用户:lx9076

  • C-Talk is interpreted scripting language with C-like syntax and dynamic type checking. Variables in

    C-Talk is interpreted scripting language with C-like syntax and dynamic type checking. Variables in C-Talk have no type. So there is no compile time type checking in C-Talk, all checking is performed at runtime. To preserve reference integrity, explicit memory deallocation is prohibited in C-Talk, unused objects are automatically deallocated by garbage Collector.

    标签: interpreted Variables scripting checking

    上传时间: 2015-08-17

    上传用户:王者A

  • 学习JAVA的三十个基本概念目前Java主要应用于中间件的开发(middleware)---处理客户机于服务器之间的通信技术,早期的实践证明,Java不适合pc应用程序的开发,其发展逐渐变成在开发手持

    学习JAVA的三十个基本概念目前Java主要应用于中间件的开发(middleware)---处理客户机于服务器之间的通信技术,早期的实践证明,Java不适合pc应用程序的开发,其发展逐渐变成在开发手持设备,互联网信息站,及车载计算机的开发.Java于其他语言所不同的是程序运行时提供了平台的独立性,称许可以在windows,solaris,linux其他操作系统上使用完全相同的代码.Java的语法与C++语法类似,C++/C程序员很容易掌握,而且Java是完全的彻底的面向对象的,其中提出了很好的GC(Garbage Collector)垃圾处理机制,防止内存溢出。

    标签: Java middleware JAVA 基本概念

    上传时间: 2013-12-26

    上传用户:hgy9473

  • I2C driver for PIC, PICC compiler - bitbanged. Needs pull-up resistor on SCK and SDA and ports set f

    I2C driver for PIC, PICC compiler - bitbanged. Needs pull-up resistor on SCK and SDA and ports set for open Collector

    标签: bitbanged and compiler resistor

    上传时间: 2017-06-30

    上传用户:yzhl1988

  • IGBT图解

    le flows through MOS channel while Ih flows across PNP transistor Ih= a/(1-a) le, IE-le+lh=1/(1-a)' le Since IGBT has a long base PNP, a is mainly determined by ar si0 2ar= 1/cosh(1/La), La: ambipolar diff length a-0.5 (typical value)p MOSFET channel current (saturation), le=U"Cox"W(2"Lch)"(Vc-Vth)le Thus, saturated Collector current Ic, sat=1/(1-a)"le=-1/(1-a)"UCox"W/(2Lch)"(Vo-Vth)2Also, transconductance gm, gm= 1/(1-a)"u' Cox W/Lch*(Vo-Vth)Turn-On1. Inversion layer is formed when Vge>Vth2. Apply positive Collector bias, +Vce3. Electrons flow from N+ emitter to N-drift layer providing the base current for the PNP transistor4. Since J1 is forward blased, hole carriers are injected from the Collector (acts as an emitter).5. Injected hole carriers exceed the doping level of N-drift region (conductivity modulation). Turn-Off1. Remove gate bias (discharge gate)2. Cut off electron current (base current, le, of pnp transistor)

    标签: igbt

    上传时间: 2022-06-19

    上传用户:wangshoupeng199