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Two-dimensional Junction Field-Effect Transistor (JFET) VDD 1 0 0.5V VGG 2 0 -1.0v AC 1V VSS 3 0 0.0V QJ1 1 2 3 M_NJF AREA=1 .MODEL M_NJF NBJT LEVEL=2 + options jfet defw=10.0um + output dc.debug

TURNOFF TRANSIENT OF PASS TRANSISTOR M1 11 2 3 4 MMOD W=20UM CS 1 0 6.0PF CL 3 0 6.0PF R1 3 6 200K VIN 6 0 DC 0 VDRN 1 11 DC 0 VG 2 0 DC 5 PWL 0 5 0.1N 0 1 0 VB 4 0 DC 0.0 .TRAN 0.05NS 0.2NS 0.0NS 0

.MODEL M_NPN nbjt level=2 + title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR + * Since, we are only simulating half of a device, we double the unit width + * 1.0 um emitter lengt

Circuit: *****Single NMOS Transistor For BSIM3V3.1 general purpose check (Id-Vd) *** Doing analysis at TEMP = 373.150000 and TNOM = 300.150000 Warning: Pd = 0 is less than W. Warning: Ps = 0 is les

Circuit: *****Single NMOS Transistor For BSIM3V3.1 general purpose check (Id-Vd) *** Doing analysis at TEMP = 300.150000 and TNOM = 300.150000 Warning: Pd = 0 is less than W. Warning: Ps = 0 is les

Circuit: *****Single NMOS Transistor For BSIM3V3.1 general purpose check (Id-Vd) *** Doing analysis at TEMP = 218.150000 and TNOM = 300.150000 Warning: Pd = 0 is less than W. Warning: Ps = 0 is les

No. of Data Rows : 568 Circuit: *****Single NMOS Transistor For BSIM3V3 general purpose check (Id-Vd) *** Doing analysis at TEMP = 373.150000 and TNOM = 300.150000 Warning: Pd = 0 is less than W.

No. of Data Rows : 568 Circuit: *****Single NMOS Transistor For BSIM3V3 general purpose check (Id-Vd) *** Doing analysis at TEMP = 300.150000 and TNOM = 300.150000 Warning: Pd = 0 is less than W.

No. of Data Rows : 568 Circuit: *****Single NMOS Transistor For BSIM3V3 general purpose check (Id-Vd) *** Doing analysis at TEMP = 218.150000 and TNOM = 300.150000 Warning: Pd = 0 is less than W.

No. of Data Rows : 568 Circuit: *****Single NMOS Transistor For BSIM3V3 general purpose check (Id-Vd) *** Doing analysis at TEMP = 373.150000 and TNOM = 300.150000 Warning: Pd = 0 is less than W.