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Circuit 的代码
test1.out
Circuit: ** NMOSFET: Benchmarking Implementation of BSIM4 by Jane Xi 05/09/2003.
Doing analysis at TEMP = 300.150000 and TNOM = 300.150000
Warning: toxe, toxp and dtox all given and toxe != toxp + d
test13.out
Circuit: ** PMOSFET: Benchmarking Implementation of BSIM4 by Jane Xi 05/09/2003.
Doing analysis at TEMP = 218.150000 and TNOM = 300.150000
Warning: toxe, toxp and dtox all given and toxe != toxp + d
test11.out
Circuit: ** PMOSFET: Benchmarking Implementation of BSIM4 by Jane Xi 05/09/2003.
Doing analysis at TEMP = 300.150000 and TNOM = 300.150000
Warning: toxe, toxp and dtox all given and toxe != toxp + d
test14.out
Circuit: ** PMOSFET: Benchmarking Implementation of BSIM4 by Jane Xi 05/09/2003.
Doing analysis at TEMP = 373.150000 and TNOM = 300.150000
Warning: toxe, toxp and dtox all given and toxe != toxp + d
test4.out
Circuit: ** NMOSFET: Benchmarking Implementation of BSIM4 by Jane Xi 05/09/2003.
Doing analysis at TEMP = 300.150000 and TNOM = 300.150000
Warning: toxe, toxp and dtox all given and toxe != toxp + d
test2.out
Circuit: ** NMOSFET: Benchmarking Implementation of BSIM4 by Jane Xi 05/09/2003.
Doing analysis at TEMP = 218.150000 and TNOM = 300.150000
Warning: toxe, toxp and dtox all given and toxe != toxp + d
test.out
No. of Data Rows : 501
Circuit: Test of MOS BSIM1 implementation; DC transfer curve
Doing analysis at TEMP = 300.150000 and TNOM = 300.150000
Test of MOS BSIM1 implementation; DC tran
t4.out
No. of Data Rows : 1359
Circuit: *model = BSIMSOI (DD)
Doing analysis at TEMP = 300.150000 and TNOM = 300.150000
Warning: Pd = 0 is less than W.
Warning: Ps = 0 is less than W.
t5.out
No. of Data Rows : 1359
Circuit: *model = BSIMSOI (DD)
Doing analysis at TEMP = 300.150000 and TNOM = 300.150000
Warning: Pd = 0 is less than W.
Warning: Ps = 0 is less than W.
t4.out
No. of Data Rows : 1359
Circuit: *model = BSIMSOI (PD)
Doing analysis at TEMP = 300.150000 and TNOM = 300.150000
Warning: Pd = 0 is less than W.
Warning: Ps = 0 is less than W.