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开关电源 C9012数据手册
C9012 amplifier transistors PNP silicon.
This document describes the features of C9012 PNP silicon. You can check or search the characteristics of this transistor by this document and decide whether the transistor you need.
Further, this document is described in Chin ...
技术资料 场效应管基础知识
Field Effect Transistor的缩写,即为场效应晶体管。一般的晶体管是由两种极性的载流子,即多数载流子和反极性的少数载流子参与导电,因此称为双极型晶体管,而FET仅是由多数载流子参与导
电源技术 用于大功率IGBT的驱动电路
对大功率IGBT（Insulated Gate Bipolar Transistor，绝缘栅双极型晶体管）的开关特性、驱动波形、驱动功率、布线等方面进行了分析和讨论，介绍了一种用于大功率IGBT 的驱动电路。
文件格式 LTV350QV-F09 is a TMR(Transmissive with Micro Reflective) type color active matrix TFT (Thin Film T
LTV350QV-F09 is a TMR(Transmissive with Micro Reflective) type color active matrix
TFT (Thin Film Transistor) liquid crystal display (LCD) that uses amorphous silicon TFT
as a switching devices. This model is composed of a TFT-LCD module, a driver circuit
and a back-light unit and a touch screen pan ...
技术资料 OCP3601
General Description
The OCP3601 is a boost topology switching regulator control IC for battery-used applications field. The OCP3601 includes a totem-pole single output stage for driving NPN transistor or N-MOS, high precision reference (0.5V) for
comparing output voltage with feedback amplifier, ...
技术书籍 101-200晶体管电路集
This is the second half of our Transistor Circuits e-book. It contains a further 100 circuits, with many of them containing one or more Integrated Circuits (ICs).It's amazing what you can do with transistors but when Integrated Circuits came along, the whole field of electronics exploded.
技术资料 IGBT图解
le flows through MOS channel while Ih flows across PNP transistor Ih= a/(1-a) le, IE-le+lh=1/(1-a)' le Since IGBT has a long base PNP, a is mainly determined by ar si0 2ar= 1/cosh(1/La), La: ambipolar diff length a-0.5 (typical value)p MOSFET channel current (saturation), le=U"Cox"W(2"Lch)"(Vc-V ...
开关电源 9013数据手册
This document describes the features of 9013. You can check or search the characteristics of this transistor by this document and decide whether the transistor you need.
技术资料 BTS50_datasheet
The BTS5016SDA is a one channel high-side power switch in PG-TO252-5-11 package providing embedded
protective functions.
The power transistor is built by a N-channel vertical power MOSFET with charge pump. The design is based on
Smart SIPMOS chip on chip technology.
The BTS5016SDA has a current cont ...