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高通蓝牙芯片QCC5051详细规格书共有117页，开发人员必备手册  支持蓝牙标准 5.2 ->Quad-core processor architecture ->High-performance programmable Bluetooth stereo audio Soc ->Low power modes to extend battery life. ->Flexible flash programmable platform. ->For wired/wirelss ...

高通qualcommon蓝牙芯片QCC3056详细规格书共有112页，开发人员必备手册 支持蓝牙标准5.2 ->Quad-core processor architecture ->High-performance programmable Bluetooth mono audio Soc ->Low power modes to extend battery life. ->For Qualcomm TrueWirless stereo earbuds application.主要 ...

STM32L053C8T6数据手册Features • Ultra-low-power platform – 1.65 V to 3.6 V power supply – -40 to 125 °C temperature range – 0.27 µA Standby mode (2 wakeup pins) – 0.4 µA Stop mode (16 wakeup lines) – 0.8 µA Stop mode + RTC + 8 KB RAM retention – 139 µA/MHz Run mode at 32 MHz – 3.5 µs w ...

The PW5200A/ PW5200C is high efficiency synchronous, PWM step-up DC/DC converters optimizedto provide a high efficient solution to medium power systems. The devices work with a 1.4MHz fixedfrequency switching. These features minimize overall solution footprint by allowing the use of tiny,low profile ...

The PW4554 is a cost-effective, fully integrated high input voltage single-cell Li-ion battery charger.The charger uses a CC/CV charge profile required by Li-ion battery. The charger accepts an inputvoltage up to 24V but is disabled when the input voltage exceeds the OVP threshold, typically 6.8V,to ...

The PW4055 is a complete constant-current /constant-voltage linear charger for single cell lithiumion batteries.Its ThinSOT package and low external component count make the PW4055 ideallysuited for portable applications.Furthermore, the PW4055 is specifically designed to work within USBpower specif ...

The PW3130 series product is a high integration solution for lithium-lion/polymer batteryprotection.PW3130 contains advanced power MOSFET, high-accuracy voltage detection circuits anddelay circuits. PW3130 is put into an ultra-small SOT23-5 package and only one external componentmakes it an ideal so ...

The PW2606B is a front-end over voltage and over current protection device. It achieves wide inputvoltage range from 2.5VDC to 40VDC. The over voltage threshold can be programmed externally orset to internal default setting. The low resistance of integrated power path nFET switch ensures betterperfo ...

The PW2301A uses advanced trench It utilizes the latest processing techniques to achieve the highcell density and reduces the on-resistance with high repetitive avalanche rating. These featurescombine to make this design an extremely efficient and reliable device for use in power switchingapplicatio ...

The PW2202 is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planarTechnology which reduce the conduction loss, improve switching performance and enhance theavalanche energy. The transistor can be used in various power switching circuit for system