搜索结果
找到约 824 项符合
LOW-LEVEL 的查询结果
技术资料 NRF51822精简版NRF51802资料
nRF51802
Multiprotocol Bluetooth® low energy/2.4 GHz RF System on Chip
技术资料 DP转HDMI转换原理图
CH7525 is a low-cost, low-power semiconductor device that translates the DisplayPort signal to HDMI/DVI. This innovative DisplayPort receiver with an integrated HDMI Transmitter is specially designed to target the notebook/ultrabook, tablet device and PC market segments. Through the CH7525’s advanc ...
技术资料 ICN6202规格书V10
ICN6201/02 is a bridge chip which receives MIPI® DSI inputs and sends LVDS outputs.
MIPI® DSI supports up to 4 lanes and each lane operates at 1Gbps maximum; the totally maximum input
bandwidth is 4Gbps; and the MIPI defined ULPS(ultra-low-power state) is also supported. ICN6201 decodes
MIPI® ...
技术资料 时钟芯片RX8025T
RX-8801 SA Features built-in 32.768 kHz DTCXO, High Stability Supports l'C-Bus's high speed mode (400 kHz)Alarm interrupt function for day, date, hour, and minute settings Fixed-cycle timer interrupt function Time update interrupt function32.768 kHz output with OE function Auto correction of ...
技术资料 sony CMOS传感器 IMX385LQR-C DataSheet
DescriptionThe IMX385LQR-C is a diagonal 8.35 mm (Type 1/2) CMOS active pixel type solid-state image sensor with a squarepixel array and 2.13 M effective pixels. This chip operates with analog 3.3 V, digital 1.2 V, and interface 1.8 V triplepower supply, and has low power consumption. High sensitivi ...
技术资料 sony CMOS传感器 IMX178LQJ-C dataSheet
sony CMOS传感器datasheet,IMX178LQJ-C_Data_SheetDescriptionThe IMX178LQJ-C is a diagonal 8.92 mm (Type 1/1.8) CMOS active pixel type image sensor with a square pixelarray and 6.44 M effective pixels. This chip operates with analog 2.9 V, digital 1.2 V and interface 1.8 V triple powersupply, and has ...
技术资料 LDO环路分析及补偿
低压差线性稳压器(Low Dropout Voltage Regulator,LDO)属于线性稳压器的一种,但由于其压差较低,相对于一般线性稳压器而言具有较高的转换效率。但在电路稳定性上有所下降,而且LDO有着较高的输出电阻,使得输出极点的位置会随着负载情况有很大关系。因此需要对LDO进行频率补偿来满足其环路稳定性要求。内容安排上第一节 ...
技术资料 IGBT图解
le flows through MOS channel while Ih flows across PNP transistor Ih= a/(1-a) le, IE-le+lh=1/(1-a)' le Since IGBT has a long base PNP, a is mainly determined by ar si0 2ar= 1/cosh(1/La), La: ambipolar diff length a-0.5 (typical value)p MOSFET channel current (saturation), le=U"Cox"W(2"Lch)"(Vc-V ...
技术资料 无线局域网接收机射频前端集成电路设计
近年来,随着个人数据通信的发展,功能强大的便携式数据终端和多媒体终端得到了广泛的应用。为了实现用户在任何时间、任何地点均能实现数据通信的目标,要求传统的计算机网络由有线向无线、由固定向移动、由单一业务向多媒体发展,这一要求促进了无线局域网技术的发展。在互联网高速发展的今天,可以认为无线局域网将成为未 ...
技术资料 基于ldo白光led驱动集成电路设计论文
白光LED(White Light-Fmitting Diode)以其高效、节能、环保、寿命长、无污染等优点逐渐取代传统的白炽灯成为新一代照明光源。与此同时,与LED配套的驱动集成电路的研发也由LED的应用逐渐普及而得到长足的发展。本文对基于LDO(Low dropout voltage 1inear regulator)恒流型的白光LED驱动集成电路进行了设计分析。该驱动 ...