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软件 RVDS2.2破解工具

RealView Developer Suite v2.2 破解 (2009-12-11)  使用RealView Developer Suite v2.2,传说中的RVDS 2.2,破解也有问题,经过我琢磨。   破解步骤修改如下: 1)用generate产生license file (注意自己的系统时间   最好是真实的当前时间,如果时间比较旧的话,产生的license file 将不能注册。license ...
https://www.eeworm.com/dl/514017.html
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书籍 Structure and Geometry of Lie Groups

To locate the theory of Lie groups within mathematics, one can say that Lie groups are groups with some additional structure that permits us to apply analytic techniques such as differentiation in a group theoretic context.
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书籍 Modeling and Tools for Network Simulation

In general there are three different techniques for performance evaluation of systems and networks: mathematical analysis, measurements, and computer simulation. All these techniques have their strength and weaknesses. In the literature there are plenty of discussions about when to use which techniq ...
https://www.eeworm.com/dl/522007.html
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书籍 Radio Wave Propagation

One of the prerequisites for the development of telecommunication services is the understanding of the propagation of the waves, either acoustic, electromagnetic, radio or light waves, which are used for the transmission of information. In this work, we shall limit ourselves to the study of radio wa ...
https://www.eeworm.com/dl/522083.html
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书籍 Programming Your Hom

Welcome to the exciting, empowering world of home automation! If you have ever wanted your home to do more than just protect you against the outside elements and want to interface it to the digital domain, this book will show you how. By demonstrating several easy-to-build projects, you will be able ...
https://www.eeworm.com/dl/522295.html
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技术资料 TI反激变换器变压器设计相关资料

This Section covers the design of power transformers used in buck-derived topologies: forward converter, bridge, half-bridge, and full-wave centertap. Flyback transformers (actually coupled inductors) are covered in a later Section. For more specialized applications, the principles discussed herein ...
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技术资料 IGBT图解

le flows through MOS channel while Ih flows across PNP transistor Ih= a/(1-a) le, IE-le+lh=1/(1-a)' le Since IGBT has a long base PNP, a is mainly determined by ar si0 2ar= 1/cosh(1/La), La: ambipolar diff length a-0.5 (typical value)p MOSFET channel current (saturation), le=U"Cox"W(2"Lch)"(Vc-V ...
https://www.eeworm.com/dl/836047.html
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