power456.lib

开关电源的设计及仿真.rar

*---------------------------- END EXTERNAL PARASITICS OF DEVICE ---------------------------*
********************************************************************************************
********************************************************************************************
*                                                                                          *
*--------------------- DRAIN SOURCE CAPACITANCE AND BREAKDOWN CIRCUIT ---------------------*
DDS     9       11      DDS1     
RDIO    11      5       RDIO  0.0251     
*-------------------- END DRAIN SOURCE CAPACITANCE AND BREAKDOWN CIRCUIT ------------------*
*                                                                                          *
********************************************************************************************
********************************************************************************************
*                                                                                          *
*---------------------------- DRAIN GATE CAPACITANCE SIMULATOR ----------------------------*
*-------------------- FIRST SECTION FOR NON-LINEAR CGD INCLUDES FOLLOWING -----------------*
********************************************************************************************
*     VOLTAGE CONTROLLED SWITCHES CAN BE USED IN PLACE OF M2 AND M3 IN THE EVENT           *
*     THE SIMULATOR SUPPORTS VOLTAGE CONTROLLED SWITCHES.  USE OF VOLTAGE CONTROLLED       *
*     SWITCHES WILL REDUCE EXECUTION TIME FOR THIS MODEL                                   *
********************************************************************************************
*
DGD     6       4       DGD
RDGD    4       6       1E10
M2      6       4       1       100     MSW1                    
RSUB1   1       100     1E12
*----------------------------- LAST SECTION FOR CONSTANT CGD  -----------------------------*
CGDMAX  4       7       0.60E-9
RCGD    4       7       1E10
M3      7       4       1       101     MSW2
RSUB2   1       101     1E12        
*---------------------------- END GATE CAPACITANCE SIMULATOR ------------------------------*
*                                                                                          *
********************************************************************************************
********************************************************************************************
*                                                                                          *
*--------------------------- LEVEL 3 MOS MODEL CORE OF SUBCKT -----------------------------*
M1      2       1       3       9       MAIN    W=1.22  L=1E-6
*------------------------------ END LEVEL THREE MOS MODEL ---------------------------------*
*                                                                                          *
********************************************************************************************
*------------------------------ PARAMETER SETS FOR MODELS ---------------------------------*
.MODEL   MSW1    NMOS    (LEVEL = 1         VTO  = 0       KP    = 1                       )
.MODEL   MSW2    PMOS    (LEVEL = 1         VTO  = 0       KP    = 1                       )
.MODEL   MAIN    NMOS    (LEVEL = 3                 TOX    = 1E-7               
+ NSUB   = 4.5612E14       VTO    = 1.803           PHI    = 0.6                
+ UO     = 158.17          KAPPA  = 0               NFS    = 4.256081E11                   )  
.MODEL   DDS1   D        (                          IS     = 5.400306E-11       
+ N      = 1.1855231       BV     = 60.00           IBV    = 0.001          
+ EG     = 1.1435          XTI    = 2.529           TT     = 1E-9            
+ CJO    = 6.090755E-10    VJ     = 0.4851704       M      = 0.3716474       
* FC     = 0.5                                                                             )
.MODEL   DGD    D        (                          CJO    = 0.54E-09 
+ VJ     = 0.350           M      = 0.650           FC     = 0.5                           )
.MODEL   RD     RES      ( TC1    = 13.8374E-3      TC2    = 6.38887E-5                    )
.MODEL   RS     RES      ( TC1    = -4.71836E-3     TC2    = -1.39768E-5                   )
.MODEL   RDIO   RES      ( TC1    = 1.560642E-3     TC2    = 4.60643E-6                    )
.ENDS
**************
.model mbrs140t3 d
+ is= 4.41547e-06
+ rs= 0.103922
+ n= 1.03751
+ tt= 1e-12
+ cjo= 1.598e-10
+ vj= 0.4934
+ m= 0.4258
+ eg= 0.6
+ xti= 3.29768
+ fc= 0.5
+ bv= 48
+ ibv= 0.01
+ kf= 0
+ af= 1
********
.subckt mtp4n50/mc 10 20 30 
*
**************************************
*      Model Generated by MODPEX     *
*Copyright(c) Symmetry Design Systems*
*         All Rights Reserved        *
*    UNPUBLISHED LICENSED SOFTWARE   *
*   Contains Proprietary Information *
*      Which is The Property of      *
*     SYMMETRY OR ITS LICENSORS      *
*Commercial Use or Resale Restricted *
*   by Symmetry License Agreement    *
**************************************
* Model generated on Feb 12, 98
* MODEL FORMAT: PSpice
* Symmetry POWER MOS Model (Version 1.0)
* External Node Designations
* Node 1 -> Drain
* Node 2 -> Gate
* Node 3 -> Source
* 10 = Drain 20 = Gate 30 = Source
*
******************************************************************************
*
*------------------------ EXTERNAL PARASITICS --------------------------------
* PACKAGE INDUCTANCE
*
LDRAIN  10  11  4.5e-09
LGATE   20  21  7.5e-09
LSOURCE 30  31  7.5e-09
*
* RESISTANCES
*
RDRAIN1    4  11 RDRAIN 1.077
RDRAIN2    4   5 RDRAIN 0.2692
RSOURCE   31   6 RSOURCE 0.03  
RDBODY     8  30 RDBODY  0.02132
*
RGATE      21   2 10
*
*--------------------------------------------------------------------------
*
*--------------- CAPACITANCES AND BODY DIODE ------------------------------
*
DBODY       8  11 DBODY
DGD         3  11 DGD
CGDMAX      2   3 2e-09
RGDMAX      2   3 1e+08
CGS         2   6 7e-10 
*
*--------------------------------------------------------------------------
*
*----------------------- CORE MOSFET --------------------------------------
*
M1       5  2  6  6  MAIN
*
*--------------------------------------------------------------------------
*
.MODEL RDRAIN RES  (
+TC1    = 0.008365
+TC2    = 1.582e-05)
*
.MODEL RSOURCE RES  (
+TC1    = -0.002385
+TC2    = 3.04052e-05)
*
.MODEL RDBODY RES  (
+TC1    = 0.002158
+TC2    = 3.1623e-06)
*
*
.MODEL MAIN NMOS  ( 
+LEVEL   = 3
+VTO     = 3.867
+KP      = 6.624
+GAMMA   = 3
+PHI     = 0.6
+LAMBDA  = 0.001834
+RD      = 0
+RS      = 0
+CBD     = 0
+CBS     = 0
+IS      = 1e-14
+PB      = 0.8
+CGSO    = 0
+CGDO    = 0
+CGBO    = 0
+RSH     = 0
+CJ      = 0
+MJ      = 0.5
+CJSW    = 0
+MJSW    = 0.33
+JS      = 1e-14
+TOX     = 1e-07
+NSUB    = 1e+15
+NSS     = 0
+NFS     = 6.712e+11
+TPG     = 1
+XJ      = 0
+LD      = 0
+UO      = 600
+UCRIT   = 1000
+UEXP    = 0
+UTRA    = 0
+VMAX    = 0
+NEFF    = 1
+KF      = 0
+AF      = 1
+FC      = 0.5
+DELTA   = 0
+THETA   = 0
+ETA     = 0
+KAPPA   = 0.2)
*
*--------------------------------------------------------------------------
*
.MODEL DGD D  ( 
+IS      = 1e-15
+RS      = 0
+N       = 1000
+TT      = 0
+CJO     = 6.282e-10
+VJ      = 1.373
+M       = 1.166
+EG      = 1.11
+XTI     = 3
+KF      = 0
+AF      = 1
+FC      = 0.5
+BV      = 10000
+IBV     = 0.001)
*
*--------------------------------------------------------------------------
*
.MODEL DBODY D  ( 
+IS      = 5.639e-12
+RS      = 0
+N       = 1.055
+TT      = 2e-07
+CJO     = 5.616e-10
+VJ      = 1
+M       = 0.6261
+EG      = 1.11
+XTI     = 3.5
+KF      = 0
+AF      = 1
+FC      = 0.5
+BV      = 569.1
+IBV     = 0.00025)
.ENDS
********
.subckt mtp8n50e 10 20 30
**************************************
*      Model Generated by MODPEX     *
*Copyright(c) Symmetry Design Systems*
*         All Rights Reserved        *
*    UNPUBLISHED LICENSED SOFTWARE   *
*   Contains Proprietary Information *
*      Which is The Property of      *
*     SYMMETRY OR ITS LICENSORS      *
*Commercial Use or Resale Restricted *
*   by Symmetry License Agreement    *
**************************************
* Model generated on Feb 12, 98
* MODEL FORMAT: PSpice
* Symmetry POWER MOS Model (Version 1.0)
* External Node Designations
* Node 1 -> Drain
* Node 2 -> Gate
* Node 3 -> Source
*
* 10 = Drain 20 = Gate 30 = Source
*
******************************************************************************
*
*------------------------ EXTERNAL PARASITICS --------------------------------
* PACKAGE INDUCTANCE
*
LDRAIN  10  11  4.5e-09
LGATE   20  21  7.5e-09
LSOURCE 30  31  7.5e-09
*
* RESISTANCES
*
RDRAIN1    4  11 RDRAIN 0.594
RDRAIN2    4   5 RDRAIN 0.001
RSOURCE   31   6 RSOURCE 0.025  
RDBODY     8  30 RDBODY  0.0131
*
RGATE      21   2 5
*
*--------------------------------------------------------------------------
*
*--------------- CAPACITANCES AND BODY DIODE ------------------------------
*
DBODY       8  11 DBODY
DGD         3  11 DGD
CGDMAX      2   3 2.5e-09
RGDMAX      2   3 1e+08
CGS         2   6 1.29e-09 
*
*--------------------------------------------------------------------------
*
*----------------------- CORE MOSFET --------------------------------------
*
M1       5  2  6  6  MAIN
*
*--------------------------------------------------------------------------
*
.MODEL RDRAIN RES  (
+TC1    = 0.009715
+TC2    = 3.866e-05)
*
.MODEL RSOURCE RES  (
+TC1    = 0
+TC2    = 0)
*
.MODEL RDBODY RES  (
+TC1    = 0.003858
+TC2    = 5.974e-06)
*
*
.MODEL MAIN NMOS  ( 
+LEVEL   = 3
+VTO     = 4.1
+KP      = 14
+GAMMA   = 3
+PHI     = 0.6
+LAMBDA  = 0.001982
+RD      = 0
+RS      = 0
+CBD     = 0
+CBS     = 0
+IS      = 1e-14
+PB      = 0.8
+CGSO    = 0
+CGDO    = 0
+CGBO    = 0
+RSH     = 0
+CJ      = 0
+MJ      = 0.5
+CJSW    = 0
+MJSW    = 0.33
+JS      = 1e-14
+TOX     = 1e-07
+NSUB    = 1e+15
+NSS     = 0
+NFS     = 7.071e+11
+TPG     = 1
+XJ      = 0
+LD      = 0
+UO      = 600
+UCRIT   = 1000
+UEXP    = 0
+UTRA    = 0
+VMAX    = 0
+NEFF    = 1
+KF      = 0
+AF      = 1
+FC      = 0.5
+DELTA   = 0
+THETA   = 0
+ETA     = 0
+KAPPA   = 0.2)
*
*--------------------------------------------------------------------------
*
.MODEL DGD D  ( 
+IS      = 1e-15
+RS      = 0
+N       = 1000
+TT      = 0
+CJO     = 1.166e-09
+VJ      = 1.093
+M       = 0.9941
+EG      = 1.11
+XTI     = 3
+KF      = 0
+AF      = 1
+FC      = 0.5
+BV      = 10000
+IBV     = 0.001)
*
*--------------------------------------------------------------------------
*
.MODEL DBODY D  ( 
+IS      = 1.053e-11
+RS      = 0
+N       = 1.052
+TT      = 2.5e-07
+CJO     = 1.032e-09
+VJ      = 1
+M       = 0.6441
+EG      = 1.11
+XTI     = 4.9
+KF      = 0
+AF      = 1
+FC      = 0.5
+BV      = 569.1
+IBV     = 0.00025)
.ENDS
*** The below model was downloaded from International-Rectifier web site: www.irf.com ***
.SUBCKT irfp044n 1 2 3
**************************************
*      Model Generated by MODPEX     *
*Copyright(c) Symmetry Design Systems*
*         All Rights Reserved        *
*    UNPUBLISHED LICENSED SOFTWARE   *
*   Contains Proprietary Information *
*      Which is The Property of      *
*     SYMMETRY OR ITS LICENSORS      *
*Commercial Use or Resale Restricted *
*   by Symmetry License Agreement    *
**************************************
* Model generated on Apr 24, 96
* Model format: SPICE3
* Symmetry POWER MOS Model (Version 1.0)
* External Node Designations
* Node 1 -> Drain
* Node 2 -> Gate
* Node 3 -> Source
M1 9 7 8 8 MM L=100u W=100u
* Default values used in MM:
* The voltage-dependent capacitances are
* not included. Other default values are:
*   RS=0 RD=0 LD=0 CBD=0 CBS=0 CGBO=0
.MODEL MM NMOS LEVEL=1 IS=1e-32
+VTO=3.81531 LAMBDA=0 KP=35.6687
+CGSO=1.40569e-05 CGDO=3.21208e-07
RS 8 3 0.0143504
D1 3 1 MD
.MODEL MD D IS=6.65214e-09 RS=0.00681888 N=1.44936 BV=55
+IBV=0.00025 EG=1 XTI=2.81713 TT=1e-07
+CJO=1.32544e-09 VJ=1.29661 M=0.493619 FC=0.5
RDS 3 1 2.2e+06
RD 9 1 0.0001
RG 2 7 4.21415
D2 4 5 MD1
* Default values used in MD1:
*   RS=0 EG=1.11 XTI=3.0 TT=0
*   BV=infinite IBV=1mA
.MODEL MD1 D IS=1e-32 N=50
+CJO=1.5055e-09 VJ=0.5 M=0.677697 FC=1e-08
D3 0 5 MD2
* Default values used in MD2:
*   EG=1.11 XTI=3.0 TT=0 CJO=0
*   BV=infinite IBV=1mA
.MODEL MD2 D IS=1e-10 N=0.426578 RS=3e-06
RL 5 10 1
FI2 7 9 VFI2 -1
VFI2 4 0 0
EV16 10 0 9 7 1
CAP 11 10 1.86655e-09
FI1 7 9 VFI1 -1
VFI1 11 6 0
RCAP 6 10 1
D4 0 6 MD3
* Default values used in MD3:
*   EG=1.11 XTI=3.0 TT=0 CJO=0
*   RS=0 BV=infinite IBV=1mA
.MODEL MD3 D IS=1e-10 N=0.426578
.ENDS
**********
.MODEL MBR20100 D
+IS=0.000210108 RS=0.0123882 N=2 EG=0.817576
+XTI=0.500001 BV=1000 IBV=0.0001 CJO=1e-11
+VJ=0.7 M=0.5 FC=0.5 TT=0
+KF=0 AF=1
**********