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📄 power456.lib

📁 开关电源的设计及仿真.rar
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* VLOW		; minimum output voltage
* ISINK		; sink capability
* ISOURCE	; source capability
* POLE		; first pole in Hertz
* GAIN		; DC open-loop gain (default=90dB)
***********************************************
.PARAM VP = { (VLOW*DUTYMAX-VHIGH*DUTYMIN+VHIGH-VLOW)/(DUTYMAX-DUTYMIN) }	; valley ramp voltage
.PARAM VV = { (VLOW-DUTYMIN*VP)/(1-DUTYMIN)}								; peak ramp voltage
XERR 10 4 3 2 ERRAMP PARAMS:	VHIGH={VHIGH} ISINK={ISINK} ISOURCE={ISOURCE} ; error amplifier
+VLOW={VLOW} POLE={POLE} GAIN={GAIN}
VREF 10 2 {REF}					; reference voltage
VRAMP 16 2 PULSE {VV} {VP} 0 {PERIOD-2N} 1N 1N {PERIOD} ; comparison ramp
XCOM1 16 3 18 COMP				; PWM comparator
XCOM2 5 19 12 COMP				; I limit comparator
VLIMT 19 2 {IMAX}				; I limit level (Max voltage upon external sense resistor)
XOR2 12 18 20 OR2				; Reset by IMAX OR PWM
XFFL 20 11 14 13 FFLOP				; flip-flop
RDUM 13 2 1MEG
VCLK 11 2 PULSE 0 5 0 1N 1N 10N {PERIOD}	; Clock set pulses
XNOR1 301 14 303 NOR2
XNOR2 300 14 304 NOR2
XFFL2 14 300 2 2 300 301 TOGGLE
E_BOUT1 25 8 VALUE = { IF ( V(303) > 3.5, {VOUTHI}, {VOUTLO} ) }
ROUT1 25 1 {ROUT}							; Output resistor 1
RDUMF1 8 2 10MEG
E_BOUT2 250 2 VALUE = { IF ( V(304) > 3.5, {VOUTHI}, {VOUTLO} ) }
ROUT2 250 7 {ROUT}						; Output resistor 2
E_BOUT3 255 36 VALUE = { IF ( V(304) > 3.5, {VOUTHI}, {VOUTLO} ) }
ROUT3 255 9 {ROUT}						; Output resistor 3
RDUMF3 36 2 10MEG
E_BOUT4 256 2 VALUE = { IF ( V(303) > 3.5, {VOUTHI}, {VOUTLO} ) }
ROUT4 256 15 {ROUT}
.ENDS FULL_VM
*$
**** ERROR AMPLIFIER MODEL ****
.SUBCKT ERRAMP 20 8  3  21 PARAMS: ISINK= 15M, ISOURCE=500U, VHIGH=2.8, VLOW=100M, POLE=30, GAIN=31622
*   	       +  - OUT GND
RIN 20 8 8MEG
CP1 11 21 {1/(6.28*(GAIN/100U)*POLE)}
E1 5 21 11 21 1
R9 5 2 5
D14 2 13 DMOD
IS 13 21 {ISINK/100}	; mA
Q1 21 13 16 QPMOD
ISRC 7 3 {ISOURCE}		; uA
D12 3 7 DMOD
D15 21 11 DCLAMP
G1 21 11 20 8 100U
V1 7 21 {VHIGH-0.6V}
V4 3 16 {VLOW-38MV}
RP1 11 21 {GAIN/100U}
.MODEL QPMOD PNP
.MODEL DCLAMP D (RS=10 BV=10 IBV=0.01)
.MODEL DMOD D (TT=1N CJO=10P)
.ENDS ERRAMP
*$
**** 2 INPUT COMPARATOR ****
.SUBCKT COMP 1 2 3
*            + - S
E_B1 4 0 VALUE = { IF ( V(1) > V(2), 5V, 0 ) }
RD 4 3 100
CD 3 0 10P
.ENDS COMP
*$
**** 2 INPUT OR CIRCUIT ****
.SUBCKT OR2 1 2 3
E_B1 4 0 VALUE = { IF ( (V(1)>800M) | (V(2)>800M), 5V, 0 ) }
RD 4 3 100
CD 3 0 10P
.ENDS OR2
*$
****
**** 2 INPUT NOR CIRCUIT ****
.SUBCKT NOR2 1 2 3
E_B1 4 0 VALUE = { IF ( (V(1)>800M) | (V(2)>800M), 0, 5V ) }
RD 4 3 100
CD 3 0 10P
.ENDS NOR2
*$
****
.SUBCKT FFLOP 6 8 2 1
*             S R Q Q\
E_BQB 10 0 VALUE = { IF ( (V(8)<800M) & (V(2)>800M), 0, 5V ) }
E_BQ  20 0 VALUE = { IF ( (V(6)<800M) & (V(1)>800M), 0, 5V ) }
RD1   10 1 100
CD1   1 0 10P IC=5
RD2   20 2 100
CD2   2 0 10P IC=0
.ENDS FFLOP
*$
**** 2 INPUT AND CIRCUIT ****
.SUBCKT AND2 1 2 3
E_B1 4 0 VALUE = { IF ( (V(1)>800M) & (V(2)>800M), 5V, 0 ) }
RD 4 3 100
CD 3 0 100P
.ENDS AND2
*$
****
.SUBCKT NAND3_0 1 2 3 4
E_B1 5 0 VALUE = { IF ( (V(1)>800M) & (V(2)>800M) & (V(3)>800M), 0V, 5V ) }
R1 5 4 400
C1 4 0 20P IC=0
.ENDS NAND3_0
*$
*****
.SUBCKT NAND3_1 1 2 3 4
E_B1 5 0 VALUE = { IF ( (V(1)>800M) & (V(2)>800M) & (V(3)>800M), 0V, 5V ) }
R1 5 4 400
C1 4 0 20P IC=5
.ENDS NAND3_1
*$
*****
.SUBCKT INV 1 2
E_B1 3 0 VALUE = { IF ( V(1)>800M, 0, 5V ) }
R1 3 2 100
C1 2 0 10P IC=5
.ENDS INV
*$
**** TOGGLE CIRCUIT ****
.SUBCKT TOGGLE 1  2 11 12 5  6
*            CLK D R  S  QB Q 
X1 7 4 2 8 NAND3_0
X2 8 3 10 9 NAND3_0
X3 1 8 10 7 NAND3_1
X4 4 9 1 10 NAND3_0
X5 4 7 6 5 NAND3_1
X6 5 10 3 6 NAND3_0
X7 11 4 INV
X8 12 3 INV
.ENDS TOGGLE
*$
**** MULTI-WINDING TRANSFORMER ****
.SUBCKT XFMR2 1 2 3 4 10 11 PARAMS: RATIO1=1 RATIO2=1
RP 1 2 1MEG
E1 5 4 VALUE = { V(1,2)*RATIO1 }
G1 1 2 VALUE = { I(VM1)*RATIO1 }
RS1 6 3 1U
VM1 5 6
E2 20 11 VALUE = { V(2,1)*RATIO2 }
G2 2 1 VALUE = { I(VM2)*RATIO2 }
RS2 21 10 1U
VM2 20 21 
.ENDS XFMR2
*$
**** SINGLE WINDING TRANSFORMER ****
.SUBCKT XFMR1 1 2 3 4 PARAMS: RATIO=1
RP 1 2 1MEG
E 5 4 VALUE = { V(1,2)*RATIO }
G 1 2 VALUE = { I(VM)*RATIO }
RS 6 3 1U
VM 5 6
.ENDS XFMR1
********
.SUBCKT irf7413 1 2 3
**************************************
*      Model Generated by MODPEX     *
*Copyright(c) Symmetry Design Systems*
*         All Rights Reserved        *
*    UNPUBLISHED LICENSED SOFTWARE   *
*   Contains Proprietary Information *
*      Which is The Property of      *
*     SYMMETRY OR ITS LICENSORS      *
*Commercial Use or Resale Restricted *
*   by Symmetry License Agreement    *
**************************************
* Model generated on Apr 23, 96
* Model format: SPICE3
* Symmetry POWER MOS Model (Version 1.0)
* External Node Designations
* Node 1 -> Drain
* Node 2 -> Gate
* Node 3 -> Source
M1 9 7 8 8 MM L=100u W=100u
RS 8 3 0.00853462
D1 3 1 MD
RDS 3 1 2.4e+07
RD 9 1 0.0001
RG 2 7 6.86824
D2 4 5 MD1
D3 0 5 MD2
RL 5 10 1
FI2 7 9 VFI2 -1
VFI2 4 0 0
EV16 10 0 9 7 1
CAP 11 10 1.28e-09
FI1 7 9 VFI1 -1
VFI1 11 6 0
RCAP 6 10 1
D4 0 6 MD3
.MODEL MD3 D IS=1e-10 N=0.4
.MODEL MD D IS=7.69994e-08 RS=0.0402311 N=1.5 BV=30
+IBV=0.00025 EG=1.06591 XTI=3.99512 TT=1e-07
+CJO=2.25643e-09 VJ=0.5 M=0.420315 FC=0.1
.MODEL MD1 D IS=1e-32 N=50
+CJO=1.28e-09 VJ=2.11133 M=0.9 FC=1e-08
.MODEL MD2 D IS=1e-10 N=0.4 RS=3.00001e-06
.MODEL MM NMOS LEVEL=1 IS=1e-32
+VTO=2.66432 LAMBDA=0.0048933 KP=89.0396
+CGSO=1.68868e-05 CGDO=1.33184e-06
.ENDS irf7413
*$
.MODEL mbrs20100 d
+IS=0.000210108 RS=0.0123882 N=2 EG=0.817576
+XTI=0.500001 BV=1000 IBV=0.0001 CJO=1e-11
+VJ=0.7 M=0.5 FC=0.5 TT=0
+KF=0 AF=1
**********
.SUBCKT XFMR-TAP 1 2 3 4 5 PARAMS: RATIO=3.91
E1 7 8 VALUE = { V(1,2)*RATIO }
G1 1 2 VALUE = { I(VM1)*RATIO }
RP 1 2 1MEG
RS 6 3 1U
VM1 7 6
E2 9 5 VALUE = { V(1,2)*RATIO }
G2 1 2 VALUE = { I(VM2)*RATIO }
R5 8 4 1U
VM2 9 8
.ENDS XFMR-TAP
*********
.MODEL mbrs340t3 d
+IS=0.000182183 RS=0.0312608 N=1.40283 EG=0.576586
+XTI=0.000499955 BV=1000 IBV=0.0001 CJO=4.92728e-10
+VJ=0.573693 M=0.464284 FC=0.5 TT=1e-09
+KF=0 AF=1
**********
.MODEL 1n5388a d 
+BV=197.7 CJO=38.7P 
+IBV=5M IS=165P M=.33
+N=1 RS=475 TT=50.1N VJ=1
**********
.MODEL 1n5820 d 
+IS=88U N=1.29 BV=2.00E+01 
+IBV=300E-06 RS=2.54E-02 
+CJO=5.99E-10 VJ=4.698 M=.514 
+TT=2.16E-11 XTI=2 EG=.69
**********
.MODEL mur160 d 
+IS=1.08U RS=55.5M 
+N=2.59 BV=800 IBV=5U
+CJO=15.7P VJ=.75 M=.310 TT=108N
*** The below MOSFET models were downloaded from ON Semiconductor web site: www.onsemi.com ***
.subckt mtp6n60/mc 10 20 30 
*******************************************************************************
*                                                                             *
*                                                                             *
*                                                                             *
*        #############################################################        *
*        #                                                           #        *
*        #                        MTP6N60E                           #        *
*        #                                                           #        *
*        #                 Motorola TMOS Power FET                   #        *
*        #                        6 AMPERES                          #        *
*        #                        600 VOLTS                          #        *
*        #                     RDS(on) = 1.2 OHMS                    #        *
*        #                     Package = TO-220AB                    #        * 
*        #                                                           #        *
*        #               This model was developed by                 #        *
*        #                      Analogy, Inc.                        #        *
*        #                    9205 SW Gemini Dr.                     #        *
*        #                   Beaverton, OR  97005                    #        *
*        #               Copyright 1994 Analogy, Inc.                #        *
*        #                  All Rights Reserved                      #        *
*        #                                                           #        *
*        #    The content of this model is subject to change         #        *
*        #    without notice and may not be modified or altered      #        *
*        #    without permission from Motorola, Inc.  This model     #        *
*        #    has been carefully checked and is believed to be       #        *
*        #    accurate, however neither Analogy nor Motorola         #        *
*        #    assume liability for the use of this model or the      #        *
*        #    results obtained from using it.                        #        *
*        #                                                           #        *
*        #    For more information regarding modeling services,      #        *
*        #    model libraries or simulation products, please         #        *
*        #    Analogy, Inc. (503) 626-9700.                          #        *
*        #                                                           #        *
*        #############################################################        *
*                                                                             *
*                                                                             *
*                                                                             *
*******************************************************************************
*
* 10 = Drain 20 = Gate 30 = Source
*
******************************************************************************
*
*------------------------ EXTERNAL PARASITICS --------------------------------
* PACKAGE INDUCTANCE
*
LDRAIN  10  11  4.5e-09
LGATE   20  21  7.5e-09
LSOURCE 30  31  7.5e-09
*
* RESISTANCES
*
RDRAIN1    4  11 RDRAIN 0.8036
RDRAIN2    4   5 RDRAIN 0.0084
RSOURCE   31   6 RSOURCE 0.02018  
RDBODY     8  30 RDBODY  0.0135
*
RGATE      21   2 5
*
*--------------------------------------------------------------------------
*
*--------------- CAPACITANCES AND BODY DIODE ------------------------------
*
DBODY       8  11 DBODY
DGD         3  11 DGD
CGDMAX      2   3 2.7e-09
RGDMAX      2   3 1e+08
CGS         2   6 1.31e-09 
*
*--------------------------------------------------------------------------
*
*----------------------- CORE MOSFET --------------------------------------
*
M1       5  2  6  6  MAIN
*
*--------------------------------------------------------------------------
*
.MODEL RDRAIN RES  (
+TC1    = 0.008891
+TC2    = 3.056e-05)
*
.MODEL RSOURCE RES  (
+TC1    = -0.003198
+TC2    = 2.60004e-05)
*
.MODEL RDBODY RES  (
+TC1    = 0.003945
+TC2    = 9.54752e-06)
*
*
.MODEL MAIN NMOS  ( 
+LEVEL   = 3
+VTO     = 3.8
+KP      = 13
+GAMMA   = 2.6
+PHI     = 0.6
+LAMBDA  = 0.0019
+RD      = 0
+RS      = 0
+CBD     = 0
+CBS     = 0
+IS      = 1e-14
+PB      = 0.8
+CGSO    = 0
+CGDO    = 0
+CGBO    = 0
+RSH     = 0
+CJ      = 0
+MJ      = 0.5
+CJSW    = 0
+MJSW    = 0.33
+JS      = 1e-14
+TOX     = 1e-07
+NSUB    = 1e+15
+NSS     = 0
+NFS     = 6.59e+11
+TPG     = 1
+XJ      = 0
+LD      = 0
+UO      = 600
+UCRIT   = 1000
+UEXP    = 0
+UTRA    = 0
+VMAX    = 0
+NEFF    = 1
+KF      = 0
+AF      = 1
+FC      = 0.5
+DELTA   = 0
+THETA   = 0
+ETA     = 0
+KAPPA   = 0.2)
*
*--------------------------------------------------------------------------
*
.MODEL DGD D  ( 
+IS      = 1e-15
+RS      = 0
+N       = 1000
+TT      = 0
+CJO     = 1.129e-09
+VJ      = 1.943
+M       = 1.476
+EG      = 1.11
+XTI     = 3
+KF      = 0
+AF      = 1
+FC      = 0.5
+BV      = 10000
+IBV     = 0.001)
*
*--------------------------------------------------------------------------
*
.MODEL DBODY D  ( 
+IS      = 1.532e-11
+RS      = 0
+N       = 1.062
+TT      = 2.5e-07
+CJO     = 9.725e-10
+VJ      = 1.127
+M       = 0.6627
+EG      = 1.11
+XTI     = 5
+KF      = 0
+AF      = 1
+FC      = 0.5
+BV      = 671
+IBV     = 0.00025)
.ENDS
************
.SUBCKT MTP3055E/MC      10 20 30
*                         |  |  |
*                         |  |  SOURCE
*                         |  GATE
*                         DRAIN
********************************************************************************************
*                                                                                          *
*                     #################################################                    *
*                     #                                               #                    *
*                     #           MTP3055EL BY MOTOROLA               #                    *
*                     #                                               #                    *
*                     #           MODEL DEVELOPED BY                  #                    *
*                     #           ALLIANCE TECHNOLOGIES               #                    *
*                     #           10510 RESEARCH RD SE                #                    *
*                     #           ALBUQUERQUE  NM 87123               #                    *
*                     #           (505) 299-9591                      #                    *
*                     #           07-28-93 A. NUNEZ                   #                    *
*                     #                                               #                    *
*                     #################################################                    *
*                                                                                          *
********************************************************************************************
********************************************************************************************
*                                                                                          *
*------------------------------ EXTERNAL PARASITICS OF DEVICE -----------------------------*
RD1     2       4       RD  17.5E-03 
RD2     4       5       RD  17.5E-03 
RS      3       9       RS  34.2E-03 
RG      1       8       17
LD      5       10      3.5E-09
LG      8       20      7.5E-09
LS      9       30      7.5E-09
********************************************************************************************                                                                                          

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