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[电子线路模拟仿真软件].TINA.Pro.V.6.Educational-141M.zip

R2 91 94 1
D2 94 0 DLIM
LE 73 74 7.5N
DLV 94 95 DR 9
RLV 95 0 1
ESD 96 93 POLY(1) 83 81 5 1
MLV 95 96 93 93 SW
.MODEL SW NMOS (LEVEL=3 VTO=0 KP=5)
.MODEL QOUT PNP (IS=1.12E-18 NF=1.2 BF=5.1 CJE=11.1N
+ CJC=1.01N VJC=1 MJC=0.82 TF=42.5N XTB=1.3)
.MODEL MFIN NMOS (LEVEL=3 VMAX=705K THETA=43.6M ETA=625U VTO=5.5 KP=1.78)
.MODEL DR D (IS=1.12E-19 CJO=1.01N VJ=1 M=0.82)
.MODEL DO D (IS=7.9N RS=56.7M N=1.4 TT=101N BV=1.2K IBV=250U)
.MODEL DLIM D (IS=100N)
.ENDS
**********
*SRC=20M10JLL;20M10JLL;MOSFETs N;Power >100V;APT 200V 185A 0.01ohm ISOTOP
*SYM=POWMOSN
.SUBCKT 20M10JLL 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 3.75M
RS 40 3 1.25M
RG 20 2 0.811
CGS 2 3 12.5N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 4.2N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.5N
.MODEL DMOS NMOS (LEVEL=3 VMAX=417K THETA=58.1M ETA=81.1U VTO=3.1 KP=104)
.MODEL DCGD D (CJO=4.2N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=768N N=1.5 RS=2.97M BV=200 CJO=17.2N VJ=0.8 M=0.42 TT=460N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=20M13PVR;20M13PVR;MOSFETs N;Power >100V;APT 200V 146A 0.013ohm P-PACK
*SYM=POWMOSN
.SUBCKT 20M13PVR 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 5.17M
RS 40 3 1.32M
RG 20 2 1.03
CGS 2 3 16.6N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 17.3N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.5N
.MODEL DMOS NMOS (LEVEL=3 VMAX=417K THETA=58.1M ETA=103U VTO=3.1 KP=132)
.MODEL DCGD D (CJO=17.3N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=606N N=1.5 RS=5.14M BV=200 CJO=11.8N VJ=0.8 M=0.42 TT=460N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=5020BLC;5020BLC;MOSFETs N;Power >100V;APT 500V 26A 0.2ohm TO-247
*SYM=POWMOSN
.SUBCKT 5020BLC 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 94M
RS 40 3 6M
RG 20 2 6.33
CGS 2 3 2.4N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 1.28N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 6N
.MODEL DMOS NMOS (LEVEL=3 VMAX=1.04MEG THETA=45M ETA=577U VTO=4 KP=36.4)
.MODEL DCGD D (CJO=1.28N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=108N N=1.5 RS=21.2M BV=500 CJO=1.81N VJ=0.8 M=0.42 TT=480N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=60M75JVR;60M75JVR;MOSFETs N;Power >100V;APT 600V 62A 0.075ohm SOT-227
*SYM=POWMOSN
.SUBCKT 60M75JVR 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 34.6M
RS 40 3 2.88M
RG 20 2 2.42
CGS 2 3 15.7N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 9.63N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.5N
.MODEL DMOS NMOS (LEVEL=1 LAMBDA=355U VTO=3.1 KP=145)
.MODEL DCGD D (CJO=9.63N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=257N N=1.5 RS=8.87M BV=600 CJO=4.95N VJ=0.8 M=0.42 TT=880N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=5014SLL;5014SLL;MOSFETs N;Power >100V;APT 500V 35A 0.125ohm D3 pack
*SYM=POWMOSN
.SUBCKT 5014SLL 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 58.4M
RS 40 3 4.12M
RG 20 2 4.29
CGS 2 3 3.35N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 680P
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.5N
.MODEL DMOS NMOS (LEVEL=3 VMAX=1.04MEG THETA=45M ETA=1.29M VTO=4 KP=96.7)
.MODEL DCGD D (CJO=680P VJ=0.6 M=0.68)
.MODEL DSUB D (IS=145N N=1.5 RS=14.3M BV=500 CJO=2.78N VJ=0.8 M=0.42 TT=500N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=ARF464A/B;ARF464A/B;MOSFETs N;Power >100V;APT 200V 15A 0.65ohm TO-247CS
*SYM=POWMOSN
.SUBCKT ARF464A/B 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 0.308
RS 40 3 17.2M
LG 20 19 9N
RG 19 2 1
LG 4 2 9N
CGS 2 3 590P
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 1.28N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 5.5N
.MODEL DMOS NMOS (LEVEL=3 VMAX=417K THETA=45M ETA=2M VTO=4 KP=1.12)
.MODEL DCGD D (CJO=1.28N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=62.3N N=1.5 RS=30M BV=200 CJO=516P VJ=0.8 M=0.42 TT=600N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=ARF462A/B;ARF462A/B;MOSFETs N;Power >100V;APT 200V 20A 0.3ohm TO-247 cs
*SYM=POWMOSN
.SUBCKT ARF462A/B 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 0.141
RS 40 3 8.5M
LG 20 19 6.9N
RG 1 2 1
CGS 2 3 1.15N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 4.04N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 4.5N
.MODEL DMOS NMOS (LEVEL=3 VMAX=417K THETA=45M ETA=2M VTO=4 KP=4.45)
.MODEL DCGD D (CJO=4.04N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=83N N=1.5 RS=22.5M BV=200 CJO=1.37N VJ=0.8 M=0.42 TT=346N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=ARF463A/B;ARF463A/B;MOSFETs N;Power >100V;APT 500V 9A 0.85ohm TO-247 CS
*SYM=POWMOSN
.SUBCKT ARF463A/B 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 0.403
RS 40 3 22.2M
LG 20 19 9N
RG 1 2 1
CGS 2 3 628P
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 1.07N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 5.5N
.MODEL DMOS NMOS (LEVEL=3 VMAX=1.04MEG THETA=45M ETA=2M VTO=4 KP=1.67)
.MODEL DCGD D (CJO=1.07N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=37.4N N=1.5 RS=66.7M BV=500 CJO=586P VJ=0.8 M=0.42 TT=500N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=ARF444/5;ARF444/5;MOSFETs N;Power >100V;APT 1000V 6A 1.8ohm TO-247 cs
*SYM=POWMOSN
.SUBCKT ARF444/5 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 0.854
RS 40 3 46M
RG 20 2 23.1
CGS 2 3 1.56N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 1.3N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.5N
.MODEL DMOS NMOS (LEVEL=1 LAMBDA=2M VTO=3.1 KP=7)
.MODEL DCGD D (CJO=1.3N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=27N N=1.5 RS=69.2M BV=1K CJO=610P VJ=0.8 M=0.42 TT=525N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=30D20;30D20;Diode;Si;APT 200V 30A 35us fast/soft
.MODEL 30D20 D (IS=42.6N RS=1.4M N=1.7 BV=200 IBV=250U
+ CJO=1.23N VJ=0.75 M=0.333 TT=50.4U)
**********
*SRC=10M07JVR;10M07JVR;MOSFETs N;Power <=100V;APT 100V 225A 0.007ohm ISOTOP
*SYM=POWMOSN
.SUBCKT 10M07JVR 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 2.32M
RS 40 3 1.18M
RG 20 2 0.667
CGS 2 3 15.2N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 35.9N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 6N
.MODEL DMOS NMOS (LEVEL=3 VMAX=208K THETA=58.1M ETA=66.7U VTO=3.1 KP=172)
.MODEL DCGD D (CJO=35.9N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=934N N=1.5 RS=2.44M BV=100 CJO=17.2N VJ=0.8 M=0.42 TT=330N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=10M11LVR;10M11LVR;MOSFETs N;Power <=100V;APT 100V 100A 0.011ohm TO-264
*SYM=POWMOSN
.SUBCKT 10M11LVR 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 4.22M
RS 40 3 1.28M
RG 20 2 1.5
CGS 2 3 7.42N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 15.1N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.5N
.MODEL DMOS NMOS (LEVEL=3 VMAX=208K THETA=58.1M ETA=150U VTO=3.1 KP=225)
.MODEL DCGD D (CJO=15.1N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=415N N=1.5 RS=5.5M BV=100 CJO=8.69N VJ=0.8 M=0.42 TT=250N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=12045L2VR;12045L2VR;MOSFETs N;Power >100V;APT 1200V 26A 0.45ohm TO-264MAX
*SYM=POWMOSN
.SUBCKT 12045L2VR 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 0.213
RS 40 3 12.2M
RG 20 2 5.77
CGS 2 3 10.7N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 5.9N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 6N
.MODEL DMOS NMOS (LEVEL=1 LAMBDA=577U VTO=3.1 KP=58.6)
.MODEL DCGD D (CJO=5.9N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=108N N=1.5 RS=21.2M BV=1.2K CJO=1.98N VJ=0.8 M=0.42 TT=1.25U)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=12060B2VR/LVR;12060B2VR/LVR;MOSFETs N;Power >100V;APT 1200V 20A 0.6ohm TO-264
*SYM=POWMOSN
.SUBCKT 12060B2L 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 0.284
RS 40 3 16M
RG 20 2 7.5
CGS 2 3 7.29N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 3.72N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 6N
.MODEL DMOS NMOS (LEVEL=1 LAMBDA=750U VTO=3.1 KP=76.2)
.MODEL DCGD D (CJO=3.72N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=83N N=1.5 RS=27.5M BV=1.2K CJO=1.38N VJ=0.8 M=0.42 TT=1.19U)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=12080JVR;12080JVR;MOSFETs N;Power >100V;APT 1200V 15A 0.8ohm ISOTOP
*SYM=POWMOSN
.SUBCKT 12080JVR 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 0.379
RS 40 3 21M
RG 20 2 10
CGS 2 3 6.25N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 3.21N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 6N
.MODEL DMOS NMOS (LEVEL=1 LAMBDA=1M VTO=3.1 KP=102)
.MODEL DCGD D (CJO=3.21N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=62.3N N=1.5 RS=36.7M BV=1.2K CJO=1.2N VJ=0.8 M=0.42 TT=1.08U)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=15D100K;15D100K;Diode;Si;APT 1000V 15A 60us TO-220
.MODEL 15D100K D (IS=13.3M RS=20.6M N=7.92 BV=1E+03 IBV=7U
+ CJO=77.2P VJ=0.75 M=0.333 TT=86.4U)
**********
*SRC=20M10JFLL;20M10JFLL;MOSFETs N;Power >100V;APT 200V 185A 0.01ohm ISOTOP
*SYM=POWMOSN
.SUBCKT 20M10JFLL 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 3.75M
RS 40 3 1.25M
RG 20 2 0.814
CGS 2 3 12.5N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 4.2N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 6N
.MODEL DMOS NMOS (LEVEL=3 VMAX=417K THETA=45M ETA=81.1U VTO=4 KP=192)
.MODEL DCGD D (CJO=4.2N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=768N N=1.5 RS=2.97M BV=200 CJO=17.2N VJ=0.8 M=0.42 TT=250N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=20M11JVFR;20M11JVFR;MOSFETs N;Power >100V;APT 200V 175A 0.011ohm ISOTOP
*SYM=POWMOSN
.SUBCKT 20M11JVFR 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 4.22M
RS 40 3 1.28M
RG 20 2 0.857
CGS 2 3 16.6N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 17.3N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 8N
.MODEL DMOS NMOS (LEVEL=3 VMAX=417K THETA=58.1M ETA=85.7U VTO=3.1 KP=169)
.MODEL DCGD D (CJO=17.3N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=726N N=1.5 RS=3.14M BV=200 CJO=11.8N VJ=0.8 M=0.42 TT=250N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=20M11JVR;20M11JVR;MOSFETs N;Power >100V;APT 200V 175A 0.011ohm ISOTOP
*SYM=POWMOSN
.SUBCKT 20M11JVR 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 4.22M
RS 40 3 1.28M
RG 20 2 0.857
CGS 2 3 16.6N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 17.3N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 8N
.MODEL DMOS NMOS (LEVEL=3 VMAX=417K THETA=58.1M ETA=85.7U VTO=3.1 KP=169)
.MODEL DCGD D (CJO=17.3N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=726N N=1.5 RS=3.14M BV=200 CJO=11.8N VJ=0.8 M=0.42 TT=460N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=101D120J;101D120J;Diode;Si;APT 1200V 100A 0.13us ISOTOP
.MODEL 101D120J D (IS=57.6M RS=1.95M N=8.09 BV=1.2K IBV=250U
+ CJO=746P VJ=0.75 M=0.333 TT=187N)
**********
*SRC=2X10XD60J;2X10XD60J;Diode;Si;APT 600V 100A 60us ISOTOP
.MODEL 2X10XD60J D (IS=6.48E-24 RS=2.21M N=0.504 BV=600 IBV=38U
+ CJO=1.06N VJ=0.75 M=0.333 TT=86.4U)
**********
*SRC=30D100B;30D100B;Diode;Si;APT 1000V 30A 0.06us TO-247
.MODEL 30D100B D (IS=185U RS=7.55M N=4.69 BV=1E+03 IBV=250U
+ CJO=193P VJ=0.75 M=0.333 TT=86.4N)
**********
*SRC=30D40B;30D40B;Diode;Si;APT 400V 30A 0.045us TO-247
.MODEL 30D40B D (IS=1.26N RS=6.17M N=1.4 BV=400 IBV=250U
+ CJO=530P VJ=0.75 M=0.333 TT=64.8N)
**********
*SRC=30D40S;30D40S;Diode;Si;APT 400V 30A 0.045us D3PAK
.MODEL 30D40S D (IS=1.26N RS=6.17M N=1.4 BV=400 IBV=250U
+ CJO=530P VJ=0.75 M=0.333 TT=64.8N)
**********
*SRC=30D60B;30D60B;Diode;Si;APT 600V 30A 0.05us TO-247
.MODEL 30D60B D (IS=193N RS=6.89M N=1.7 BV=600 IBV=250U
+ CJO=257P VJ=0.75 M=0.333 TT=72N)
**********
*SRC=30M85BVR;30M85BVR;MOSFETs N;Power >100V;APT 300V 40A 0.085ohm TO-247
*SYM=POWMOSN
.SUBCKT 30M85BVR 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 39.4M
RS 40 3 3.12M
RG 20 2 3.75
CGS 2 3 3.9N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 2.57N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.5N
.MODEL DMOS NMOS (LEVEL=3 VMAX=625K THETA=58.1M ETA=375U VTO=3.1 KP=33)
.MODEL DCGD D (CJO=2.57N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=166N N=1.5 RS=13.8M BV=300 CJO=2.15N VJ=0.8 M=0.42 TT=390N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=5024BVFR;5024BVFR;MOSFETs N;Power >100V;APT 500V 22A 0.24ohm TO-247
*SYM=POWMOSN
.SUBCKT 5024BVFR 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 0.113
RS 40 3 7M
RG 20 2 6.82
CGS 2 3 3.42N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 2.31N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.5N
.MODEL DMOS NMOS (LEVEL=3 VMAX=1.04MEG THETA=58.1M ETA=682U VTO=3.1 KP=33.9)
.MODEL DCGD D (CJO=2.31N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=91.3N N=1.5 RS=25M BV=500 CJO=1.25N VJ=0.8 M=0.42 TT=250N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=50M85JVFR;50M85JVFR;MOSFETs N;Power >100V;APT 500V 50A 0.085ohm ISOTOP
*SYM=POWMOSN
.SUBCKT 50M85JVFR 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 39.4M
RS 40 3 3.12M
RG 20 2 3
CGS 2 3 8.5N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 6.42N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.5N
.MODEL DMOS NMOS (LEVEL=3 VMAX=1.04MEG THETA=58.1M ETA=300U VTO=3.1 KP=76.2)
.MODEL DCGD D (CJO=6.42N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=208N N=1.5 RS=11M BV=500 CJO=3.18N VJ=0.8 M=0.42 TT=300N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=8030JVFR;8030JVFR;MOSFETs N;Power >100V;APT 800V 25A 0.3ohm ISOTOP
*SYM=POWMOSN
.SUBCKT 8030JVFR 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 0.141
RS 40 3 8.5M
RG 20 2 6
CGS 2 3 6.28N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 4.11N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 6N
.MODEL DMOS NMOS (LEVEL=1 LAMBDA=600U VTO=3.1 KP=47.1)
.MODEL DCGD D (CJO=4.11N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=104N N=1.5 RS=22M BV=800 CJO=1.4N VJ=0.8 M=0.42 TT=300N)
.MODEL DLIM D (IS=100U)
.ENDS
**********