apt.lib

[电子线路模拟仿真软件].TINA.Pro.V.6.Educational-141M.zip

VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 3.66N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.5N
.MODEL DMOS NMOS (LEVEL=1 LAMBDA=2.17M VTO=3.4 KP=7.78)
.MODEL DCGD D (CJO=3.66N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=74.7N N=1.5 RS=47.2M BV=1K CJO=2.13N VJ=0.8 M=0.42 TT=700N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=30M19JVFR;30M19JVFR;MOSFETs N;Power >100V;APT 300V 130A 0.019ohm FREDFET
*SYM=POWMOSN
.SUBCKT 30M19JVFR 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 8.02M
RS 40 3 1.47M
RG 20 2 1.15
CGS 2 3 17N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 12.6N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.5N
.MODEL DMOS NMOS (LEVEL=3 VMAX=625K THETA=51.4M ETA=177U VTO=3.5 KP=198)
.MODEL DCGD D (CJO=12.6N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=540N N=1.5 RS=4.23M BV=300 CJO=9.76N VJ=0.8 M=0.42 TT=200N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=8030JVR;8030JVR;MOSFETs N;Power >100V;APT 800V 25A 0.3ohm Isotop
*SYM=POWMOSN
.SUBCKT 8030JVR 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 0.141
RS 40 3 8.5M
RG 20 2 6
CGS 2 3 6.28N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 4.11N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.5N
.MODEL DMOS NMOS (LEVEL=1 LAMBDA=1.24M VTO=3.5 KP=140)
.MODEL DCGD D (CJO=4.11N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=104N N=1.5 RS=22M BV=800 CJO=1.4N VJ=0.8 M=0.42 TT=850N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=40M70JVR;40M70JVR;MOSFETs N;Power >100V;APT 400V 53A 0.07ohm Isotop
*SYM=POWMOSN
.SUBCKT 40M70JVR 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 32.2M
RS 40 3 2.75M
RG 20 2 2.83
CGS 2 3 6.96N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 5.78N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.5N
.MODEL DMOS NMOS (LEVEL=3 VMAX=833K THETA=51.4M ETA=415U VTO=3.5 KP=66.1)
.MODEL DCGD D (CJO=5.78N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=220N N=1.5 RS=10.4M BV=400 CJO=2.97N VJ=0.8 M=0.42 TT=540N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=10025JVR;10025JVR;MOSFETs N;Power >100V;APT 1000V 34A 0.25ohm Isotop
*SYM=POWMOSN
.SUBCKT 10025JVR 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 0.118
RS 40 3 7.25M
RG 20 2 4.41
CGS 2 3 14.3N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 9.11N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.5N
.MODEL DMOS NMOS (LEVEL=1 LAMBDA=941U VTO=3.1 KP=103)
.MODEL DCGD D (CJO=9.11N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=141N N=1.5 RS=16.2M BV=1K CJO=2.92N VJ=0.8 M=0.42 TT=1.3U)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=6060DNR;6060DNR;MOSFETs N;Power >100V;apt 600V 13A 0.6ohm die
*SYM=POWMOSN
.SUBCKT 6060DNR 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 0.284
RS 40 3 16M
RG 20 2 11.5
CGS 2 3 1.78N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 1.45N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 1F
.MODEL DMOS NMOS (LEVEL=1 LAMBDA=1.15M VTO=3.1 KP=3.06)
.MODEL DCGD D (CJO=1.45N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=54N N=1.5 RS=42.3M BV=600 CJO=744P VJ=0.8 M=0.42 TT=480N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=15DS60B;15DS60B;Diode;Si;APT 600V 15A 20us hf fred
.MODEL 15DS60B D (IS=6.8E-20 RS=25.6M N=1.7 BV=600 IBV=150U
+ CJO=618P VJ=0.75 M=0.333 TT=28.8U)
**********
*SRC=1001RBVR;1001RBVR;MOSFETs N;Power >100V;APT 1000V 11A 1ohm TO-247
*SYM=POWMOSN
.SUBCKT 1001RBVR 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 0.474
RS 40 3 26M
RG 20 2 13.6
CGS 2 3 2.92N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 1.73N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.5N
.MODEL DMOS NMOS (LEVEL=1 LAMBDA=2M VTO=3.1 KP=28.6)
.MODEL DCGD D (CJO=1.73N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=45.7N N=1.5 RS=50M BV=1K CJO=624P VJ=0.8 M=0.42 TT=700N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=1001RBLC;1001RBLC;MOSFETs N;Power >100V;apt 1000V 11A 1ohm TO-247
*SYM=POWMOSN
.SUBCKT 1001RBLC 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 0.474
RS 40 3 26M
RG 20 2 13.6
CGS 2 3 2.22N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 1.16N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.5N
.MODEL DMOS NMOS (LEVEL=1 LAMBDA=2M VTO=3.6 KP=36.8)
.MODEL DCGD D (CJO=1.16N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=45.7N N=1.5 RS=50M BV=1K CJO=817P VJ=0.8 M=0.42 TT=700N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=50M80-LC;50M80-LC;MOSFETs N;Power >100V;APT 500V 58A 0.08ohm TO-264
*SYM=POWMOSN
.SUBCKT 50M80LLC 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 37M
RS 40 3 3M
RG 20 2 2.59
CGS 2 3 5.83N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 2.95N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.5N
.MODEL DMOS NMOS (LEVEL=3 VMAX=1.04MEG THETA=46.2M ETA=2M VTO=3.9 KP=104)
.MODEL DCGD D (CJO=2.95N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=241N N=1.5 RS=9.48M BV=500 CJO=4.26N VJ=0.8 M=0.42 TT=680N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=5024BVR;5024BVR;MOSFETs N;Power >100V;APT 500V 22A 0.24ohm TO-247
*SYM=POWMOSN
.SUBCKT 5024BVR 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 0.113
RS 40 3 7M
RG 20 2 6.82
CGS 2 3 3.42N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 2.31N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.5N
.MODEL DMOS NMOS (LEVEL=3 VMAX=1.04MEG THETA=58.1M ETA=2M VTO=3.1 KP=45.2)
.MODEL DCGD D (CJO=2.31N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=91.3N N=1.5 RS=25M BV=500 CJO=1.25N VJ=0.8 M=0.42 TT=415N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=ARF460A/B;ARF460A/B;MOSFETs N;Power >100V;APT 500V 14A 0.45ohm TO-247 CS
*SYM=POWMOSN
.SUBCKT ARF460A/B 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
LD 10 9 7N
RD 9 1 0.213
RS 40 3 12.2M
LG 20 19 6.9N
RG 19 2 1
CGS 2 3 1.23N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 1.98N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 2.5N
.MODEL DMOS NMOS (LEVEL=3 VMAX=1.04MEG THETA=40M ETA=2M VTO=4.5 KP=3.56)
.MODEL DCGD D (CJO=1.98N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=58.1N N=1.5 RS=42.9M BV=500 CJO=760P VJ=0.8 M=0.42 TT=400N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=ARF1500;ARF1500;MOSFETs N;Power >100V;APT 500V 60A 0.11ohm 1067sq
*SYM=POWMOSN
.SUBCKT ARF1500 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 51.2M
RS 40 3 3.75M
LG 20 19 6.9N
RG 19 2 2.5
CGS 2 3 4.91N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 7.96N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 2.5N
.MODEL DMOS NMOS (LEVEL=3 VMAX=1.04MEG THETA=40M ETA=1.42M VTO=4.5 KP=8.91)
.MODEL DCGD D (CJO=7.96N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=249N N=1.5 RS=9.17M BV=500 CJO=3.03N VJ=0.8 M=0.42 TT=500N)
.MODEL DLIM D (IS=100U)
.ENDS
***********
SRC=10M25BVR;10M25BVR;MOSFETs N;Power <=100V;APT 100V 75A 0.025ohm TO-247
*SYM=POWMOSN
.SUBCKT 10M25BVR 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 10.9M
RS 40 3 1.63M
RG 20 2 2
CGS 2 3 3.65N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 8.34N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.5N
.MODEL DMOS NMOS (LEVEL=3 VMAX=208K THETA=58.1M ETA=2M VTO=3.1 KP=30.4)
.MODEL DCGD D (CJO=8.34N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=311N N=1.5 RS=7.33M BV=100 CJO=4.09N VJ=0.8 M=0.42 TT=155N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=20M38BVR;20M38BVR;MOSFETs N;Power >100V;APT 200V 67A 0.038ohm TO-247
*SYM=POWMOSN
.SUBCKT 20M38BVR 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 17.1M
RS 40 3 1.95M
RG 20 2 2.24
CGS 2 3 4.71N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 5.01N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.5N
.MODEL DMOS NMOS (LEVEL=3 VMAX=417K THETA=58.1M ETA=970U VTO=3.1 KP=31.8)
.MODEL DCGD D (CJO=5.01N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=278N N=1.5 RS=8.21M BV=200 CJO=3.25N VJ=0.8 M=0.42 TT=160N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=4012BVR;4012BVR;MOSFETs N;Power >100V;APT 400V 37A 0.12ohm TO-247
*SYM=POWMOSN
.SUBCKT 4012BVR 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 56M
RS 40 3 4M
RG 20 2 4.05
CGS 2 3 4.21N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 3.72N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.5N
.MODEL DMOS NMOS (LEVEL=3 VMAX=833K THETA=58.1M ETA=1.76M VTO=3.1 KP=32.9)
.MODEL DCGD D (CJO=3.72N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=154N N=1.5 RS=14.9M BV=400 CJO=1.72N VJ=0.8 M=0.42 TT=450N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=5017BVR;5017BVR;MOSFETs N;Power >100V;APT 500V 30A 0.17ohm TO-247
*SYM=POWMOSN
.SUBCKT 5017BVR 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 79.8M
RS 40 3 5.25M
RG 20 2 5
CGS 2 3 4.17N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 2.95N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.5N
.MODEL DMOS NMOS (LEVEL=3 VMAX=1.04MEG THETA=58.1M ETA=2.17M VTO=3.1 KP=35.9)
.MODEL DCGD D (CJO=2.95N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=125N N=1.5 RS=18.3M BV=500 CJO=1.59N VJ=0.8 M=0.42 TT=510N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=6015LVR;6015LVR;MOSFETs N;Power >100V;APT 600V 38A 0.15ohm TO-264
*SYM=POWMOSN
.SUBCKT 6015LVR 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 70.2M
RS 40 3 4.75M
RG 20 2 3.95
CGS 2 3 7.18N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 4.11N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.5N
.MODEL DMOS NMOS (LEVEL=1 LAMBDA=1.71M VTO=3.1 KP=40.1)
.MODEL DCGD D (CJO=4.11N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=158N N=1.5 RS=14.5M BV=600 CJO=2.49N VJ=0.8 M=0.42 TT=690N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=50M50JVR;50M50JVR;MOSFETs N;Power >100V;APT 500V 77A 0.05ohm SOT-227
*SYM=POWMOSN
.SUBCKT 50M50JVR 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 22.8M
RS 40 3 2.25M
RG 20 2 1.95
CGS 2 3 15.4N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 10.9N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.5N
.MODEL DMOS NMOS (LEVEL=3 VMAX=1.04MEG THETA=58.1M ETA=1.1M VTO=3.1 KP=182)
.MODEL DCGD D (CJO=10.9N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=320N N=1.5 RS=7.14M BV=500 CJO=5.85N VJ=0.8 M=0.42 TT=880N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=10M19BVR;10M19BVR;MOSFETs N;Power <=100V;APT 100V 75A 0.019ohm TO-247
*SYM=POWMOSN
.SUBCKT 10M19BVR 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 8.02M
RS 40 3 1.47M
RG 20 2 2
CGS 2 3 4.3N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 10.3N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.5N
.MODEL DMOS NMOS (LEVEL=3 VMAX=208K THETA=58.1M ETA=1.13M VTO=3.1 KP=45.7)
.MODEL DCGD D (CJO=10.3N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=311N N=1.5 RS=7.33M BV=100 CJO=4.73N VJ=0.8 M=0.42 TT=200N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=50M50JLC;50M50JLC;MOSFETs N;Power >100V;APT 500V 77A 0.05ohm SOT-227
*SYM=POWMOSN
.SUBCKT 50M50JLC 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 22.8M
RS 40 3 2.25M
RG 20 2 1.95
CGS 2 3 11N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 5.65N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.5N
.MODEL DMOS NMOS (LEVEL=3 VMAX=1.04MEG THETA=43.9M ETA=714U VTO=4.1 KP=216)
.MODEL DCGD D (CJO=5.65N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=320N N=1.5 RS=7.14M BV=500 CJO=8.09N VJ=0.8 M=0.42 TT=880N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=5020BN;5020BN;MOSFETs N;Power >100V;APT 500V 28A 0.2ohm TO-247
*SYM=POWMOSN
.SUBCKT 5020BN 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 94M
RS 40 3 6M
RG 20 2 13.1
CGS 2 3 2.66N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 2.95N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.5N
.MODEL DMOS NMOS (LEVEL=3 VMAX=1.04MEG THETA=58.1M ETA=2M VTO=3.1 KP=10.4)
.MODEL DCGD D (CJO=2.95N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=116N N=1.5 RS=16.1M BV=500 CJO=1.55N VJ=0.8 M=0.42 TT=430N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=ARF461;ARF461;MOSFETs N;Power >100V;APT 1000V 6A 1.8ohm CE TO-247
*SYM=POWMOSN
.SUBCKT ARF461 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 0.854
RS 40 3 46M
RG 20 2 23.1
CGS 2 3 1.47N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 946P
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 2.5N
.MODEL DMOS NMOS (LEVEL=1 LAMBDA=2M VTO=4.4 KP=5.38)
.MODEL DCGD D (CJO=946P VJ=0.6 M=0.68)
.MODEL DSUB D (IS=27N N=1.5 RS=0.131 BV=1K CJO=377P VJ=0.8 M=0.42 TT=600N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=10050JLC;10050JLC;MOSFETs N;Power >100V;APT 1000V 25A 0.5ohm SOT-227
*SYM=POWMOSN
.SUBCKT 10050JLC 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 0.236
RS 40 3 13.5M
RG 20 2 6
CGS 2 3 4.83N
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 2.18N
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.5N
.MODEL DMOS NMOS (LEVEL=1 LAMBDA=480U VTO=3.3 KP=129)
.MODEL DCGD D (CJO=2.18N VJ=0.6 M=0.68)
.MODEL DSUB D (IS=104N N=1.5 RS=22M BV=1K CJO=409P VJ=0.8 M=0.42 TT=1.1U)
.MODEL DLIM D (IS=100U)
.ENDS
**********
*SRC=60D120B;60D120B;Diode;Si;APT 1200V 60A 0.07us UFAST
.MODEL 60D120B D (IS=58.1M RS=2.14M N=12.4 BV=1.2K IBV=30U
+ CJO=729P VJ=0.75 M=0.333 TT=101N)
**********
*SRC=1004RGN;1004RGN;MOSFETs N;Power >100V;APT 1000V 3A 4ohm TO-257
*SYM=POWMOSN
.SUBCKT 1004RGN 10 20 30