motmos.lib

[电子线路模拟仿真软件].TINA.Pro.V.6.Educational-141M.zip

E2 8 6 4 1 2
.MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1)
CGDMAX 7 4 600P
RCGD 7 4 1E7
DGD 6 4 DGD
RDGD 4 6 1E7
.MODEL DGD D(M=0.84 CJO=600P VJ=0.519)
M3 7 9 1 1 INTER
E3 9 1 4 1 -2
.ENDS
*
*             END OF SUBCIRCUIT
* -------------------------------------------------------
*MTD3055EL model created using LAAS version.
*
*           TMOS MODEL WITH SWITCHES (SUBCIRCUIT)
*
.SUBCKT MTD3055EL 20 10 30
RG 10 1 1
M1 2 1 3 3 DMOS L=1U W=1U
.MODEL DMOS NMOS (VTO=1.72 KP=8.12 THETA=0.058 VMAX=3E5 LEVEL=3)
CGS 1 3 550P
RD 20 4  0.12
DDS 3 4 DDS
.MODEL DDS D(BV=60 M=0.41 CJO=595P VJ=0.63)
DBODY 3 20 DBODY
.MODEL DBODY D(IS=1.5E-10 N=1.34 RS=0.057 TT=45N)
RA 4 2 1E-3
RS 3 5 1M
LS 5 30 5N
M2 1 8 6 6 INTER
E2 8 6 4 1 2
.MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1)
CGDMAX 7 4 700P
RCGD 7 4 1E7
DGD 6 4 DGD
RDGD 4 6 1E7
.MODEL DGD D(M=0.58 CJO=700P VJ=0.107)
M3 7 9 1 1 INTER
E3 9 1 4 1 -2
.ENDS
*
*             END OF SUBCIRCUIT
* ---------------------------------------------------------
*MTD4N20 model created using LAAS version.
*
*           TMOS MODEL WITH SWITCHES (SUBCIRCUIT)
*
.SUBCKT MTD4N20 20 10 30
RG 10 1 1
M1 2 1 3 3 DMOS L=1U W=1U
.MODEL DMOS NMOS (VTO=3.65 KP=2.26 THETA=0.04 VMAX=1.4E5 LEVEL=3)
CGS 1 3 380P
RD 20 4 0.589
DDS 3 4 DDS
.MODEL DDS D(BV=200 M=0.48 CJO=375P VJ=0.776)
DBODY 3 20 DBODY
.MODEL DBODY D(IS=8E-13 N=1.03 RS=0.2 TT=340N)
RA 4 2 1E-3
RS 3 5 1M
LS 5 30 5N
M2 1 8 6 6 INTER
E2 8 6 4 1 2
.MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1)
CGDMAX 7 4 550P
RCGD 7 4 1E7
DGD 6 4 DGD
RDGD 4 6 1E7
.MODEL DGD D(M=0.7 CJO=550P VJ=0.179)
M3 7 9 1 1 INTER
E3 9 1 4 1 -2
.ENDS
*
*             END OF SUBCIRCUIT
* -------------------------------------------------------
*MTD5N06 model created using LAAS version.
*
*           TMOS MODEL WITH SWITCHES (SUBCIRCUIT)
*
.SUBCKT MTD5N06 20 10 30
RG 10 1 1
M1 2 1 3 3 DMOS L=1U W=1U
.MODEL DMOS NMOS (VTO=3.64 KP=1.56 THETA=0.04 VMAX=2E5 LEVEL=3)
CGS 1 3 200P
RD 20 4 0.16
DDS 3 4 DDS
.MODEL DDS D(BV=50 M=0.37 CJO=300P VJ=0.53)
DBODY 3 20 DBODY
.MODEL DBODY D(IS=4E-12 N=1.08 RS=0.175 TT=50N)
RA 4 2 1E-3
RS 3 5 1M
LS 5 30 5N
M2 1 8 6 6 INTER
E2 8 6 4 1 2
.MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1)
CGDMAX 7 4 300P
RCGD 7 4 1E7
DGD 6 4 DGD
RDGD 4 6 1E7
.MODEL DGD D(M=0.52 CJO=300P VJ=0.339)
M3 7 9 1 1 INTER
E3 9 1 4 1 -2
.ENDS
*
*             END OF SUBCIRCUIT
* -------------------------------------------------------
*MTD10N05E model created using LAAS version.
*
*           TMOS MODEL WITH SWITCHES (SUBCIRCUIT)
*
.SUBCKT MTD10N05E 20 10 30
RG 10 1 1
M1 2 1 3 3 DMOS L=1U W=1U
.MODEL DMOS NMOS (VTO=3.54 KP=8.79 THETA=0.04 VMAX=1.1E5 LEVEL=3)
CGS 1 3 500P
RD 20 4 0.075
DDS 3 4 DDS
.MODEL DDS D(BV=50 M=0.4 CJO=875P VJ=0.674)
DBODY 3 20 DBODY
.MODEL DBODY D(IS=6.8E-10 N=1.2 RS=0.068 TT=120N)
RA 4 2 1E-3
RS 3 5 1M
LS 5 30 5N
M2 1 8 6 6 INTER
E2 8 6 4 1 2
.MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1)
CGDMAX 7 4 600P
RCGD 7 4 1E7
DGD 6 4 DGD
RDGD 4 6 1E7
.MODEL DGD D(M=0.6 CJO=600P VJ=0.614)
M3 7 9 1 1 INTER
E3 9 1 4 1 -2
.ENDS
*
*             END OF SUBCIRCUIT
* ----------------------------------------------------
*MTD2N50 model created using LAAS version.
*
*           TMOS MODEL WITH SWITCHES (SUBCIRCUIT)
*
.SUBCKT MTD2N50 20 10 30
RG 10 1 1
M1 2 1 3 3 DMOS L=1U W=1U
.MODEL DMOS NMOS (VTO=3.38 KP=1.51 THETA=0.04 VMAX=1.3E5 LEVEL=3)
CGS 1 3 450P
RD 20 4 1.85
DDS 3 4 DDS
.MODEL DDS D(BV=500 M=0.5 CJO=220P VJ=0.59)
DBODY 3 20 DBODY
.MODEL DBODY D(IS=5E-12 N=1.08 RS=0.13 TT=880N)
RA 4 2 1E-3
RS 3 5 1M
LS 5 30 5N
M2 1 8 6 6 INTER
E2 8 6 4 1 2
.MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1)
CGDMAX 7 4 850P
RCGD 7 4 1E7
DGD 6 4 DGD
RDGD 4 6 1E7
.MODEL DGD D(M=0.48 CJO=850P VJ=0.0103)
M3 7 9 1 1 INTER
E3 9 1 4 1 -2
.ENDS
*
*             END OF SUBCIRCUIT
* -------------------------------------------------------
*MTP30N08M model created using LAAS version.
*
*           TMOS MODEL WITH SWITCHES (SUBCIRCUIT)
*
.SUBCKT MTP30N08M 20 10 30
RG 10 1 1
M1 2 1 3 3 DMOS L=1U W=1U
.MODEL DMOS NMOS (VTO=3.57 KP=20.7 THETA=0.04 VMAX=1E5 LEVEL=3)
CGS 1 3 1300P
RD 20 4 0.035
DDS 3 4 DDS
.MODEL DDS D(BV=80 M=0.43 CJO=1770P VJ=0.657)
DBODY 3 20 DBODY
.MODEL DBODY D(IS=2E-12 N=1.01 RS=0.033 TT=780N)
RA 4 2 1E-3
RS 3 5 1M
LS 5 30 6N
M2 1 8 6 6 INTER
E2 8 6 4 1 2
.MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1)
CGDMAX 7 4 2300P
RCGD 7 4 1E7
DGD 6 4 DGD
RDGD 4 6 1E7
.MODEL DGD D(M=0.63 CJO=2300P VJ=0.368)
M3 7 9 1 1 INTER
E3 9 1 4 1 -2
.ENDS
*
*             END OF SUBCIRCUIT
* -------------------------------------------------------
*MTP40N06M model created using LAAS version.
*
*           TMOS MODEL WITH SWITCHES (SUBCIRCUIT)
*
.SUBCKT MTP40N06M 20 10 30
RG 10 1 1
M1 2 1 3 3 DMOS L=1U W=1U
.MODEL DMOS NMOS (VTO=3.15 KP=25 THETA=0.04 VMAX=1E5 LEVEL=3)
CGS 1 3 1600P
RD 20 4 0.023
DDS 3 4 DDS
.MODEL DDS D(BV=60 M=0.42 CJO=1890P VJ=0.717)
DBODY 3 20 DBODY
.MODEL DBODY D(IS=2.3E-12 N=1.01 RS=0.02 TT=190N)
RA 4 2 1E-3
RS 3 5 1M
LS 5 30 6N
M2 1 8 6 6 INTER
E2 8 6 4 1 2
.MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1)
CGDMAX 7 4 2500P
RCGD 7 4 1E7
DGD 6 4 DGD
RDGD 4 6 1E7
.MODEL DGD D(M=0.58 CJO=2500P VJ=0.273)
M3 7 9 1 1 INTER
E3 9 1 4 1 -2
.ENDS
*
*             END OF SUBCIRCUIT
* --------------------------------------------------------
*MTM10N100E model created using LAAS version.
*
*           TMOS MODEL WITH SWITCHES (SUBCIRCUIT)
*
.SUBCKT MTM10N100E 20 10 30
RG 10 1 1
M1 2 1 3 3 DMOS L=1U W=1U
.MODEL DMOS NMOS (VTO=3.5 KP=15 THETA=0.04 VMAX=1.5E5 LEVEL=3)
CGS 1 3 3700P
RD 20 4 1.12
DDS 3 4 DDS
.MODEL DDS D(BV=1000 M=0.56 CJO=2358P VJ=0.4055)
DBODY 3 20 DBODY
.MODEL DBODY D(IS=1.88E-11 N=1.02 RS=0.017 TT=3040N)
RA 4 2 1E-3
RS 3 5 1M
LS 5 30 12N
M2 1 8 6 6 INTER
E2 8 6 4 1 2
.MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1)
CGDMAX 7 4 4500P
RCGD 7 4 1E7
DGD 6 4 DGD
RDGD 4 6 1E7
.MODEL DGD D(M=0.48 CJO=4500P VJ=0.004)
M3 7 9 1 1 INTER
E3 9 1 4 1 -2
.ENDS
*
*             END OF SUBCIRCUIT
* -------------------------------------------------------
*MTM24N50E model created using LAAS version.
*
*           TMOS MODEL WITH SWITCHES (SUBCIRCUIT)
*
.SUBCKT MTM24N50E 20 10 30
RG 10 1 1
M1 2 1 3 3 DMOS L=1U W=1U
.MODEL DMOS NMOS (VTO=3.65 KP=20.9 THETA=0.04 VMAX=0.8E5 LEVEL=3)
CGS 1 3 4000P
RD 20 4 0.2
DDS 3 4 DDS
.MODEL DDS D(BV=500 M=0.56 CJO=3638P VJ=0.395)
DBODY 3 20 DBODY
.MODEL DBODY D(IS=1E-11 N=1.05 RS=0.01 TT=1250N)
RA 4 2 1E-3
RS 3 5 1M
LS 5 30 12N
M2 1 8 6 6 INTER
E2 8 6 4 1 2
.MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1)
CGDMAX 7 4 4500P
RCGD 7 4 1E7
DGD 6 4 DGD
RDGD 4 6 1E7
.MODEL DGD D(M=0.69 CJO=4500P VJ=0.14)
M3 7 9 1 1 INTER
E3 9 1 4 1 -2
.ENDS
*
*             END OF SUBCIRCUIT
* ------------------------------------------------------
*MTP50N06E model created using LAAS version.
*
*           TMOS MODEL WITH SWITCHES (SUBCIRCUIT)
*
.SUBCKT MTP50N06E 20 10 30
RG 10 1 1
M1 2 1 3 3 DMOS L=1U W=1U
.MODEL DMOS NMOS (VTO=3.79 KP=33.5 THETA=0.04 VMAX=0.8E5 LEVEL=3)
CGS 1 3 1750P
RD 20 4 0.02
DDS 3 4 DDS
.MODEL DDS D(BV=60 M=0.42 CJO=3272P VJ=0.716)
DBODY 3 20 DBODY
.MODEL DBODY D(IS=2.4E-12 N=1.02 RS=0.009 TT=150N)
RA 4 2 1E-3
RS 3 5 1M
LS 5 30 5N
M2 1 8 6 6 INTER
E2 8 6 4 1 2
.MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1)
CGDMAX 7 4 2600P
RCGD 7 4 1E7
DGD 6 4 DGD
RDGD 4 6 1E7
.MODEL DGD D(M=0.57 CJO=2600P VJ=0.23)
M3 7 9 1 1 INTER
E3 9 1 4 1 -2
.ENDS
*
*             END OF SUBCIRCUIT
* -----------------------------------------------------
*MTD4P06 model created using LAAS version.
*
*           TMOS MODEL WITH SWITCHES (SUBCIRCUIT)
*
.SUBCKT MTD4P06 20 10 30
RG 10 1 1
M1 2 1 3 3 DMOS L=1U W=1U
.MODEL DMOS PMOS (VTO=-4 KP=1.52 THETA=0.04 VMAX=3.5E5 LEVEL=3)
CGS 1 3 650P
RD 20 4 0.32
DDS 4 3 DDS
.MODEL DDS D(BV=60 M=0.4 CJO=685.5P VJ=0.657)
DBODY 20 3 DBODY
.MODEL DBODY D(IS=6.4E-13 N=1.03 RS=0.167 TT=190N)
RA 4 2 1E-3
RS 3 5 1M
LS 5 30 6N
M2 1 8 6 6 INTER
E2 8 6 4 1 2
.MODEL INTER PMOS (VTO=0 KP=10 LEVEL=1)
CGDMAX 7 4 750P
RCGD 7 4 1E7
DGD 4 6 DGD
RDGD 4 6 1E7
.MODEL DGD D(M=0.44 CJO=750P VJ=0.11)
M3 7 9 1 1 INTER
E3 9 1 4 1 -2
.ENDS
*
*             END OF SUBCIRCUIT
* -------------------------------------------------------
*MTD2955 model created using LAAS version.
*
*           TMOS MODEL WITH SWITCHES (SUBCIRCUIT)
*
.SUBCKT MTD2955 20 10 30
RG 10 1 1
M1 2 1 3 3 DMOS L=1U W=1U
.MODEL DMOS PMOS (VTO=-2.95 KP=2.45 THETA=0.04 VMAX=4E5 LEVEL=3)
CGS 1 3 600P
RD 20 4 0.175
DDS 4 3 DDS
.MODEL DDS D(BV=60 M=0.43 CJO=740P VJ=0.826)
DBODY 20 3 DBODY
.MODEL DBODY D(IS=5.6E-13 N=1.04 RS=0.16 TT=400N)
RA 4 2 1E-3
RS 3 5 1M
LS 5 30 5N
M2 1 8 6 6 INTER
E2 8 6 4 1 2
.MODEL INTER PMOS (VTO=0 KP=10 LEVEL=1)
CGDMAX 7 4 2300P
RCGD 7 4 1E7
DGD 4 6 DGD
RDGD 4 6 1E7
.MODEL DGD D(M=0.43 CJO=2300P VJ=0.028)
M3 7 9 1 1 INTER
E3 9 1 4 1 -2
.ENDS
*
*             END OF SUBCIRCUIT
* -----------------------------------------------------
*MTP20P06 model created using LAAS version.
*
*           TMOS MODEL WITH SWITCHES (SUBCIRCUIT)
*
.SUBCKT MTP20P06 20 10 30
RG 10 1 1
M1 2 1 3 3 DMOS L=1U W=1U
.MODEL DMOS PMOS (VTO=-3.97 KP=3.23 THETA=0.04 VMAX=3E5 LEVEL=3)
CGS 1 3 1400P
RD 20 4 0.09
DDS 4 3 DDS
.MODEL DDS D(BV=60 M=0.43 CJO=1614P VJ=0.792)
DBODY 20 3 DBODY
.MODEL DBODY D(IS=1.3E-12 N=1.02 RS=0.068 TT=520N)
RA 4 2 1E-3
RS 3 5 1M
LS 5 30 5N
M2 1 8 6 6 INTER
E2 8 6 4 1 2
.MODEL INTER PMOS (VTO=0 KP=10 LEVEL=1)
CGDMAX 7 4 2450P
RCGD 7 4 1E7
DGD 4 6 DGD
RDGD 4 6 1E7
.MODEL DGD D(M=0.44 CJO=2450P VJ=0.105)
M3 7 9 1 1 INTER
E3 9 1 4 1 -2
.ENDS
*
*             END OF SUBCIRCUIT
* ---------------------------------------------------
*MTP8P10 model created using LAAS version.
*
*           TMOS MODEL WITH SWITCHES (SUBCIRCUIT)
*
.SUBCKT MTP8P10 20 10 30
RG 10 1 1
M1 2 1 3 3 DMOS L=1U W=1U
.MODEL DMOS PMOS (VTO=-3.87 KP=2.04 THETA=0.04 VMAX=3.5E5 LEVEL=3)
CGS 1 3 750P
RD 20 4 0.19
DDS 4 3 DDS
.MODEL DDS D(BV=100 M=0.4 CJO=974P VJ=0.583)
DBODY 20 3 DBODY
.MODEL DBODY D(IS=6E-13 N=1.02 RS=0.31 TT=640N)
RA 4 2 1E-3
RS 3 5 1M
LS 5 30 6N
M2 1 8 6 6 INTER
E2 8 6 4 1 2
.MODEL INTER PMOS (VTO=0 KP=10 LEVEL=1)
CGDMAX 7 4 1700P
RCGD 7 4 1E7
DGD 4 6 DGD
RDGD 4 6 1E7
.MODEL DGD D(M=0.47 CJO=1700P VJ=0.074)
M3 7 9 1 1 INTER
E3 9 1 4 1 -2
.ENDS
*
*             END OF SUBCIRCUIT
* ---------------------------------------------------------