motmos.lib

[电子线路模拟仿真软件].TINA.Pro.V.6.Educational-141M.zip

DBODY 3 20 DBODY
.MODEL DBODY D(IS=9E-11 N=1.02 RS=0.06 TT=1.5U)
RA 4 2 1E-3
RS 3 5 1M
LS 5 30 11N
M2 1 8 6 6 INTER
E2 8 6 4 1 2
.MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1)
CGDMAX 7 4 5800P
RCGD 7 4 1E7
DGD 6 4 DGD
RDGD 4 6 1E7
.MODEL DGD D(M=0.52 CJO=5800P VJ=0.0234)
M3 7 9 1 1 INTER
E3 9 1 4 1 -2
.ENDS
*
*             END OF SUBCIRCUIT
*------------------------------------------------------------
*
*MTH8N60 model created using LAAS version.
*
*           TMOS MODEL WITH SWITCHES (SUBCIRCUIT)
*
.SUBCKT MTH8N60 20 10 30
RG 10 1 5
M1 2 1 3 3 DMOS L=1U W=1U
.MODEL DMOS NMOS (VTO=3.47 KP=7.43 THETA=0.058 VMAX=1.7E5 LEVEL=3)
CGS 1 3 1700P
RD 20 4 0.455
DDS 3 4 DDS
.MODEL DDS D(BV=600 M=0.478 CJO=855P VJ=0.69)
DBODY 3 20 DBODY
.MODEL DBODY D(IS=1.5E-11 N=1.03 RS=0.066 TT=1.6U)
RA 4 2 1E-3
RS 3 5 1M
LS 5 30 8N
M2 1 8 6 6 INTER
E2 8 6 4 1 2
.MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1)
CGDMAX 7 4 7700P
RCGD 7 4 1E7
DGD 6 4 DGD
RDGD 4 6 1E7
.MODEL DGD D(M=0.54 CJO=7700P VJ=0.014)
M3 7 9 1 1 INTER
E3 9 1 4 1 -2
.ENDS
*
*            END OF SUBCIRCUIT
*------------------------------------------------------------
*
*MTP4N85 model created using LAAS version.
*
*           TMOS MODEL WITH SWITCHES (SUBCIRCUIT)
*
.SUBCKT MTP4N85 20 10 30
RG 10 1 7
M1 2 1 3 3 DMOS L=1U W=1U
.MODEL DMOS NMOS (VTO=3.36 KP=3.66 LEVEL=1)
CGS 1 3 1200P
RD 20 4 2.80
DDS 3 4 DDS
.MODEL DDS D(BV=850 M=0.507 CJO=615P VJ=0.428)
DBODY 3 20 DBODY
.MODEL DBODY D(IS=2.5E-11 N=1.02 RS=0.041 TT=2.2U)
RA 4 2 1E-3
RS 3 5 1M
LS 5 30 5N
M2 1 8 6 6 INTER
E2 8 6 4 1 2
.MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1)
CGDMAX 7 4 3420P
RCGD 7 4 1E7
DGD 6 4 DGD
RDGD 4 6 1E7
.MODEL DGD D(M=0.45 CJO=3420P VJ=0.001)
M3 7 9 1 1 INTER
E3 9 1 4 1 -2
.ENDS
*
*             END OF SUBCIRCUIT
*-------------------------------------------------------------
*
*MTP3N100 model created using LAAS version.
*
*           TMOS MODEL WITH SWITCHES (SUBCIRCUIT)
*
.SUBCKT MTP3N100 20 10 30
RG 10 1 8
M1 2 1 3 3 DMOS L=1U W=1U
.MODEL DMOS NMOS (VTO=2.74 KP=4.7  LEVEL=1)
CGS 1 3 900P
RD 20 4 3.5
DDS 3 4 DDS
.MODEL DDS D(BV=1000 M=0.507 CJO=625P VJ=0.35)
DBODY 3 20 DBODY
.MODEL DBODY D(IS=5E-11 N=1.02 RS=0.072 TT=1.35U)
RA 4 2 1E-3
RS 3 5 1M
LS 5 30 5N
M2 1 8 6 6 INTER
E2 8 6 4 1 2
.MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1)
CGDMAX 7 4 3230P
RCGD 7 4 1E7
DGD 6 4 DGD
RDGD 4 6 1E7
.MODEL DGD D(M=0.45 CJO=3230P VJ=0.0014)
M3 7 9 1 1 INTER
E3 9 1 4 1 -2
.ENDS
*
*             END OF SUBCIRCUIT
*-------------------------------------------------------------
*
*MTH5N100 model created using LAAS version.
*
*           TMOS MODEL WITH SWITCHES (SUBCIRCUIT)
*
.SUBCKT MTH5N100 20 10 30
RG 10 1 5
M1 2 1 3 3 DMOS L=1U W=1U
.MODEL DMOS NMOS (VTO=3.36 KP=3.73 LEVEL=1)
CGS 1 3 1642P
RD 20 4 1.50
DDS 3 4 DDS
.MODEL DDS D(BV=1000 M=0.48 CJO=873P VJ=0.43)
DBODY 3 20 DBODY
.MODEL DBODY D(IS=3.6E-11 N=1.03 RS=0.057 TT=1U)
RA 4 2 1E-3
RS 3 5 1M
LS 5 30 8N
M2 1 8 6 6 INTER
E2 8 6 4 1 2
.MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1)
CGDMAX 7 4 7500P
RCGD 7 4 1E7
DGD 6 4 DGD
RDGD 4 6 1E7
.MODEL DGD D(M=0.5 CJO=7500P VJ=0.00337)
M3 7 9 1 1 INTER
E3 9 1 4 1 -2
.ENDS
*
*             END OF SUBCIRCUIT
*-------------------------------------------------------------
*
*MTP12P10 model created using LAAS version
*
*            TMOS MODEL WITH SWITCHES  (SUBCIRCUIT)
*
.SUBCKT MTP12P10 20 10 30
RG 10 1 20
M1 2 1 3 3 DMOS L=1U W=1U
.MODEL DMOS PMOS (VTO=-3.58 KP=2 THETA=0.058 VMAX=5E6 LEVEL=3)
CGS 1 3 575P
RD 20 4 0.17
DDS 4 3 DDS
.MODEL DDS D(BV=100 M=0.37 CJO=949P VJ=0.609)
DBODY 20 3 DBODY
.MODEL DBODY D(IS=1.6E-12 N=1.08 RS=0.068 TT=0.10U)
RA 4 2 1E-3
RS 3 5 1M
LS 5 30 5N
M2 1 8 6 6 INTER
E2 8 6 4 1 2
.MODEL INTER PMOS (VTO=0 KP=10 LEVEL=1)
CGDMAX 7 4 1450P
RCGD 7 4 1E7
DGD 4 6 DGD
RDGD 4 6 1E7
.MODEL DGD D(M=0.39 CJO=1450P VJ=0.03)
M3 7 9 1 1 INTER
E3 9 1 4 1 -2
.ENDS
*
*               END OF SUBCIRCUIT
*-------------------------------------------------------------
*
*MTP2P50 model created using LAAS version
*
*            TMOS MODEL WITH SWITCHES  (SUBCIRCUIT)
*
.SUBCKT MTP2P50 20 10 30
RG 10 1 20
M1 2 1 3 3 DMOS L=1U W=1U
.MODEL DMOS PMOS (VTO=-3.95 KP=0.421 THETA=0.058 VMAX=5E6 LEVEL=3)
CGS 1 3 520P
RD 20 4 6.883
DDS 4 3 DDS
.MODEL DDS D(BV=500 M=0.45 CJO=400P VJ=0.037)
DBODY 20 3 DBODY
.MODEL DBODY D(IS=5E-11 N=1.12 RS=0.143 TT=1U)
RA 4 2 1E-3
RS 3 5 1M
LS 5 30 5N
M2 1 8 6 6 INTER
E2 8 6 4 1 2
.MODEL INTER PMOS (VTO=0 KP=10 LEVEL=1)
CGDMAX 7 4 1730P
RCGD 7 4 1E7
DGD 4 6 DGD
RDGD 4 6 1E7
.MODEL DGD D(M=0.418 CJO=1730P VJ=2.2E-3)
M3 7 9 1 1 INTER
E3 9 1 4 1 -2
.ENDS
*
*               END OF SUBCIRCUIT
*-------------------------------------------------------------
*
*---------      Added To version 1.01   -------------------------*
*
*MTM26N40E model created using LAAS version.
*
*           TMOS MODEL WITH SWITCHES (SUBCIRCUIT)
*
.SUBCKT MTM26N40E 20 10 30
RG 10 1 1
M1 2 1 3 3 DMOS L=1U W=1U
.MODEL DMOS NMOS (VTO=3.78 KP=24.6 THETA=0.04 VMAX=0.75E5 LEVEL=3)
CGS 1 3 4000P
RD 20 4 0.126
DDS 3 4 DDS
.MODEL DDS D(BV=400 M=0.54 CJO=2740P VJ=0.75)
DBODY 3 20 DBODY
.MODEL DBODY D(IS=8E-12 N=1.02 RS=0.02 TT=1060N)
RA 4 2 1E-3
RS 3 5 1M
LS 5 30 12.5N
M2 1 8 6 6 INTER
E2 8 6 4 1 2
.MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1)
CGDMAX 7 4 4000P
RCGD 7 4 1E7
DGD 6 4 DGD
RDGD 4 6 1E7
.MODEL DGD D(M=0.9 CJO=4000P VJ=0.634)
M3 7 9 1 1 INTER
E3 9 1 4 1 -2
.ENDS
*
*             END OF SUBCIRCUIT
* ---------------------------------------------------------
*MTH7N45 model created using LAAS version.
*
*           TMOS MODEL WITH SWITCHES (SUBCIRCUIT)
*
.SUBCKT MTH7N45 20 10 30
RG 10 1 1
M1 2 1 3 3 DMOS L=1U W=1U
.MODEL DMOS NMOS (VTO=3.45 KP=5.86 THETA=0.04 VMAX=0.8E5 LEVEL=3)
CGS 1 3 1150P
RD 20 4 0.48
DDS 3 4 DDS
.MODEL DDS D(BV=450 M=0.45 CJO=684P VJ=0.48)
DBODY 3 20 DBODY
.MODEL DBODY D(IS=4E-12 N=1.03 RS=0.04 TT=1000N)
RA 4 2 1E-3
RS 3 5 1M
LS 5 30 10N
M2 1 8 6 6 INTER
E2 8 6 4 1 2
.MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1)
CGDMAX 7 4 3800P
RCGD 7 4 1E7
DGD 6 4 DGD
RDGD 4 6 1E7
.MODEL DGD D(M=0.54 CJO=3700P VJ=0.0137)
M3 7 9 1 1 INTER
E3 9 1 4 1 -2
.ENDS
*
*             END OF SUBCIRCUIT
* ---------------------------------------------------------
*MTP50N05EL model created using LAAS version.
*
*           TMOS MODEL WITH SWITCHES (SUBCIRCUIT)
*
.SUBCKT MTP50N05EL 20 10 30
RG 10 1 1
M1 2 1 3 3 DMOS L=1U W=1U
.MODEL DMOS NMOS (VTO=1.72 KP=43 THETA=0.058 VMAX=2E5 LEVEL=3)
CGS 1 3 3300P
RD 20 4 0.017
DDS 3 4 DDS
.MODEL DDS D(BV=50 M=0.4 CJO=3070P VJ=0.667)
DBODY 3 20 DBODY
.MODEL DBODY D(IS=3E-11 N=1.07 RS=0.08 TT=130N)
RA 4 2 1E-3
RS 3 5 1M
LS 5 30 6N
M2 1 8 6 6 INTER
E2 8 6 4 1 2
.MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1)
CGDMAX 7 4 3200P
RCGD 7 4 1E7
DGD 6 4 DGD
RDGD 4 6 1E7
.MODEL DGD D(M=0.6 CJO=3200P VJ=0.188)
M3 7 9 1 1 INTER
E3 9 1 4 1 -2
.ENDS
*
*             END OF SUBCIRCUIT
* ---------------------------------------------------------
*MTP2N50 model created using LAAS version.
*
*           TMOS MODEL WITH SWITCHES (SUBCIRCUIT)
*
.SUBCKT MTP2N50 20 10 30
RG 10 1 1
M1 2 1 3 3 DMOS L=1U W=1U
.MODEL DMOS NMOS (VTO=3.67 KP=1.59 THETA=0.04 VMAX=1.3E5 LEVEL=3)
CGS 1 3 500P
RD 20 4 1.8
DDS 3 4 DDS
.MODEL DDS D(BV=500 M=0.52 CJO=210P VJ=0.74)
DBODY 3 20 DBODY
.MODEL DBODY D(IS=1.3E-12 N=1.03 RS=0.1 TT=880N)
RA 4 2 1E-3
RS 3 5 1M
LS 5 30 6N
M2 1 8 6 6 INTER
E2 8 6 4 1 2
.MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1)
CGDMAX 7 4 800P
RCGD 7 4 1E7
DGD 6 4 DGD
RDGD 4 6 1E7
.MODEL DGD D(M=0.455 CJO=800P VJ=7.7E-3)
M3 7 9 1 1 INTER
E3 9 1 4 1 -2
.ENDS
*
*             END OF SUBCIRCUIT
* ---------------------------------------------------------

*MTP15N05E model created using LAAS version.
*
*           TMOS MODEL WITH SWITCHES (SUBCIRCUIT)
*
.SUBCKT MTP15N05E 20 10 30
RG 10 1 1
M1 2 1 3 3 DMOS L=1U W=1U
.MODEL DMOS NMOS (VTO=3.55 KP=6.87 THETA=0.04 VMAX=1.6E5 LEVEL=3)
CGS 1 3 550P
RD 20 4 0.052
DDS 3 4 DDS
.MODEL DDS D(BV=60 M=0.4 CJO=724P VJ=0.65)
DBODY 3 20 DBODY
.MODEL DBODY D(IS=2E-12 N=1.03 RS=0.08 TT=77N)
RA 4 2 1E-3
RS 3 5 1M
LS 5 30 6N
M2 1 8 6 6 INTER
E2 8 6 4 1 2
.MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1)
CGDMAX 7 4 1100P
RCGD 7 4 1E7
DGD 6 4 DGD
RDGD 4 6 1E7
.MODEL DGD D(M=0.655 CJO=1100P VJ=0.671)
M3 7 9 1 1 INTER
E3 9 1 4 1 -2
.ENDS
*
*             END OF SUBCIRCUIT
* ---------------------------------------------------------
*MTP25N10E model created using LAAS version.
*
*           TMOS MODEL WITH SWITCHES (SUBCIRCUIT)
*
.SUBCKT MTP25N10E 20 10 30
RG 10 1 1
M1 2 1 3 3 DMOS L=1U W=1U
.MODEL DMOS NMOS (VTO=3.64 KP=20.5 THETA=0.04 VMAX=1.5E5 LEVEL=3)
CGS 1 3 2400P
RD 20 4 0.04
DDS 3 4 DDS
.MODEL DDS D(BV=100 M=0.42 CJO=2620P VJ=0.667)
DBODY 3 20 DBODY
.MODEL DBODY D(IS=2.5E-12 N=1.03 RS=0.088 TT=260N)
RA 4 2 1E-3
RS 3 5 1M
LS 5 30 6N
M2 1 8 6 6 INTER
E2 8 6 4 1 2
.MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1)
CGDMAX 7 4 1900P
RCGD 7 4 1E7
DGD 6 4 DGD
RDGD 4 6 1E7
.MODEL DGD D(M=0.8 CJO=1900P VJ=0.25)
M3 7 9 1 1 INTER
E3 9 1 4 1 -2
.ENDS
*
*             END OF SUBCIRCUIT
* ---------------------------------------------------------
*MTP3055EL model created using LAAS version.
*
*           TMOS MODEL WITH SWITCHES (SUBCIRCUIT)
*
.SUBCKT MTP3055EL 20 10 30
RG 10 1 1
M1 2 1 3 3 DMOS L=1U W=1U
.MODEL DMOS NMOS (VTO=1.9 KP=7.26 THETA=0.058 VMAX=2.5E5 LEVEL=3)
CGS 1 3 500P
RD 20 4 0.085
DDS 3 4 DDS
.MODEL DDS D(BV=60 M=0.35 CJO=604P VJ=0.39)
DBODY 3 20 DBODY
.MODEL DBODY D(IS=7.5E-13 N=1.02 RS=0.04 TT=45N)
RA 4 2 1E-3
RS 3 5 1M
LS 5 30 6N
M2 1 8 6 6 INTER
E2 8 6 4 1 2
.MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1)
CGDMAX 7 4 740P
RCGD 7 4 1E7
DGD 6 4 DGD
RDGD 4 6 1E7
.MODEL DGD D(M=0.57 CJO=740P VJ=0.099)
M3 7 9 1 1 INTER
E3 9 1 4 1 -2
.ENDS
*
*             END OF SUBCIRCUIT
* --------------------------------------------------------
*MTP7N20 model created using LAAS version.
*
*           TMOS MODEL WITH SWITCHES (SUBCIRCUIT)
*
.SUBCKT MTP7N20 20 10 30
RG 10 1 1
M1 2 1 3 3 DMOS L=1U W=1U
.MODEL DMOS NMOS (VTO=3.70 KP=2.76 THETA=0.04 VMAX=1.5E5 LEVEL=3)
CGS 1 3 350P
RD 20 4 0.42
DDS 3 4 DDS
.MODEL DDS D(BV=200 M=0.46 CJO=370P VJ=0.676)
DBODY 3 20 DBODY
.MODEL DBODY D(IS=7E-13 N=1.01 RS=0.22 TT=300N)
RA 4 2 1E-3
RS 3 5 1M
LS 5 30 6N
M2 1 8 6 6 INTER