motmos.lib

[电子线路模拟仿真软件].TINA.Pro.V.6.Educational-141M.zip

***************************************************
*          TMOS.LIB VERSION 2.0    Thursday, 21 December 1989
***************************************************
*
*     MOTOROLA/LAAS LIBRARY FOR MOTOROLA POWER MOSFET
*                      (TMOS) SPICE  MODEL
*
*           USING SWITCHES FOR THE CGD CAPACITOR
*
*       DEVELOPED BY LAAS / MOTOROLA TOULOUSE 1989
*
*         COPYING THIS LIBRARY IS WELCOMED AND ENCOURAGED,
*                      BUT IT IS NOT FOR COMMERCIAL USE
*
***************************************************
*Motorola reserves the right to make changes without further
*notice to any products herein to improve reliability, function or
*design.  Motorola does not assume any liability arising out of the
*application or use of any product or circuit described herein;
*neither does it convey any license under its patent rights nor the
*rights of others.  Motorola products are not authorized for use as
*components in life support devices or systems intended for
*surgical implant into the body or intended to support or sustain
*life.  Buyer agrees to notify Motorola of any such intended end
*use whereupon Motorola shall determine availability and suitability
*or its product or products for the use intended.  Motorola is a
*registered trademark of Motorola, Inc.  Motorola, Inc. is an Equal
*Employment Opportunity/Affirmative Action Employer.
***************************************************
*
*THIS FILE CONTAINS THE MODELS OF SEVERAL TMOS DEVICES
*LISTED BELOW:
*MTP3055E  MTP15N06E  MTP25N06L  MTP25N06  IRF541
*MTP35N06E  MTH40N06  MTH30N20  MTM15N40  MTP4N50
*MTH13N50  MTP6N60  MTM8N60  MTH8N60  MTP4N85 MTP3N100
*MTH5N100  MTP12P10  MTP2P50
*
*------------------ ADDED TO TMOS.LIB VERSION 1------------
*MTP25N10 MTP2N50 MTP7N20 MTH7N45  MTD4N20 MTD2N50
*MTD5N06 MTP25N10E MTM26N40E MTD10N05E MTP15N05E
*MTP50N05EL MTD3055EL MTP3055EL MTP40N06M MTP40N06M
*MTM10N100E MTM24N50E MTP50N06E MTD4P06 MTD2955 MTP20P06
*MTP8P10
*--------------------------------------------------------
*
*IN ORDER TO USE THIS LIBRARY YOU NEED TO PUT IN YOUR  SOURCE FILE
* XXX.CIR THE COMMAND
* X1 2 1 3 MTP25N06L TO CALL THAT DEVICE
* .LIB TMOS.LIB TO CALL THIS LIBRARY
*
*--------------------------------------------------------
*
*MTP3055E model created using LAAS version.
*
*          TMOS MODEL WITH SWITCHES (SUBCIRCUIT)
*
.SUBCKT MTP3055E 20 10 30
RG 10 1 10
M1 2 1 3 3 DMOS L=1U W=1U
.MODEL DMOS NMOS (VTO=3.32 KP=5.5 THETA=0.058 VMAX=1.5E5 LEVEL=3)
CGS 1 3 300P
RD 20 4 0.078
DDS 3 4 DDS
.MODEL DDS D(BV=60 M=0.42 CJO=600P VJ=0.60)
DBODY 3 20 DBODY
.MODEL DBODY D(IS=1.1E-11 N=1.03 RS=0.050 TT=200N)
RA 4 2 1E-3
RS 3 5 1M
LS 5 30 5N
M2 1 8 6 6 INTER
E2 8 6 4 1 2
.MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1)
CGDMAX 7 4 605P
RCGD 7 4 1E7
DGD 6 4 DGD
RDGD 4 6 1E7
.MODEL DGD D(M=0.53 CJO=605P VJ=0.08)
M3 7 9 1 1 INTER
E3 9 1 4 1 -2
.ENDS
*
*             END OF SUBCIRCUIT
*------------------------------------------------------------
*
*MTP15N06E model created using LAAS version.
*
*         TMOS MODEL WITH SWITCHES (SUBCIRCUIT)

.SUBCKT MTP15N06E 20 10 30
RG 10 1 10
M1 2 1 3 3 DMOS L=1U W=1U
.MODEL DMOS NMOS (VTO=3.12 KP=7.30 THETA=0.058 VMAX=1.2E5 LEVEL=3)
CGS 1 3 500P
RD 20 4 0.09
DDS 3 4 DDS
.MODEL DDS D(BV=60 M=0.42 CJO=710P VJ=0.7)
DBODY 3 20 DBODY
.MODEL DBODY D(IS=1.8E-12 N=1.02 RS=0.06 TT=30N)
RA 4 2 1E-3
RS 3 5 1M
LS 5 30 5N
M2 1 8 6 6 INTER
E2 8 6 4 1 2
.MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1)
CGDMAX 7 4 1000P
RCGD 7 4 1E7
DGD 6 4 DGD
RDGD 4 6 1E7
.MODEL DGD D(M=0.564 CJO=1000P VJ=0.155)
M3 7 9 1 1 INTER
E3 9 1 4 1 -2
.ENDS
*
*             END OF SUBCIRCUIT
*------------------------------------------------------------
*
*MTP25N06L model created using LAAS version.
*
*          TMOS MODEL WITH SWITCHES (SUBCIRCUIT)
*
.SUBCKT MTP25N06L 20 10 30
RG 10 1 7
M1 2 1 3 3 DMOS L=1U W=1U
.MODEL DMOS NMOS (VTO=1.7 KP=8 THETA=0.12 VMAX=5E6 LEVEL=3)
CGS 1 3 1130P
RD 20 4 0.015
DDS 3 4 DDS
.MODEL DDS D(BV=60 M=0.357 CJO=1200P VJ=0.437)
DBODY 3 20 DBODY
.MODEL DBODY D(IS=9E-12 N=1.03 RS=0.02 TT=18N)
RA 4 2 1E-3
RS 3 5 1M
LS 5 30 5N
M2 1 8 6 6 INTER
E2 8 6 4 1 2
.MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1)
CGDMAX 7 4 3040P
RCGD 7 4 1E7
DGD 6 4 DGD
RDGD 4 6 1E7
.MODEL DGD D(M=0.53 CJO=3040P VJ=0.0774)
M3 7 9 1 1 INTER
E3 9 1 4 1 -2
.ENDS
*
*             END OF SUBCIRCUIT
*-------------------------------------------------------------
*
*MTP25N06 model created using LAAS version.
*
*          TMOS MODEL WITH SWITCHES (SUBCIRCUIT)
*
.SUBCKT MTP25N06 20 10 30
RG 10 1 7
M1 2 1 3 3 DMOS L=1U W=1U
.MODEL DMOS NMOS (VTO=3.84 KP=7 THETA=0.058 VMAX=2E5 LEVEL=3)
CGS 1 3 662P
RD 20 4 0.04
DDS 3 4 DDS
.MODEL DDS D(BV=60 M=0.3 CJO=1178P VJ=0.29)
DBODY 3 20 DBODY
.MODEL DBODY D(IS=4.5E-12 N=1.02 RS=0.025 TT=22N)
RA 4 2 1E-3
RS 3 5 1M
LS 5 30 5N
M2 1 8 6 6 INTER
E2 8 6 4 1 2
.MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1)
CGDMAX 7 4 1320P
RCGD 7 4 1E7
DGD 6 4 DGD
RDGD 4 6 1E7
.MODEL DGD D(M=0.548 CJO=1320P VJ=0.36)
M3 7 9 1 1 INTER
E3 9 1 4 1 -2
.ENDS
*
*             END OF SUBCIRCUIT
*------------------------------------------------------------
*
*
*IRF541 model created using LAAS version.
*
*          TMOS MODEL WITH SWITCHES (SUBCIRCUIT)
*
.SUBCKT IRF541 20 10 30
RG 10 1 9
M1 2 1 3 3 DMOS L=1U W=1U
.MODEL DMOS NMOS (VTO=3.87 KP=11.4 THETA=0.058 VMAX=1.2E5 LEVEL=3)
CGS 1 3 965P
RD 20 4 0.03
DDS 3 4 DDS
.MODEL DDS D(BV=60 M=0.355 CJO=1836P VJ=0.49)
DBODY 3 20 DBODY
.MODEL DBODY D(IS=4E-12 N=1.01 RS=0.05 TT=36N)
RA 4 2 1E-3
RS 3 5 1M
LS 5 30 4.35N
M2 1 8 6 6 INTER
E2 8 6 4 1 2
.MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1)
CGDMAX 7 4 2400P
RCGD 7 4 1E7
DGD 6 4 DGD
RDGD 4 6 1E7
.MODEL DGD D(M=0.58 CJO=2400P VJ=0.384)
M3 7 9 1 1 INTER
E3 9 1 4 1 -2
.ENDS
*
*             END OF SUBCIRCUIT
*-------------------------------------------------------------
*
*MTP35N06E model created using LAAS version.
*
*           TMOS MODEL WITH SWITCHES (SUBCIRCUIT)
*
.SUBCKT MTP35N06E 20 10 30
RG 10 1 7
M1 2 1 3 3 DMOS L=1U W=1U
.MODEL DMOS NMOS (VTO=2.81 KP=30.6 THETA=0.058 VMAX=0.7E5 LEVEL=3)
CGS 1 3 1070P
RD 20 4 0.046
DDS 3 4 DDS
.MODEL DDS D(BV=60 M=0.44 CJO=2637P VJ=0.78)
DBODY 3 20 DBODY
.MODEL DBODY D(IS=8.2E-12 N=1.02 RS=0.05 TT=26N)
RA 4 2 1E-3
RS 3 5 1M
LS 5 30 5N
M2 1 8 6 6 INTER
E2 8 6 4 1 2
.MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1)
CGDMAX 7 4 3780P
RCGD 7 4 1E7
DGD 6 4 DGD
RDGD 4 6 1E7
.MODEL DGD D(M=0.66 CJO=3780P VJ=0.23)
M3 7 9 1 1 INTER
E3 9 1 4 1 -2
.ENDS
*
*             END OF SUBCIRCUIT
*-------------------------------------------------------------
*
*MTH40N06 model created using LAAS version.
*
*           TMOS MODEL WITH SWITCHES (SUBCIRCUIT)
*
.SUBCKT MTH40N06 20 10 30
RG 10 1 12
M1 2 1 3 3 DMOS L=1U W=1U
.MODEL DMOS NMOS (VTO=3.77 KP=27.2 THETA=0.058 VMAX=1E5 LEVEL=3)
CGS 1 3 1782P
RD 20 4 0.015
DDS 3 4 DDS
.MODEL DDS D(BV=60 M=0.364 CJO=4134P VJ=0.558)
DBODY 3 20 DBODY
.MODEL DBODY D(IS=2E-11 N=1.03 RS=0.014 TT=26N)
RA 4 2 1E-3
RS 3 5 1M
LS 5 30 4N
M2 1 8 6 6 INTER
E2 8 6 4 1 2
.MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1)
CGDMAX 7 4 5840P
RCGD 7 4 1E7
DGD 6 4 DGD
RDGD 4 6 1E7
.MODEL DGD D(M=0.55 CJO=5840P VJ=0.25)
M3 7 9 1 1 INTER
E3 9 1 4 1 -2
.ENDS
*
*             END OF SUBCIRCUIT
*-------------------------------------------------------------
*
*MTH30N20 model created using LAAS version.
*
*           TMOS MODEL WITH SWITCHES (SUBCIRCUIT)
*
.SUBCKT MTH30N20 20 10 30
RG 10 1 7
M1 2 1 3 3 DMOS L=1U W=1U
.MODEL DMOS NMOS (VTO=3.74 KP=19.3 THETA=0.058 VMAX=1.4E5 LEVEL=3)
CGS 1 3 1580P
RD 20 4 0.062
DDS 3 4 DDS
.MODEL DDS D(BV=200 M=0.46 CJO=2594P VJ=0.748)
DBODY 3 20 DBODY
.MODEL DBODY D(IS=1.1E-11 N=1.03 RS=0.050 TT=200N)
RA 4 2 1E-3
RS 3 5 1M
LS 5 30 4N
M2 1 8 6 6 INTER
E2 8 6 4 1 2
.MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1)
CGDMAX 7 4 5850P
RCGD 7 4 1E7
DGD 6 4 DGD
RDGD 4 6 1E7
.MODEL DGD D(M=0.5 CJO=5850P VJ=0.032)
M3 7 9 1 1 INTER
E3 9 1 4 1 -2
.ENDS
*
*             END OF SUBCIRCUIT
*-------------------------------------------------------------
*
*MTM15N40 model created using LAAS version.
*
*           TMOS MODEL WITH SWITCHES (SUBCIRCUIT)
*
.SUBCKT MTM15N40 20 10 30
RG 10 1 8
M1 2 1 3 3 DMOS L=1U W=1U
.MODEL DMOS NMOS (VTO=2.86 KP=12.1 THETA=0.058 VMAX=1.5E5 LEVEL=3)
CGS 1 3 1300P
RD 20 4 0.22
DDS 3 4 DDS
.MODEL DDS D(BV=400 M=0.41 CJO=989P VJ=0.443)
DBODY 3 20 DBODY
.MODEL DBODY D(IS=6.6E-12 N=1.02 RS=0.028 TT=340N)
RA 4 2 1E-3
RS 3 5 1M
LS 5 30 10N
M2 1 8 6 6 INTER
E2 8 6 4 1 2
.MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1)
CGDMAX 7 4 7126P
RCGD 7 4 1E7
DGD 6 4 DGD
RDGD 4 6 1E7
.MODEL DGD D(M=0.61 CJO=7126P VJ=0.071)
M3 7 9 1 1 INTER
E3 9 1 4 1 -2
.ENDS
*
*             END OF SUBCIRCUIT
*-------------------------------------------------------------
*
*
*MTP4N50 model created using LAAS version.
*
*           TMOS MODEL WITH SWITCHES (SUBCIRCUIT)
*
.SUBCKT MTP4N50 20 10 30
RG 10 1 9
M1 2 1 3 3 DMOS L=1U W=1U
.MODEL DMOS NMOS (VTO=3.72 KP=2.86 THETA=0.058 VMAX=1.5E5 LEVEL=3)
CGS 1 3 540P
RD 20 4 1.09
DDS 3 4 DDS
.MODEL DDS D(BV=500 M=0.47 CJO=376P VJ=0.526)
DBODY 3 20 DBODY
.MODEL DBODY D(IS=1.2E-11 N=1.05 RS=0.143 TT=1.2U)
RA 4 2 1E-3
RS 3 5 1M
LS 5 30 5N
M2 1 8 6 6 INTER
E2 8 6 4 1 2
.MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1)
CGDMAX 7 4 1740P
RCGD 7 4 1E7
DGD 6 4 DGD
RDGD 4 6 1E7
.MODEL DGD D(M=0.543 CJO=1740P VJ=0.0132)
M3 7 9 1 1 INTER
E3 9 1 4 1 -2
.ENDS
*
*             END OF SUBCIRCUIT
*-------------------------------------------------------------
*
*MTH13N50 model created using LAAS version.
*
*           TMOS MODEL WITH SWITCHES (SUBCIRCUIT)
*
.SUBCKT MTH13N50 20 10 30
RG 10 1 10
M1 2 1 3 3 DMOS L=1U W=1U
.MODEL DMOS NMOS (VTO=3.46 KP=8.07 THETA=0.058 VMAX=1.5E5 LEVEL=3)
CGS 1 3 1675P
RD 20 4 0.25
DDS 3 4 DDS
.MODEL DDS D(BV=500 M=0.5 CJO=995P VJ=0.77)
DBODY 3 20 DBODY
.MODEL DBODY D(IS=1.2E-11 N=1.02 RS=0.025 TT=877N)
RA 4 2 1E-3
RS 3 5 1M
LS 5 30 8N
M2 1 8 6 6 INTER
E2 8 6 4 1 2
.MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1)
CGDMAX 7 4 7000P
RCGD 7 4 1E7
DGD 6 4 DGD
RDGD 4 6 1E7
.MODEL DGD D(M=0.54 CJO=7000P VJ=0.021)
M3 7 9 1 1 INTER
E3 9 1 4 1 -2
.ENDS
*
*             END OF SUBCIRCUIT
*-------------------------------------------------------------
*
*MTP6N60 model created using LAAS version.
*
*          TMOS MODEL WITH SWITCHES (SUBCIRCUIT)
*
.SUBCKT MTP6N60 20 10 30
RG 10 1 8
M1 2 1 3 3 DMOS L=1U W=1U
.MODEL DMOS NMOS (VTO=3.23 KP=5 THETA=0.058 VMAX=1.5E5 LEVEL=3)
CGS 1 3 1116P
RD 20 4 0.885
DDS 3 4 DDS
.MODEL DDS D(BV=600 M=0.51 CJO=700P VJ=0.6)
DBODY 3 20 DBODY
.MODEL DBODY D(IS=1.3E-11 N=1.04 RS=0.214 TT=1.125U)
RA 4 2 1E-3
RS 3 5 1M
LS 5 30 4N
M2 1 8 6 6 INTER
E2 8 6 4 1 2
.MODEL INTER NMOS (VTO=0 KP=10 LEVEL=1)
CGDMAX 7 4 3550P
RCGD 7 4 1E7
DGD 6 4 DGD
RDGD 4 6 1E7
.MODEL DGD D(M=0.518 CJO=3550P VJ=0.0077)
M3 7 9 1 1 INTER
E3 9 1 4 1 -2
.ENDS
*
*             END OF SUBCIRCUIT
*-------------------------------------------------------------
*
*MTM8N60 model created using LAAS version.
*
*           TMOS MODEL WITH SWITCHES (SUBCIRCUIT)
*
.SUBCKT MTM8N60 20 10 30
RG 10 1 7
M1 2 1 3 3 DMOS L=1U W=1U
.MODEL DMOS NMOS (VTO=3.1 KP=7.6 THETA=0.058 VMAX=2.6E5 LEVEL=3)
CGS 1 3 2683P
RD 20 4 0.44
DDS 3 4 DDS
.MODEL DDS D(BV=600 M=0.475 CJO=900P VJ=0.73)