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+ M = 0.1000
*****************************************************************
* SPICE2G6 MODEL OF THE DIODE SMBD2837 (SOT-23) *
* REV: 98.1 DANALYSE GMBH BERLIN (27.07.1998) *
*****************************************************************
.SUBCKT SMBD2837C 1 2
D 3 4 SMBD2837
L1 1 3 0.350N
L2 4 2 0.350N
.ENDS
.MODEL SMBD2837 D
+ IS = 2.7838E-09
+ N = 1.8703
+ RS = 1.3548
+ EG = 1.0637
+ XTI = 1.5000
+ CJO = 0.6000E-12
+ VJ = 0.2000
+ M = 0.1000
*****************************************************************
* SPICE2G6 MODEL OF THE DIODE SMBD2838 (SOT-23) *
* REV: 98.1 DANALYSE GMBH BERLIN (27.07.1998) *
*****************************************************************
.SUBCKT SMBD2838C 1 2
D 3 4 SMBD2838
L1 1 3 0.350N
L2 4 2 0.350N
.ENDS
.MODEL SMBD2838 D
+ IS = 2.7838E-09
+ N = 1.8703
+ RS = 1.3548
+ EG = 1.0637
+ XTI = 1.5000
+ CJO = 0.6000E-12
+ VJ = 0.2000
+ M = 0.1000
*****************************************************************
* SPICE2G6 MODEL OF THE DIODE SMBD6050 (SOT-23) *
* REV: 98.1 DANALYSE GMBH BERLIN (27.07.1998) *
*****************************************************************
.SUBCKT SMBD6050C 1 2
D 3 4 SMBD6050
L1 1 3 0.350N
L2 4 2 0.350N
.ENDS
.MODEL SMBD6050 D
+ IS = 2.7838E-09
+ N = 1.8703
+ RS = 1.3548
+ EG = 1.0637
+ XTI = 1.5000
+ CJO = 0.6000E-12
+ VJ = 0.2000
+ M = 0.1000
*****************************************************************
* SPICE2G6 MODEL OF THE DIODE SMBD6100 (SOT-23) *
* REV: 98.1 DANALYSE GMBH BERLIN (27.07.1998) *
*****************************************************************
.SUBCKT SMBD6100C 1 2
D 3 4 SMBD6100
L1 1 3 0.350N
L2 4 2 0.350N
.ENDS
.MODEL SMBD6100 D
+ IS = 2.7838E-09
+ N = 1.8703
+ RS = 1.3548
+ EG = 1.0637
+ XTI = 1.5000
+ CJO = 0.6000E-12
+ VJ = 0.2000
+ M = 0.1000
*****************************************************************
* SPICE2G6 MODEL OF THE DIODE SMBD7000 (SOT-23) *
* REV: 98.1 DANALYSE GMBH BERLIN (27.07.1998) *
*****************************************************************
.SUBCKT SMBD7000C 1 2
D 3 4 SMBD7000
L1 1 3 0.350N
L2 4 2 0.350N
.ENDS
.MODEL SMBD7000 D
+ IS = 2.7838E-09
+ N = 1.8703
+ RS = 1.3548
+ EG = 1.0637
+ XTI = 1.5000
+ CJO = 0.6000E-12
+ VJ = 0.2000
+ M = 0.1000
*****************************************************************
* SPICE2G6 MODEL OF THE DIODE BAW101 (SOT-23) *
* REV: 98.1 DANALYSE GMBH BERLIN (27.07.1998) *
*****************************************************************
.SUBCKT BAW101C 1 2
D 3 4 BAW101
L1 1 3 0.350N
L2 4 2 0.350N
.ENDS
.MODEL BAW101 D
+ IS = 0.2583E-12
+ N = 1.1790
+ RS = 3.0000
+ EG = 1.1073
+ XTI = 4.4349
+ CJO = 6.2000E-12
+ VJ = 0.7000
+ M = 0.5000
*****************************************************************
.MODEL BA582 D (IS=185F RS=.30 N=1.305 BV=70 IBV=.1N
+ CJO=1.17P VJ=.12 M=.096 TT=125N)
* SIEMENS 40 Volt 125ns Si-PIN-Switch 17-03-1996 Moschovis
*****************************************************************
.MODEL BA592 D (IS=185F RS=.30 N=1.305 BV=70 IBV=.1N
+ CJO=1.17P VJ=.12 M=.096 TT=125n)
* SIEMENS 40 Volt 125ns Si-PIN-Switch 17-03-1996 Moschovis
*****************************************************************
.MODEL BA595 D (IS=1.355n RS=2.6 N=2.04 BV=50 IBV=5u
+ CJO=0.35P VJ=.8 M=1.2 TT=1.6u)
* SIEMENS 50 Volt 1.6us Si-PIN-Switch 17-03-1997 Moschovis
*****************************************************************
.MODEL BAR64 D (IS=880p RS=.9 N=1.305 BV=70 IBV=.1N
+ CJO=0.33P VJ=.8 M=.2 TT=1.25u)
* SIEMENS 40 Volt 125ns Si-PIN-Switch 17-03-1996 Moschovis
*****************************************************************
.MODEL BAS116 D (
+ AF= 1.00E+00 BV= 7.50E+01 CJO= 1.83E-12 EG= 1.11E+00
+ FC= 5.00E-01 IBV= 1.00E-04 IS= 1.48E-13 KF= 0.00E+00
+ M= 2.62E-01 N= 1.33E+00 RS= 8.48E-01 TT= 8.66E-09
+ VJ= 3.44E-01 XTI= 3.00E+00)
*****************************************************************
.MODEL BAS125 D (IS=1.45N RS=12 N=1.03 XTI=1.6 EG=.68
+ CJO=.95P M=.2 VJ=.24 FC=.5 BV=25 IBV=100n TT=25P)
* ISR=15n NR=4k IKF=10m
* for 27C reverse current simulation use GMIN=1e-9
* 17.12.1993 SIEMENS PD1 KURTH
*****************************************************************
.MODEL BAS21 D (
+ AF= 1.00E+00 BV= 2.50E+02 CJO= 6.64E-13 EG= 1.11E+00
+ FC= 5.00E-01 IBV= 1.00E-04 IS= 6.42E-09 KF= 0.00E+00
+ M= 1.00E-01 N= 1.98E+00 RS= 9.12E-01 TT= 7.21E-08
+ VJ= 2.00E+00 XTI= 3.00E+00)
*****************************************************************
.MODEL BAS40 D (IS=8N RS=7.8 N=1.04 XTI=1.8 EG=.68
+ CJO=3P M=.42 VJ=.4 FC=.5 BV=40 IBV=100n TT=25P)
* ISR=5n NR=1k IKF=10m
* for 27C reverse current simulation use: GMIN=1e-9
* 17.12.1993 SIEMENS PD1 KURTH
*****************************************************************
.MODEL BAS70 D (IS=3N N=1.06 RS=29 XTI=1.8 EG=.68
+ CJO=1.55P M=.29 VJ=.36 FC=.5 BV=70 IBV=100n TT=25P)
* ISR=2.5n NR=1k IKF=5m
* for 27C reverse current simulation use: GMIN=.5e-9
* 17.12.1993 SIEMENS PD1 KURTH
*****************************************************************
.MODEL BAT14-098 D (Is=77p N=1.027 Rs=4 Xti=1.8 Eg=.68 Cjo=270f M=.078
+ Vj=.25 Fc=.5 Bv=4 Ibv=5u Tt=25p)
* Case SOD123, single diode
* Add R=3.3MEG parallel for better IR and R0 simulation
* 29.11.1994 SIEMENS HL EH PD1 Kurth
*****************************************************************
.MODEL BAT15-099R D (Is=150n N=1.04 Rs=2.6 Xti=1.8 Eg=.68 Cjo=365f M=.061
+ Vj=.12 Fc=.5 Bv=4 Ibv=10u Tt=25p)
* Case SOT143, 4-diode-chip-ring 1-3-2-4-1, I/O connection 1-2 / 4-3
* Data for each diode, add R=1.5MEG parallel to each diode for better IR and
* R0 simulation
* 28.10.1994 SIEMENS HL EH PD1 Kurth
*****************************************************************
.MODEL BAT15-03W D (Is=130n N=1.08 Rs=4.5 Xti=1.8 Eg=.68 Cjo=260f M=.047
+ Vj=.11 Fc=.5 Bv=4 Ibv=10u Tt=25p)
* Case SOD323, single diode
* Add R=3.3MEG parallel for better IR and R0 simulation
* 10.11.1994 SIEMENS HL EH PD1 Kurth
*****************************************************************
.MODEL BAT15-099 D (Is=130n N=1.08 Rs=4.5 Xti=1.8 Eg=.68 Cjo=285f M=.043
+ Vj=.11 Fc=.5 Bv=4 Ibv=10u Tt=25p)
* Case SOT143, 2 diodes, connection pins 4-1 / 2-3
* Data for each diode, add R=3.3MEG parallel to each diode for better IR and
* R0 simulation
* 10.11.1994 SIEMENS HL EH PD1 Kurth
*****************************************************************
.MODEL BAT15-098 D (Is=130n N=1.08 Rs=4.5 Xti=1.8 Eg=.68 Cjo=285f M=.043
+ Vj=.11 Fc=.5 Bv=4 Ibv=10u Tt=25p)
* Case SOD123, single diode
* Add R=3.3MEG parallel for better IR and R0 simulation
* 10.11.1994 SIEMENS HL EH PD1 Kurth
*****************************************************************
.MODEL BAT15-04 D (Is=130n N=1.08 Rs=4.5 Xti=1.8 Eg=.68 Cjo=260f M=.047
+ Vj=.11 Fc=.5 Bv=4 Ibv=10u Tt=25p)
* Case SOT23, 2 diodes, connection pins 1-3 / 3-2
* Data for each diode, add R=3.3MEG parallel to each diode for better IR and
* R0 simulation
* 10.11.1994 SIEMENS HL EH PD1 Kurth
*****************************************************************
* BAT18 Diode Model
.MODEL BAT18 D (IS=185F RS=.30 N=1.305 BV=70 IBV=.1N
+ CJO=1.17P VJ=.12 M=.096 TT=125N)
* SIEMENS 40 Volt 125ns Si-PIN-Switch 17-03-1996 Moschovis
*****************************************************************
* BAT62 Diode Model
.MODEL BAT62 D (IS=120N RS=200 N=1.04 XTI=1.8 EG=.68
+ CJO=.35P M=.14 VJ=.4 FC=.5 BV=40 IBV=5U TT=25P)
* for 27C reverse current simulation use: GMIN=3e-8
* 20.12.1993 SIEMENS PD1 KURTH
*****************************************************************
* BAT63 Diode Model
.MODEL BAT63 D (IS=656N RS=1.1 N=1.041 XTI=2.8 EG=1.1
+ CJO=.4814P M=.10 VJ=1.249 FC=.5 BV=4 IBV=5U TT=25P)
* 20.03.1997 SIEMENS PD1 Moschovis
*****************************************************************
.MODEL BAT64 D (
+ AF= 1.00E+00 BV= 3.00E+01 CJO= 6.59E-12 EG= 1.11E+00
+ FC= 5.00E-01 IBV= 1.00E-04 IS= 6.97E-09 KF= 0.00E+00
+ M= 3.96E-01 N= 1.01E+00 RS= 1.84E+00 TT= 1.00E-10
+ VJ= 3.42E-01 XTI= 3.00E+00)
*****************************************************************
* BAT65 Diode Model
.MODEL BAT65 D (Is=80n N=1.02 Rs=0.2152 Xti=5 Eg=1.11 Cjo=31.4p M=0.6196
+ Vj=.8 Fc=.5 Bv=40 Ibv=100u TT=60p)
* Case SOT223, single diode
* 26.09.1996 SIEMENS HL EH PD 1 Moschovis
*****************************************************************
* BAT66 Diode Model
.MODEL BAT66 D (Is=243.5n N=1.001 Rs=0.1401 Xti=3 Eg=1.11 Cjo=170.5p M=0.548
+ Vj=.4803 Fc=.5 Bv=30 Ibv=100u TT=30p)
* Case SOT223, single diode
* 26.09.1996 SIEMENS HL EH PD 1 Moschovis
*****************************************************************
* BAT68 Diode Model
.MODEL BAT68 D (IS=8N RS=2 N=1.05 XTI=1.8 EG=.68
+ CJO=.77P M=.075 VJ=.1 FC=.5 BV=8 IBV=1U TT=25P)
* 23.12.1993 SIEMENS PD1 KURTH
*****************************************************************
.MODEL BAW78D D (
+ AF= 1.00E+00 BV= 4.00E+02 CJO= 5.40E-12 EG= 1.11E+00
+ FC= 5.00E-01 IBV= 1.00E-04 IS= 3.08E-11 KF= 0.00E+00
+ M= 4.62E-01 N= 1.51E+00 RS= 4.04E-01 TT= 1.44E-06
+ VJ= 8.00E-01 XTI= 3.00E+00)
*****************************************************************
* BB515 Diode Model
.MODEL BB515 D (IS=2F RS=.05 N=1.045 BV=32 IBV=100N XTI=3 EG=1.11
+ CJO=25.5P VJ=2.5 M=1 TT=14.4N)
* Hyperabrupt Diode, M = f(VR)! Above approximation for Capacitance in
* VR-range 1..28V
* VR-range 0..6V: CJO=25.82P VJ=1.59 M=0.722
* VR-range 0..5V: CJO=25.86P VJ=1.38 M=0.66
* VR-range 0..3V: CJO=25.87P VJ=1.167 M=0.59
* Reverse current simulation: ISR=4.1p NR=2
* For Capacitance Q-factor add RS=0.5 externally or (degrades VF/IF)
* internally
* chip D190. 25.08.1994 SIEMENS HL EH PD1 Kurth
*****************************************************************
* BB535 Diode Model
.MODEL BB535 D (IS=1.75E-15 N=1.043 RS=60E-3 XTI=3 EG=1.11 CJO=25.31E-12
+ M=1.064 VJ=3.022 FC=.5 BV=32 IBV=100E-9 TT=120E-9)
* hyperabrupt Diode, M=f(VR)! C-curve approximated between VR=1..28V
* VR range 0..6V: CJO=26.65pF VJ=1.51 M=0.69
* VR range 0..4V: CJO=26.7pF VJ=1.28 M=0.62
* Model includes Case capacitance Cc=0.11pF
* 07.09.96 SIEMENS PD1 Moschovis
*****************************************************************
* BB545 Diode Model
.MODEL BB545 D (IS=110.11E-15 RS=0.24545 N=1.2034 XTI=3 EG=1.11
+CJo=38.264P M=0.87698 Vj=0.91294 FC=0 BV=30 IBV=5E-6 TT=80N)
* Model includes Case capacitance Cc=0.11pF
* 23.10.96 SIMENS HL EH PD 1 Moschovis
*****************************************************************
* BB639 Diode Model
.MODEL BB639 D (IS=4E-15 N=1.035 RS=.12 XTI=3 EG=1.11 CJO=55.88E-12
+ M=1.286 VJ=2.922 FC=.5 BV=32 IBV=100E-9 TT=160E-9)
* hyperabrupt Diode, M=f(VR)! C-curve approximated between VR=1..28V
* VR range 0..6V: CJO=55.9pF VJ=2.08 M=0.94
* VR range 0..4V: CJO=55.9pF VJ=1.71 M=0.81
* 07.09.95 SIEMENS PD1
* Model includes Case capacitance Cc=0.11pF
*****************************************************************
* BB804 Diode Model
.MODEL BB804 D (IS=48F N=1.13 RS=.18 XTI=3 EG=1.11 CJO=80.6P M=.47
+ VJ=.8 FC=.5 BV=20 IBV=.1U TT=137N)
* T=27C
* BB804-typical (group 2), SIEMENS HL EH PD1 KTH 25.07.94
*****************************************************************
* BB814 Diode Model
.MODEL BB814 D (IS=7f N=1.012 RS=.18 XTI=3 EG=1.11 CJO=83.9p M=.775
+ VJ=1.6 FC=.5 BV=20 IBV=100n TT=137n)
* IKF=1 ISR=10p NR=1K
* hyperabrupt Diode, M=f(VR)! C-curve approximated between VR=1..9V
* BB814-typical, SIEMENS HL EH PD1 KTH
*****************************************************************
* BB833 Diode Model
.MODEL BB833 D (IS=42.156E-15 N=1.1718 RS=.10785 XTI=3 EG=1.11 CJO=29.033E-12
+ M=0.90022 VJ=.39089 FC=.5 BV=32 IBV=5E-6 TT=120E-9)
* created using Parts release 6.3 on 02/19/97 at 09:16
* Parts is a MicroSim product.
*****************************************************************
* BB914 Diode Model
.MODEL BB914 D (IS=10.00E-15 N=1.020 RS=.28 IKF=0 XTI=3 EG=1.11
+ CJO=75.54E-12 M=1.161 VJ=3.445 FC=.5 ISR=100E-12 NR=2 BV=20 IBV=100E-9
+ TT=137.0E-9)
* created using Parts release 6.1 on 06/20/95 at 17:40
* Parts is a MicroSim product.
* BB914 - typical , SIEMENS HL EH PD 1 MOSCHOVIS
*****************************************************************
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