readwriteeeprom.lis

来自「单片机开发资料光盘-双龙-686M.zip」· LIS 代码 · 共 47 行

                         .module ReadWriteEEPROM.c
                         .area text
 0000                   .dbfile E:\grc\licc\例子10.3.3\ReadWriteEEPROM.c
 0000                   .dbfunc s main _main fI
                       ;           temp -> R20
                       ;              i -> R20
                         .even
 0000                 _main::
 0000                   .dbline 7{
                       ; // These work for devices with more than 256 bytes of EEPROM
                       ; //int EEPROMwrite( int location, unsigned char);
                       ; //unsigned char EEPROMread( int);
                       ; #include <io8515.h>
                       ; #include <eeprom.h>
                       ; void main(void)
                       ; {
 0000                   .dbline 8
                       ;   unsigned char temp =0xaa,i;
 0000 4AEA              ldi R20,170
 0002                   .dbline 9
                       ;     EEPROMwrite(0x20,temp); /* 写E2PROM 地址0x20  */
 0002 242F              mov R18,R20
 0004 00E2              ldi R16,32
 0006 10E0              ldi R17,0
 0008 00D0              rcall _EEPROMwrite
 000A                   .dbline 10
                       ;     i=EEPROMread(0x20);     /* 读E2PROM 地址 0x20 */
 000A 00E2              ldi R16,32
 000C 10E0              ldi R17,0
 000E 00D0              rcall _EEPROMread
 0010 402F              mov R20,R16
 0012                   .dbline 11
                       ;      i++;
 0012 4395              inc R20
 0014                   .dbline 12
                       ;     EEPROMwrite(0x30,i);
 0014 242F              mov R18,R20
 0016 00E3              ldi R16,48
 0018 10E0              ldi R17,0
 001A 00D0              rcall _EEPROMwrite
 001C                   .dbline 13}
                       ; }     
 001C                 L1:
 001C 0895              ret
 001E                   .dbsym r temp 20 c
 001E                   .dbsym r i 20 c