motorola.lib

通信原理-高频电子电路CAI-340页-22.2M-ppt版.zip

+TPG     = 1
+XJ      = 0
+LD      = 0
+UO      = 600
+UCRIT   = 1000
+UEXP    = 0
+UTRA    = 0
+VMAX    = 0
+NEFF    = 1
+KF      = 0
+AF      = 1
+FC      = 0.5
+DELTA   = 0
+THETA   = 0
+ETA     = 0
+KAPPA   = 0.2)
*
*--------------------------------------------------------------------------
*
.MODEL DGD D  ( 
+IS      = 1e-15
+RS      = 0
+N       = 1000
+TT      = 0
+CJO     = 2.75581e-10
+VJ      = 1.45842
+M       = 0.657579
+EG      = 1.11
+XTI     = 3
+KF      = 0
+AF      = 1
+FC      = 0.5
+BV      = 10000
+IBV     = 0.001)
*
*--------------------------------------------------------------------------
*
.MODEL DBODY D  ( 
+IS      = 1.12093e-12
+RS      = 0
+N       = 1.05243
+TT      = 1.2e-07
+CJO     = 8.78927e-10
+VJ      = 0.821526
+M       = 0.421618
+EG      = 1.11
+XTI     = 4
+KF      = 0
+AF      = 1
+FC      = 0.5
+BV      = 74.2776
+IBV     = 0.00025)
.ENDS
***** MICROSIM PSPICE(tm) SIMULATORS *****************************************
**************************  INSTANTIATION   **********************************
.subckt mtd2955eP 10 20 30 
*
* 10 = Drain 20 = Gate 30 = Source
*
******************************************************************************
*
*------------------------ EXTERNAL PARASITICS --------------------------------
* PACKAGE INDUCTANCE
*
LDRAIN  10  11  4.5e-09
LGATE   20  21  7.5e-09
LSOURCE 30  31  7.5e-09
*
* RESISTANCES
*
RDRAIN1    4  11 RDRAIN 0.1045
RDRAIN2    4   5 RDRAIN 0.01
RSOURCE   31   6 RSOURCE 0.095  
RDBODY     8  30 RDBODY  0.1269
*
RGATE      21   2 5
*
*--------------------------------------------------------------------------
*
*--------------- CAPACITANCES AND BODY DIODE ------------------------------
*
DBODY       11  8 DBODY
DGD         11  3 DGD
CGDMAX      2   3 3.3e-09
RGDMAX      2   3 1e+08
CGS         2   6 5.38e-10 
*
*--------------------------------------------------------------------------
*
*----------------------- CORE MOSFET --------------------------------------
*
M1       5  2  6  6  MAIN
*
*--------------------------------------------------------------------------
*
.MODEL RDRAIN RES  (
+TC1    = 0.00921634
+TC2    = 1.12425e-05)
*
.MODEL RSOURCE RES  (
+TC1    = -0.000556269
+TC2    = 1.04366e-06)
*
.MODEL RDBODY RES  (
+TC1    = -0.00884122
+TC2    = 3.75025e-05)
*
*
.MODEL MAIN PMOS  ( 
+LEVEL   = 3
+VTO     = -3.72
+KP      = 6.3
+GAMMA   = 1.5
+PHI     = 0.6
+LAMBDA  = 0
+RD      = 0
+RS      = 0
+CBD     = 0
+CBS     = 0
+IS      = 1e-14
+PB      = 0.8
+CGSO    = 0
+CGDO    = 0
+CGBO    = 0
+RSH     = 0
+CJ      = 0
+MJ      = 0.5
+CJSW    = 0
+MJSW    = 0.33
+JS      = 1e-14
+TOX     = 1e-07
+NSUB    = 1e+15
+NSS     = 0
+NFS     = 6.326e+11
+TPG     = 1
+XJ      = 0
+LD      = 0
+UO      = 600
+UCRIT   = 1000
+UEXP    = 0
+UTRA    = 0
+VMAX    = 0
+NEFF    = 1
+KF      = 0
+AF      = 1
+FC      = 0.5
+DELTA   = 0
+THETA   = 0
+ETA     = 0
+KAPPA   = 0.2)
*
*--------------------------------------------------------------------------
*
.MODEL DGD D  ( 
+IS      = 1e-15
+RS      = 0
+N       = 1000
+TT      = 0
+CJO     = 2.75581e-10
+VJ      = 1.45842
+M       = 0.657579
+EG      = 1.11
+XTI     = 3
+KF      = 0
+AF      = 1
+FC      = 0.5
+BV      = 10000
+IBV     = 0.001)
*
*--------------------------------------------------------------------------
*
.MODEL DBODY D  ( 
+IS      = 1.12093e-12
+RS      = 0
+N       = 1.05243
+TT      = 1.2e-07
+CJO     = 8.78927e-10
+VJ      = 0.821526
+M       = 0.421618
+EG      = 1.11
+XTI     = 4
+KF      = 0
+AF      = 1
+FC      = 0.5
+BV      = 74.2776
+IBV     = 0.00025)
.ENDS


***************************************************
*          TMOS.LIB VERSION 2.0    Thursday, 21 December 1989
***************************************************
*
*     MOTOROLA/LAAS LIBRARY FOR MOTOROLA POWER MOSFET
*                      (TMOS) SPICE  MODEL
*
*           USING SWITCHES FOR THE CGD CAPACITOR
*
*       DEVELOPED BY LAAS / MOTOROLA TOULOUSE 1989
*
*         COPYING THIS LIBRARY IS WELCOMED AND ENCOURAGED,
*                      BUT IT IS NOT FOR COMMERCIAL USE
*
***************************************************
*Motorola reserves the right to make changes without further
*notice to any products herein to improve reliability, function or
*design.  Motorola does not assume any liability arising out of the
*application or use of any product or circuit described herein;
*neither does it convey any license under its patent rights nor the
*rights of others.  Motorola products are not authorized for use as
*components in life support devices or systems intended for
*surgical implant into the body or intended to support or sustain
*life.  Buyer agrees to notify Motorola of any such intended end
*use whereupon Motorola shall determine availability and suitability
*or its product or products for the use intended.  Motorola is a
*registered trademark of Motorola, Inc.  Motorola, Inc. is an Equal
*Employment Opportunity/Affirmative Action Employer.
***************************************************
*
*-------------------------------------------------------------
*
*MTP12P10 model created using LAAS version
*
*            TMOS MODEL WITH SWITCHES  (SUBCIRCUIT)
*
.SUBCKT MTP12P10 10 20 30
RG 10 1 20
M1 2 1 3 3 DMOS L=1U W=1U
.MODEL DMOS PMOS (VTO=-3.58 KP=2 THETA=0.058 VMAX=5E6 LEVEL=3)
CGS 1 3 575P
RD 20 4 0.17
DDS 4 3 DDS
.MODEL DDS D(BV=100 M=0.37 CJO=949P VJ=0.609)
DBODY 20 3 DBODY
.MODEL DBODY D(IS=1.6E-12 N=1.08 RS=0.068 TT=0.10U)
RA 4 2 1E-3
RS 3 5 1M
LS 5 30 5N
M2 1 8 6 6 INTER
E2 8 6 4 1 2
.MODEL INTER PMOS (VTO=0 KP=10 LEVEL=1)
CGDMAX 7 4 1450P
RCGD 7 4 1E7
DGD 4 6 DGD
RDGD 4 6 1E7
.MODEL DGD D(M=0.39 CJO=1450P VJ=0.03)
M3 7 9 1 1 INTER
E3 9 1 4 1 -2
.ENDS
*
*               END OF SUBCIRCUIT
*-------------------------------------------------------------
*
*MTP2P50 model created using LAAS version
*
*            TMOS MODEL WITH SWITCHES  (SUBCIRCUIT)
*
.SUBCKT MTP2P50 10 20 30
RG 10 1 20
M1 2 1 3 3 DMOS L=1U W=1U
.MODEL DMOS PMOS (VTO=-3.95 KP=0.421 THETA=0.058 VMAX=5E6 LEVEL=3)
CGS 1 3 520P
RD 20 4 6.883
DDS 4 3 DDS
.MODEL DDS D(BV=500 M=0.45 CJO=400P VJ=0.037)
DBODY 20 3 DBODY
.MODEL DBODY D(IS=5E-11 N=1.12 RS=0.143 TT=1U)
RA 4 2 1E-3
RS 3 5 1M
LS 5 30 5N
M2 1 8 6 6 INTER
E2 8 6 4 1 2
.MODEL INTER PMOS (VTO=0 KP=10 LEVEL=1)
CGDMAX 7 4 1730P
RCGD 7 4 1E7
DGD 4 6 DGD
RDGD 4 6 1E7
.MODEL DGD D(M=0.418 CJO=1730P VJ=2.2E-3)
M3 7 9 1 1 INTER
E3 9 1 4 1 -2
.ENDS
*
*               END OF SUBCIRCUIT
* -----------------------------------------------------
*MTD4P06 model created using LAAS version.
*
*           TMOS MODEL WITH SWITCHES (SUBCIRCUIT)
*
.SUBCKT MTD4P06 10 20 30
RG 10 1 1
M1 2 1 3 3 DMOS L=1U W=1U
.MODEL DMOS PMOS (VTO=-4 KP=1.52 THETA=0.04 VMAX=3.5E5 LEVEL=3)
CGS 1 3 650P
RD 20 4 0.32
DDS 4 3 DDS
.MODEL DDS D(BV=60 M=0.4 CJO=685.5P VJ=0.657)
DBODY 20 3 DBODY
.MODEL DBODY D(IS=6.4E-13 N=1.03 RS=0.167 TT=190N)
RA 4 2 1E-3
RS 3 5 1M
LS 5 30 6N
M2 1 8 6 6 INTER
E2 8 6 4 1 2
.MODEL INTER PMOS (VTO=0 KP=10 LEVEL=1)
CGDMAX 7 4 750P
RCGD 7 4 1E7
DGD 4 6 DGD
RDGD 4 6 1E7
.MODEL DGD D(M=0.44 CJO=750P VJ=0.11)
M3 7 9 1 1 INTER
E3 9 1 4 1 -2
.ENDS
*
*             END OF SUBCIRCUIT
* -------------------------------------------------------
*MTD2955 model created using LAAS version.
*
*           TMOS MODEL WITH SWITCHES (SUBCIRCUIT)
*
.SUBCKT MTD2955 10 20 30
RG 10 1 1
M1 2 1 3 3 DMOS L=1U W=1U
.MODEL DMOS PMOS (VTO=-2.95 KP=2.45 THETA=0.04 VMAX=4E5 LEVEL=3)
CGS 1 3 600P
RD 20 4 0.175
DDS 4 3 DDS
.MODEL DDS D(BV=60 M=0.43 CJO=740P VJ=0.826)
DBODY 20 3 DBODY
.MODEL DBODY D(IS=5.6E-13 N=1.04 RS=0.16 TT=400N)
RA 4 2 1E-3
RS 3 5 1M
LS 5 30 5N
M2 1 8 6 6 INTER
E2 8 6 4 1 2
.MODEL INTER PMOS (VTO=0 KP=10 LEVEL=1)
CGDMAX 7 4 2300P
RCGD 7 4 1E7
DGD 4 6 DGD
RDGD 4 6 1E7
.MODEL DGD D(M=0.43 CJO=2300P VJ=0.028)
M3 7 9 1 1 INTER
E3 9 1 4 1 -2
.ENDS
*
*             END OF SUBCIRCUIT
* -----------------------------------------------------
*MTP20P06 model created using LAAS version.
*
*           TMOS MODEL WITH SWITCHES (SUBCIRCUIT)
*
.SUBCKT MTP20P06 10 20 30
RG 10 1 1
M1 2 1 3 3 DMOS L=1U W=1U
.MODEL DMOS PMOS (VTO=-3.97 KP=3.23 THETA=0.04 VMAX=3E5 LEVEL=3)
CGS 1 3 1400P
RD 20 4 0.09
DDS 4 3 DDS
.MODEL DDS D(BV=60 M=0.43 CJO=1614P VJ=0.792)
DBODY 20 3 DBODY
.MODEL DBODY D(IS=1.3E-12 N=1.02 RS=0.068 TT=520N)
RA 4 2 1E-3
RS 3 5 1M
LS 5 30 5N
M2 1 8 6 6 INTER
E2 8 6 4 1 2
.MODEL INTER PMOS (VTO=0 KP=10 LEVEL=1)
CGDMAX 7 4 2450P
RCGD 7 4 1E7
DGD 4 6 DGD
RDGD 4 6 1E7
.MODEL DGD D(M=0.44 CJO=2450P VJ=0.105)
M3 7 9 1 1 INTER
E3 9 1 4 1 -2
.ENDS
*
*             END OF SUBCIRCUIT
* ---------------------------------------------------
*MTP8P10 model created using LAAS version.
*
*           TMOS MODEL WITH SWITCHES (SUBCIRCUIT)
*
.SUBCKT MTP8P10 10 20 30
RG 10 1 1
M1 2 1 3 3 DMOS L=1U W=1U
.MODEL DMOS PMOS (VTO=-3.87 KP=2.04 THETA=0.04 VMAX=3.5E5 LEVEL=3)
CGS 1 3 750P
RD 20 4 0.19
DDS 4 3 DDS
.MODEL DDS D(BV=100 M=0.4 CJO=974P VJ=0.583)
DBODY 20 3 DBODY
.MODEL DBODY D(IS=6E-13 N=1.02 RS=0.31 TT=640N)
RA 4 2 1E-3
RS 3 5 1M
LS 5 30 6N
M2 1 8 6 6 INTER
E2 8 6 4 1 2
.MODEL INTER PMOS (VTO=0 KP=10 LEVEL=1)
CGDMAX 7 4 1700P
RCGD 7 4 1E7
DGD 4 6 DGD
RDGD 4 6 1E7
.MODEL DGD D(M=0.47 CJO=1700P VJ=0.074)
M3 7 9 1 1 INTER
E3 9 1 4 1 -2
.ENDS
*
*             END OF SUBCIRCUIT
* ---------------------------------------------------------